FS100R12PT4

FS100R12PT4
Mfr. #:
FS100R12PT4
Fabricante:
Infineon Technologies
Descripción:
IGBT Modules 3 PHASE POWER BRIDGE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FS100R12PT4 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
IGBT: módulos
Producto
Módulos de silicio IGBT
embalaje
A granel
Estilo de montaje
Tornillo
Disipación de potencia Pd
500 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 40 C
Colector-Emisor-Voltaje-VCEO-Max
1200 V
Colector-Emisor-Saturación-Voltaje
2.15 V
Corriente-de-colector-continuo-a-25-C
135 A
Puerta-Emisor-Fuga-Corriente
100 nA
Voltaje máximo del emisor de puerta
+/- 20 V
Tags
FS100R12P, FS100R12, FS100R1, FS100R, FS100, FS10, FS1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Module N-CH 1.2KV 135A 19-Pin
***ment14 APAC
IGBT, POW, QUAD W NTC, 1200V, 100A; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:20; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:500W
***ineon
EconoPACK 4 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups
Parte # Mfg. Descripción Valores Precio
FS100R12PT4BOSA1
DISTI # FS100R12PT4BOSA1-ND
Infineon Technologies AGIGBT MODULE VCES 600V 100A
RoHS: Not compliant
Min Qty: 6
Container: Bulk
Temporarily Out of Stock
  • 6:$142.1867
FS100R12PT4
DISTI # SP000485594
Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 135A 19-Pin (Alt: SP000485594)
RoHS: Compliant
Min Qty: 1
Europe - 3
  • 1:€170.5900
  • 10:€137.8900
  • 25:€125.2900
  • 50:€121.0900
  • 100:€117.0900
  • 500:€113.6900
  • 1000:€111.0900
FS100R12PT4BOSA1
DISTI # FS100R12PT4BOSA1
Infineon Technologies AGMEDIUM POWER ECONO - Trays (Alt: FS100R12PT4BOSA1)
RoHS: Compliant
Min Qty: 6
Container: Tray
Americas - 18
  • 6:$128.9900
  • 12:$125.4900
  • 24:$122.2900
  • 36:$119.1900
  • 60:$116.1900
FS100R12PT4
DISTI # SP000485594
Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 135A 19-Pin (Alt: SP000485594)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€145.4900
  • 10:€133.3900
  • 25:€127.9900
  • 50:€123.0900
  • 100:€118.5900
  • 500:€114.2900
  • 1000:€106.6900
FS100R12PT4
DISTI # 84R7213
Infineon Technologies AGIGBT Module,Transistor Polarity:N Channel,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:20Pins,Product Range:- RoHS Compliant: Yes0
    FS100R12PT4Infineon Technologies AGInsulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant
    1611
    • 1000:$113.7000
    • 500:$119.6800
    • 100:$124.6000
    • 25:$129.9400
    • 1:$139.9400
    FS100R12PT4BOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant
    1
    • 1000:$113.7000
    • 500:$119.6800
    • 100:$124.6000
    • 25:$129.9400
    • 1:$139.9400
    FS100R12PT4
    DISTI # 726-FS100R12PT4
    Infineon Technologies AGIGBT Modules 3 PHASE POWER BRIDGE
    RoHS: Compliant
    4
    • 1:$144.1100
    • 5:$141.2800
    • 10:$134.6900
    • 25:$131.8700
    Imagen Parte # Descripción
    FS100R12KT3

    Mfr.#: FS100R12KT3

    OMO.#: OMO-FS100R12KT3

    IGBT Modules N-CH 1.2KV 140A
    FS100R06KE3

    Mfr.#: FS100R06KE3

    OMO.#: OMO-FS100R06KE3

    IGBT Modules ECONO PACK 3 WITH FAST TRENCH
    FS1006

    Mfr.#: FS1006

    OMO.#: OMO-FS1006-1190

    Nuevo y original
    FS100R12KE3_B3

    Mfr.#: FS100R12KE3_B3

    OMO.#: OMO-FS100R12KE3-B3-INFINEON-TECHNOLOGIES

    IGBT FS100R12KE3B3NOSA1
    FS100VSJ-03F-T11X5

    Mfr.#: FS100VSJ-03F-T11X5

    OMO.#: OMO-FS100VSJ-03F-T11X5-1190

    Nuevo y original
    FS100R07N2E4

    Mfr.#: FS100R07N2E4

    OMO.#: OMO-FS100R07N2E4-125

    IGBT Modules IGBT Module 100A 650V
    FS100R12KT4GB11BOSA1

    Mfr.#: FS100R12KT4GB11BOSA1

    OMO.#: OMO-FS100R12KT4GB11BOSA1-INFINEON-TECHNOLOGIES

    Trench and Field Stop IGBT4un
    FS100R12KT4GPBPSA1

    Mfr.#: FS100R12KT4GPBPSA1

    OMO.#: OMO-FS100R12KT4GPBPSA1-INFINEON-TECHNOLOGIES

    MOD IGBT LOW PWR ECONO3-4
    FS100R12KT4PBPSA1

    Mfr.#: FS100R12KT4PBPSA1

    OMO.#: OMO-FS100R12KT4PBPSA1-INFINEON-TECHNOLOGIES

    MOD IGBT LOW PWR ECONO2-6
    FS100R12KE3BOSA1416

    Mfr.#: FS100R12KE3BOSA1416

    OMO.#: OMO-FS100R12KE3BOSA1416-1190

    Infineon IGBT Module FS100R12KE3 - ECONO3-4-1
    Disponibilidad
    Valores:
    Available
    En orden:
    1000
    Ingrese la cantidad:
    El precio actual de FS100R12PT4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    166,18 US$
    166,18 US$
    10
    157,88 US$
    1 578,76 US$
    100
    149,57 US$
    14 956,65 US$
    500
    141,26 US$
    70 628,65 US$
    1000
    132,95 US$
    132 948,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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