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IPC028N03L3X1SA1

IPC028N03L3X1SA1
Mfr. #:
IPC028N03L3X1SA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 30V 2A SAWN ON FOIL
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPC028N03L3X1SA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
IPC02, IPC0, IPC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V DIE Wafer
***i-Key
MOSFET N-CH 30V 2A SAWN ON FOIL
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs. OptiMOS 30V products are tailored to the needs of power management in notebook by improved EMI behavior as increased battery life. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance due to lowest figure of merits R on x Q g and R on x Q gd; Low gate resistance; Excellent 5V gate drive performance; Optimized EMI behavior based on an integrated damping network; Super barrier diode may improved efficiency by upwards of 2%. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Highest efficiency; Smallest footprint and highest power density with S3O8 & CanPAK; Easy to design-in; Can be driven from 5V system rail giving excellent performance | Target Applications: On board power for server; Power management for mobile computing; Synchronous rectification; High power density point of load converters
Parte # Mfg. Descripción Valores Precio
IPC028N03L3X1SA1
DISTI # V36:1790_06391804		Infineon Technologies AGTrans MOSFET N-CH 30V Wafer
RoHS: Compliant		0
    IPC028N03L3X1SA1
    DISTI # IPC028N03L3X1SA1-ND    		Infineon Technologies AGMOSFET N-CH 30V 2A SAWN ON FOIL
    RoHS: Compliant
    Min Qty: 50485
    Container: Bulk    		Temporarily Out of Stock
    • 50485:$0.2870
    IPC028N03L3X1SA1
    DISTI # IPC028N03L3X1SA1    		Infineon Technologies AGTrans MOSFET N-CH 30V DIE Wafer - Tape and Reel (Alt: IPC028N03L3X1SA1)
    RoHS: Compliant
    Min Qty: 50485
    Container: Reel    		Americas - 0
    • 50485:$0.2949
    • 100970:$0.2839
    • 201940:$0.2739
    • 302910:$0.2649
    • 504850:$0.2599
    Imagen Parte # Descripción
    IPC028N03L3X1SA1

    Mfr.#: IPC028N03L3X1SA1

    OMO.#: OMO-IPC028N03L3X1SA1

    		 MOSFET LV POWER MOS
    IPC028N03L3X1SA1

    Mfr.#: IPC028N03L3X1SA1

    OMO.#: OMO-IPC028N03L3X1SA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 2A SAWN ON FOIL
    Disponibilidad
    Valores:
    Available
    En orden:
    4000
    Ingrese la cantidad:
    El precio actual de IPC028N03L3X1SA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,39 US$
    0,39 US$
    10
    0,37 US$
    3,70 US$
    100
    0,35 US$
    35,09 US$
    500
    0,33 US$
    165,70 US$
    1000
    0,31 US$
    311,90 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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