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SI7686DP-T1-GE3

SI7686DP-T1-GE3
Mfr. #:
SI7686DP-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V 35A 37.9W 9.5mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI7686DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI7686DP-T1-GE3 DatasheetSI7686DP-T1-GE3 Datasheet (P4-P6)SI7686DP-T1-GE3 Datasheet (P7-P9)SI7686DP-T1-GE3 Datasheet (P10-P12)SI7686DP-T1-GE3 Datasheet (P13)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SI7
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SI7686DP-GE3
Unidad de peso:
0.017870 oz
Tags
SI7686DP-T1, SI7686DP-T, SI7686DP, SI7686D, SI7686, SI768, SI76, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***y
    A***y
    RU

    Got it. In the work did not check

    2019-06-13
    L***w
    L***w
    PL

    Thank you very much.

    2019-05-30
    A***v
    A***v
    UA

    Everything is super.

    2019-07-13
    L***e
    L***e
    FR

    tout ok

    2019-03-07
***et
Trans MOSFET N-CH 30V 17.9A 8-Pin PowerPAK SO T/R
***C
Trans MOSFET N-CH 30V 17.9A 8-Pin PowerPAK SO
***nell
N CHANNEL MOSFET, 30V, 35A, SOIC
***i-Key
MOSFET N-CH 30V 35A PPAK SO-8
***ark
MOSFET TRANSISTOR; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:35A; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:4.5V ;RoHS Compliant: Yes
***ment14 APAC
N CHANNEL MOSFET, 30V, 35A, SOIC; Transi; N CHANNEL MOSFET, 30V, 35A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:3V; No. of Pins:8
Parte # Mfg. Descripción Valores Precio
SI7686DP-T1-GE3
DISTI # SI7686DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 35A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2983In Stock
  • 1000:$0.8378
  • 500:$1.0112
  • 100:$1.3001
  • 10:$1.6180
  • 1:$1.7900
SI7686DP-T1-GE3
DISTI # SI7686DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 35A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2983In Stock
  • 1000:$0.8378
  • 500:$1.0112
  • 100:$1.3001
  • 10:$1.6180
  • 1:$1.7900
SI7686DP-T1-GE3
DISTI # SI7686DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 35A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.7573
SI7686DP-T1-GE3
DISTI # SI7686DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 17.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7686DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.6579
  • 6000:$0.6379
  • 12000:$0.6119
  • 18000:$0.5949
  • 30000:$0.5789
SI7686DP-T1-GE3
DISTI # 26R1934		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 35A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$1.5900
  • 25:$1.3100
  • 50:$1.1600
  • 100:$1.0000
  • 250:$0.9300
  • 500:$0.8600
  • 1000:$0.6790
SI7686DP-T1-GE3
DISTI # 33P5422		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 35A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$0.7550
  • 3000:$0.7500
  • 6000:$0.7140
  • 12000:$0.6330
SI7686DP-T1-GE3
DISTI # 781-SI7686DP-T1-GE3		Vishay IntertechnologiesMOSFET 30V 35A 37.9W 9.5mohm @ 10V
RoHS: Compliant		5985
  • 1:$1.5900
  • 10:$1.3100
  • 100:$1.0000
  • 500:$0.8600
  • 1000:$0.6790
  • 3000:$0.6340
  • 6000:$0.6020
  • 9000:$0.5790
SI7686DP-T1-GE3
DISTI # 1871384		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 35A, SOIC
RoHS: Compliant		0
  • 3000:£0.6010
SI7686DP-T1-GE3
DISTI # 1871384		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 35A, SOIC
RoHS: Compliant		0
  • 1:$2.5200
  • 10:$2.0700
  • 100:$1.5900
  • 500:$1.3700
  • 1000:$1.0800
  • 3000:$1.0100
  • 6000:$0.9530
  • 9000:$0.9390
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Mfr.#: LNK624DG-TL

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Disponibilidad
Valores:
Available
En orden:
1988
Ingrese la cantidad:
El precio actual de SI7686DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,58 US$
1,58 US$
10
1,30 US$
13,00 US$
100
1,00 US$
100,00 US$
500
0,86 US$
430,00 US$
1000
0,68 US$
679,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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