SI4346DY-T1-E3

SI4346DY-T1-E3
Mfr. #:
SI4346DY-T1-E3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 30V 5.9A 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4346DY-T1-E3 Ficha de datos
Entrega:
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HTML Datasheet:
SI4346DY-T1-E3 DatasheetSI4346DY-T1-E3 Datasheet (P4-P6)SI4346DY-T1-E3 Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI4346DY-E3
Unidad de peso
0.006596 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
8-SO
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
1.31W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
-
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
5.9A (Ta)
Rds-On-Max-Id-Vgs
23 mOhm @ 8A, 10V
Vgs-th-Max-Id
2V @ 250μA
Puerta-Carga-Qg-Vgs
10nC @ 4.5V
Disipación de potencia Pd
1.31 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
11 ns
Hora de levantarse
11 ns
Vgs-Puerta-Fuente-Voltaje
12 V
Id-corriente-de-drenaje-continua
5.9 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
23 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
40 ns
Tiempo de retardo de encendido típico
9 ns
Modo de canal
Mejora
Tags
SI4346D, SI4346, SI434, SI43, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.023 Ohms Surface Mount Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET,N CH,30V,5.9A,8-SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:5.9A; Power Dissipation Pd:1.31W; Voltage Vgs Max:12V
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.9A; On Resistance Rds(On):0.019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:-Rohs Compliant: No
Parte # Mfg. Descripción Valores Precio
SI4346DY-T1-E3
DISTI # V72:2272_09216464
Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R
RoHS: Compliant
1125
  • 75000:$0.3116
  • 30000:$0.3146
  • 15000:$0.3175
  • 6000:$0.3205
  • 3000:$0.3234
  • 1000:$0.3264
  • 500:$0.3585
  • 250:$0.3923
  • 100:$0.4267
  • 50:$0.4351
  • 25:$0.4834
  • 10:$0.4928
  • 1:$0.5231
SI4346DY-T1-E3
DISTI # SI4346DY-T1-E3CT-ND
Vishay SiliconixMOSFET N-CH 30V 5.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1591In Stock
  • 1000:$0.3577
  • 500:$0.4423
  • 100:$0.5903
  • 10:$0.7590
  • 1:$0.8700
SI4346DY-T1-E3
DISTI # SI4346DY-T1-E3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 5.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1591In Stock
  • 1000:$0.3577
  • 500:$0.4423
  • 100:$0.5903
  • 10:$0.7590
  • 1:$0.8700
SI4346DY-T1-E3
DISTI # SI4346DY-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 30V 5.9A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4346DY-T1-E3
    DISTI # 25790090
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R
    RoHS: Compliant
    1125
    • 15000:$0.3413
    • 6000:$0.3445
    • 3000:$0.3477
    • 1000:$0.3509
    • 500:$0.3854
    • 250:$0.4217
    • 100:$0.4587
    • 50:$0.4677
    • 25:$0.5197
    • 19:$0.5298
    SI4346DY-T1-E3
    DISTI # 19257946
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R
    RoHS: Compliant
    995
    • 167:$0.3750
    SI4346DY-T1-E3
    DISTI # 57J5650
    Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 8A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:2V,No. of Pins:8Pins RoHS Compliant: Yes995
    • 1:$0.3000
    • 10:$0.3000
    • 25:$0.3000
    • 50:$0.3000
    • 100:$0.3000
    • 250:$0.3000
    • 500:$0.3000
    SI4346DY-T1-E3.
    DISTI # 30AC0153
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:5.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.31W,No. of Pins:8Pins RoHS Compliant: No0
      SI4346DY-T1-E3
      DISTI # 70026210
      Vishay SiliconixN-CHANNEL 30-V (D-S) MOSFET
      RoHS: Compliant
      0
      • 2500:$0.4400
      • 5000:$0.4200
      • 7500:$0.3900
      SI4346DY-T1-E3
      DISTI # 781-SI4346DY-T1-E3
      Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
      RoHS: Compliant
      0
        SI4346DY-T1-E3Vishay SiliconixMOSFET Transistor, N-Channel, SO20
        • 1:$1.7500
        SI4346DY-T1-E3--- 7
          SI4346DY-T1-E3Vishay Intertechnologies 6969
            SI4346DYT1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 5.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
            RoHS: Compliant
            Europe - 2500
              SI4346DY-T1-E3  281
                SI4346DY-T1-E3
                DISTI # 1839003
                Vishay IntertechnologiesMOSFET,N CH,30V,5.9A,8-SOIC
                RoHS: Compliant
                995
                • 1000:£0.3290
                • 500:£0.3360
                • 100:£0.3430
                • 50:£0.4530
                • 5:£0.5100
                Imagen Parte # Descripción
                SI4346DY-T1-GE3

                Mfr.#: SI4346DY-T1-GE3

                OMO.#: OMO-SI4346DY-T1-GE3

                MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
                SI4346DY-T1-GE3

                Mfr.#: SI4346DY-T1-GE3

                OMO.#: OMO-SI4346DY-T1-GE3-VISHAY

                RF Bipolar Transistors MOSFET 30V 8.0A 2.5W 23mohm @ 10V
                SI4346DY-T1

                Mfr.#: SI4346DY-T1

                OMO.#: OMO-SI4346DY-T1-1190

                Nuevo y original
                SI4346DY-T1-E3

                Mfr.#: SI4346DY-T1-E3

                OMO.#: OMO-SI4346DY-T1-E3-VISHAY

                MOSFET N-CH 30V 5.9A 8-SOIC
                Disponibilidad
                Valores:
                Available
                En orden:
                2500
                Ingrese la cantidad:
                El precio actual de SI4346DY-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
                Precio de referencia (USD)
                Cantidad
                Precio unitario
                Ext. Precio
                1
                0,45 US$
                0,45 US$
                10
                0,43 US$
                4,28 US$
                100
                0,40 US$
                40,50 US$
                500
                0,38 US$
                191,25 US$
                1000
                0,36 US$
                360,00 US$
                Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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