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SIHD4N80E-GE3

SIHD4N80E-GE3
Mfr. #:
SIHD4N80E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 800V Vds 30V Vgs DPAK (TO-252)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHD4N80E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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HTML Datasheet:
SIHD4N80E-GE3 DatasheetSIHD4N80E-GE3 Datasheet (P4-P6)SIHD4N80E-GE3 Datasheet (P7)
ECAD Model:
Más información:
SIHD4N80E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
4.3 A
Rds On - Resistencia de la fuente de drenaje:
1.1 Ohms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
16 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
69 W
Configuración:
Único
Modo de canal:
Mejora
Serie:
E
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
1.5 S
Otoño:
20 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7 ns
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
26 ns
Tiempo típico de retardo de encendido:
12 ns
Tags
SIHD, SIH
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 800V 4.3A 3-Pin TO-252
***nell
MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W.
***ark
Mosfet, N-Ch, 800V, 4.3A, 150Deg C, 69W; Transistor Polarity:n Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:800V; On Resistance Rds(On):1.1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHD4N80E-GE3
DISTI # SIHD4N80E-GE3-ND		Vishay SiliconixMOSFET N-CHAN 800V FP TO-252
RoHS: Compliant
Min Qty: 1
Container: Bulk		2870In Stock
  • 5000:$0.7781
  • 2500:$0.8080
  • 1000:$0.8678
  • 500:$1.0474
  • 100:$1.2748
  • 10:$1.5860
  • 1:$1.7700
SIHD4N80E-GE3
DISTI # SIHD4N80E-GE3		Vishay IntertechnologiesE Series Power MOSFET Single N-Channel 800V VDS ±30V 4.3A ID Thin Lead 3-Pin DPAK - Tape and Reel (Alt: SIHD4N80E-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.7269
  • 18000:$0.7479
  • 12000:$0.7689
  • 6000:$0.8009
  • 3000:$0.8259
SIHD4N80E-GE3
DISTI # 78AC6519		Vishay IntertechnologiesMOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes2990
  • 1000:$0.8310
  • 500:$1.0000
  • 100:$1.1400
  • 50:$1.2500
  • 25:$1.3600
  • 10:$1.4700
  • 1:$1.7800
SIHD4N80E-GE3
DISTI # 78-SIHD4N80E-GE3		Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		2842
  • 1:$1.7600
  • 10:$1.4600
  • 100:$1.1300
  • 500:$0.9930
  • 1000:$0.8230
SIHD4N80E-GE3
DISTI # 2932924		Vishay IntertechnologiesMOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W2990
  • 500:£0.7190
  • 250:£0.7690
  • 100:£0.8190
  • 10:£1.1000
  • 1:£1.4500
SIHD4N80E-GE3
DISTI # 2932924		Vishay IntertechnologiesMOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W
RoHS: Compliant		2990
  • 1000:$1.2800
  • 500:$1.3500
  • 250:$1.6000
  • 100:$1.9400
  • 10:$2.4700
  • 1:$2.9900
SIHD4N80E-GE3Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		Americas -
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    Disponibilidad
    Valores:
    Available
    En orden:
    1985
    Ingrese la cantidad:
    El precio actual de SIHD4N80E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,76 US$
    1,76 US$
    10
    1,46 US$
    14,60 US$
    100
    1,13 US$
    113,00 US$
    500
    0,99 US$
    496,50 US$
    1000
    0,82 US$
    823,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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