CSD19531KCS

CSD19531KCS
Mfr. #:
CSD19531KCS
Descripción:
MOSFET 100V 6.4mOhm Pwr MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CSD19531KCS Ficha de datos
Entrega:
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ECAD Model:
Más información:
CSD19531KCS más información CSD19531KCS Product Details
Atributo del producto
Valor de atributo
Fabricante:
Instrumentos Texas
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
200 A
Rds On - Resistencia de la fuente de drenaje:
7.7 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.7 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
38 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
179 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
NexFET
Embalaje:
Tubo
Altura:
16.51 mm
Longitud:
10.67 mm
Serie:
CSD19531KCS
Tipo de transistor:
1 N-Channel
Ancho:
4.7 mm
Marca:
Instrumentos Texas
Otoño:
4.1 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7.2 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
16 ns
Tiempo típico de retardo de encendido:
8.4 ns
Unidad de peso:
0.211644 oz
Tags
CSD19531, CSD1953, CSD19, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
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MOSFET, N CHANNEL, 100V, 100A, TO-220-3; Polarité transistor: Canal N; Courant de drain Id: 100A; Tension Vds max..: 100V; Résistance Rds(on): 0.0064ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 2.7V; Dissipation de pui
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MOSFET, N-CH, 100V, 80A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V;
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***ment14 APAC
MOSFET, N CH, 80A, 80V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:150W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Current Id Max:80A; Operating Temperature Range:-55°C to +175°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 80 / ON Resistance (Rds(on)) mOhm = 5.4 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 38 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 150
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
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***ineon
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***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***icroelectronics
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***XS
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NexFET N-Channel Power MOSFETs
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NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Parte # Descripción Valores Precio
CSD19531KCS
DISTI # V99:2348_07248852
Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
131
  • 100:$1.1395
  • 10:$1.3700
  • 1:$1.5699
CSD19531KCS
DISTI # 296-37480-5-ND
MOSFET N-CH 100V 100A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
1344In Stock
  • 5000:$0.9023
  • 2500:$0.9370
  • 1000:$1.0065
  • 500:$1.2147
  • 100:$1.5617
  • 50:$1.7352
  • 10:$1.9430
  • 1:$2.1500
CSD19531KCS
DISTI # 25862361
Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
131
  • 100:$1.1395
  • 10:$1.3700
  • 8:$1.5699
CSD19531KCS
DISTI # 30217639
Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
40
  • 100:$1.2192
  • 40:$1.5168
CSD19531KCSÁÁ
DISTI # CSD19531KCS
Trans MOSFET N-CH 100V 105A 3-Pin TO-220 Tube (Alt: CSD19531KCS)
RoHS: Compliant
Min Qty: 550
Container: Tube
Asia - 0
    CSD19531KCSÁÁ
    DISTI # CSD19531KCS
    Trans MOSFET N-CH 100V 105A 3-Pin TO-220 Tube - Rail/Tube (Alt: CSD19531KCS)
    RoHS: Compliant
    Min Qty: 400
    Container: Tube
    Americas - 0
    • 400:$0.9149
    • 500:$0.8709
    • 900:$0.8419
    • 2000:$0.8139
    • 4000:$0.7909
    CSD19531KCS
    DISTI # 11X3114
    MOSFET, N CHANNEL, 100V, 100A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0064ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,MSL:-RoHS Compliant: Yes468
    • 1:$1.8600
    • 10:$1.5800
    • 100:$1.2700
    CSD19531KCS
    DISTI # 71AC2912
    MOSFET, N CHANNEL, 100V, 100A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0064ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,PowerRoHS Compliant: Yes41
    • 1:$1.8600
    • 10:$1.5800
    • 100:$1.2700
    CSD19531KCS100V, 6.4mOhm, TO-220 NexFET&#153,Power MOSFET4677
    • 1000:$0.7200
    • 750:$0.7800
    • 500:$0.9500
    • 250:$1.1400
    • 100:$1.2300
    • 25:$1.4100
    • 10:$1.5200
    • 1:$1.7000
    CSD19531KCSPower Field-Effect Transistor, 100A I(D), 100V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
    RoHS: Compliant
    70193
    • 1000:$0.8300
    • 500:$0.8700
    • 100:$0.9100
    • 25:$0.9500
    • 1:$1.0200
    CSD19531KCS
    DISTI # 595-CSD19531KCS
    MOSFET 100V 6.4mOhm Pwr MOSFET
    RoHS: Compliant
    573
    • 1:$1.8600
    • 10:$1.5800
    • 100:$1.2700
    CSD19531KCS
    DISTI # 8274912P
    MOSFET N-CHANNEL 100V 105A NEXFET TO-220, TU100
    • 50:£1.1520
    • 100:£0.9240
    • 250:£0.8640
    • 500:£0.8060
    CSD19531KCS
    DISTI # 8274912
    MOSFET N-CHANNEL 100V 105A NEXFET TO-220, PK85
    • 5:£1.4580
    • 50:£1.1520
    • 100:£0.9240
    • 250:£0.8640
    • 500:£0.8060
    CSD19531KCS
    DISTI # 2419495
    MOSFET, N CHANNEL, 100V, 100A, TO-220-3
    RoHS: Compliant
    509
    • 1:£1.6100
    • 10:£1.2500
    • 100:£0.9700
    • 250:£0.9600
    • 500:£0.9500
    CSD19531KCS
    DISTI # C1S746203275260
    Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube
    RoHS: Compliant
    131
    • 100:$1.1395
    • 10:$1.3700
    CSD19531KCS
    DISTI # 2419495
    MOSFET, N CHANNEL, 100V, 100A, TO-220-3
    RoHS: Compliant
    559
    • 1:$2.8500
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    OMO.#: OMO-SM74104MA-NOPB

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    Mfr.#: UCC28061DR

    OMO.#: OMO-UCC28061DR

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    Mfr.#: ISO721D

    OMO.#: OMO-ISO721D

    Digital Isolators 3.3V/5V High-Speed Digital
    SN65HVD3088ED

    Mfr.#: SN65HVD3088ED

    OMO.#: OMO-SN65HVD3088ED

    RS-485 Interface IC Low-power Half-dplx Transceiver
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    Mfr.#: STTH108A

    OMO.#: OMO-STTH108A

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    OMO.#: OMO-TL431BIDBZR

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    OMO.#: OMO-STPSC2H12D

    Schottky Diodes & Rectifiers 1200 V power Schottky silicon carbide diode
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    Mfr.#: UCC24612-2DBVR

    OMO.#: OMO-UCC24612-2DBVR

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    MOSFET 40V, N ch NexFET MOSFETG , single TO-220, 2.6mOhm 3-TO-220 -55 to 175
    Disponibilidad
    Valores:
    398
    En orden:
    2381
    Ingrese la cantidad:
    El precio actual de CSD19531KCS es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,86 US$
    1,86 US$
    10
    1,58 US$
    15,80 US$
    100
    1,26 US$
    126,00 US$
    500
    1,10 US$
    550,00 US$
    1000
    0,92 US$
    915,00 US$
    2500
    0,85 US$
    2 130,00 US$
    5000
    0,82 US$
    4 105,00 US$
    10000
    0,79 US$
    7 890,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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