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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| 2N6796JANTX DISTI # 2N6796JANTX | Infineon Technologies AG | 100 V, 200 V, 400 V AND 500 V, N-CHANNEL, ENHANCEMENT MODE MOSFET POWER TRANSISTOR 3TO-205 - Bulk (Alt: 2N6796JANTX) RoHS: Not Compliant Min Qty: 50 Container: Bulk | Americas - 0 | |
| 2N6796JANTX DISTI # JANTX2N6796 | Infineon Technologies AG | 100 V, 200 V, 400 V AND 500 V, N-CHANNEL, ENHANCEMENT MODE MOSFET POWER TRANSISTOR 3TO-205 - Bulk (Alt: JANTX2N6796) RoHS: Not Compliant Min Qty: 1 Container: Bulk | Americas - 0 | |
| 2N6796JANTXV DISTI # JANTXV2N6796 | Infineon Technologies AG | 100 V, 200 V, 400 V AND 500 V, N-CHANNEL, ENHANCEMENT MODE MOSFET POWER TRANSISTOR 3TO-205 - Bulk (Alt: JANTXV2N6796) RoHS: Not Compliant Min Qty: 1 Container: Bulk | Americas - 0 |
|
| CDDATAPACK/2N6796JANTXV DISTI # CDDATAPACK/2N6796JANTXV | Infineon Technologies AG | Repetitive Avalanche and dv/dt Rated HEXFET Transistor 100V 8A 3-Pin TO-39 Through Hole - Bulk (Alt: CDDATAPACK/2N6796JANTXV) RoHS: Not Compliant Min Qty: 50 Container: Bulk | Americas - 0 | |
| 2N6796JANTXV | International Rectifier | 83 |
| |
| 2N6796JANTXV | GE/CRC | 3 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: 2N6790U OMO.#: OMO-2N6790U-MICROSEMI |
MOSFET N-CH 200V 18LCC |
|
|
Mfr.#: 2N6792 OMO.#: OMO-2N6792-1190 |
Trans MOSFET N-CH 400V 2A 3-Pin TO-39 - Bulk (Alt: 2N6792) |
|
|
Mfr.#: 2N6794JANTX OMO.#: OMO-2N6794JANTX-1190 |
Nuevo y original |
|
Mfr.#: 2N6796 OMO.#: OMO-2N6796-MICROSEMI |
Trans MOSFET N-CH 100V 8A 3-Pin TO-39 |
|
|
Mfr.#: 2N6796CDBN OMO.#: OMO-2N6796CDBN-1190 |
Nuevo y original |
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Mfr.#: 2N6796JANTX OMO.#: OMO-2N6796JANTX-1190 |
100 V, 200 V, 400 V AND 500 V, N-CHANNEL, ENHANCEMENT MODE MOSFET POWER TRANSISTOR 3TO-205 - Bulk (Alt: 2N6796JANTX) |
|
|
Mfr.#: 2N6796TXV OMO.#: OMO-2N6796TXV-1190 |
Nuevo y original |
|
|
Mfr.#: 2N6798 OMO.#: OMO-2N6798-MICROSEMI |
MOSFET N-CH 200V TO-205AF TO-39 |
|
|
Mfr.#: 2N6798CRC OMO.#: OMO-2N6798CRC-1190 |
Nuevo y original |
|
|
Mfr.#: 2N6792TX OMO.#: OMO-2N6792TX-1190 |
Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |