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IXFH12N90P

IXFH12N90P
Mfr. #:
IXFH12N90P
Fabricante:
Littelfuse
Descripción:
Darlington Transistors MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFH12N90P Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IXFH12N90P más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IXFH12N90
embalaje
Tubo
Unidad de peso
0.229281 oz
Estilo de montaje
A través del orificio
Nombre comercial
HyperFET
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
380 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
68 ns
Hora de levantarse
34 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
12 A
Vds-Drain-Source-Breakdown-Voltage
900 V
Vgs-th-Gate-Source-Threshold-Voltage
3.5 V to 6.5 V
Resistencia a la fuente de desagüe de Rds
900 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
50 ns
Tiempo de retardo de encendido típico
32 ns
Qg-Gate-Charge
56 nC
Transconductancia directa-Mín.
8.2 S
Modo de canal
Mejora
Tags
IXFH12N, IXFH12, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
MOSFET,N CH,900V,12A,TO-247
***nell
MOSFET,N CH,900V,12A,TO-247; Transistor Polarity:N Channel; Current Id Max:12A; Drain Source Voltage Vds:900V; On State Resistance:900mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:30V; Power Dissipation:380W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descripción Valores Precio
IXFH12N90P
DISTI # IXFH12N90P-ND		IXYS CorporationMOSFET N-CH 900V 12A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$6.1560
IXFH12N90P
DISTI # 83R9967		IXYS CorporationN CHANNEL POLAR POWER MOSFET, HiPerFET, 900V, 12A, TO247,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:900V,On Resistance Rds(on):0.9ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:3Pins RoHS Compliant: Yes30
  • 1:$8.7800
  • 10:$7.8500
  • 25:$6.8300
  • 50:$6.6900
  • 100:$6.4400
  • 250:$5.5000
  • 500:$5.2100
IXFH12N90P
DISTI # 747-IXFH12N90P		IXYS CorporationMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
RoHS: Compliant		55
  • 1:$8.7800
  • 10:$7.8500
  • 25:$6.8300
  • 50:$6.6900
  • 100:$6.4400
  • 250:$5.5000
  • 500:$5.2100
  • 1000:$4.4000
IXFH12N90P
DISTI # 1829759		IXYS CorporationMOSFET,N CH,900V,12A,TO-247
RoHS: Compliant		30
  • 1:£7.5500
  • 5:£6.9700
  • 10:£5.0100
IXFH12N90P
DISTI # 1829759		IXYS CorporationMOSFET,N CH,900V,12A,TO-247
RoHS: Compliant		30
  • 1:$13.9000
  • 10:$12.4300
  • 25:$10.8100
  • 50:$10.5900
  • 100:$10.2000
  • 250:$8.7100
  • 500:$8.2500
  • 1000:$6.9700
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Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de IXFH12N90P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,60 US$
6,60 US$
10
6,27 US$
62,70 US$
100
5,94 US$
594,00 US$
500
5,61 US$
2 805,00 US$
1000
5,28 US$
5 280,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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