CSD75208W1015T

Mfr. #:: CSD75208W1015T
Descripción:: MOSFET 20V PCH NexFET Pwr MOSFET
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: CSD75208W1015T Ficha de datos
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Más información:: CSD75208W1015T más información CSD75208W1015T Product Details

Atributo del producto
Valor de atributo

Fabricante:: Instrumentos Texas

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: DSBGA-6

Número de canales:: 2 Channel

Polaridad del transistor:: P-Channel

Vds - Voltaje de ruptura de drenaje-fuente:: 20 V

Id - Corriente de drenaje continua:: 1.6 A

Rds On - Resistencia de la fuente de drenaje:: 150 mOhms, 285 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 800 mV

Vgs - Voltaje puerta-fuente:: 6 V

Qg - Carga de puerta:: 1.9 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 750 mW (3/4 W)

Configuración:: Doble

Nombre comercial:: NexFET

Embalaje:: Carrete

Altura:: 0.625 mm

Longitud:: 1.5 mm

Serie:: CSD75208W1015

Tipo de transistor:: 2 P-Channel

Ancho:: 1 mm

Marca:: Instrumentos Texas

Otoño:: 11 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 5 ns

Cantidad de paquete de fábrica:: 250

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 29 ns

Tiempo típico de retardo de encendido:: 9 ns

Unidad de peso:: 0.000060 oz

Tags: CSD7520, CSD752, CSD75, CSD7, CSD

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We provide 90-360 days warranty.

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CSD75208W1015T Descripción

***et: Transistor MOSFET Array Dual P-CH 20V 1.6A 6-Pin DSBGA T/R

***as Instruments: -20-V, P channel NexFET™ power MOSFET, dual Common Source WLP 1 mm x 1.5 mm, 108 mOhm, gate ESD prot 6-DSBGA -55 to 150

***el Electronic: TEXAS INSTRUMENTS CSD75208W1015TDual MOSFET, Dual P Channel, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV

*** Stop Electro: Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, DUAL P-CH, -20V, -1.6A, DSBGA-6; Polarité transistor: Double canal P; Courant de drain Id: -1.6A; Tension Vds max..: -20V; Résistance Rds(on): 0.056ohm; Tension, mesure Rds: -4.5V; Tension de seuil Vgs: -800mV; Dissipa

***emi: N-Channel PowerTrench™ MOSFET, 2.5V Specified, 20V, 1.7A, 70mΩ

***ure Electronics: N-Channel 20 V 0.07 Ohm 2.5 V Specified PowerTrench Mosfet SSOT-3

***-Wing Technology: ON SEMICONDUCTOR - FDN335N - Power MOSFET, N Channel, 20 V, 1.7 A, 0.055 ohm, SOT-23, Surface Mount

***enic: 20V 1.7A 500mW 70m¦¸@4.5V,1.7A 1.5V@250¦ÌA N Channel SOT-23-3 MOSFETs ROHS

***nell: MOSFET, N, 20V, 1.7A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900mV; Powe

***rchild Semiconductor: This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

***emi: N-Channel PowerTrench® MOSFET, 1.8 Vgs Specified, 20V, 2A, 70mΩ

***eco: Transistor MOSFET Negative Channel 20 Volt 2A 3-Pin SuperSOT T/R

***Yang: Trans MOSFET N-CH 20V 2A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled

***ure Electronics: N-Channel 20V 70 mOhm 1.8 V Specified PowerTrench Mosfet - SSOT-3

***enic: 20V 2A 500mW 70m´Î@4.5V2A 1.5V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***nell: MOSFET, N-CH, 20V, 2A, 3-SSOT, RL; Transistor Polarity: N Channel; Continuous Drain Current Id: 2A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700mV; P

***rchild Semiconductor: This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.

***el Electronic: Embedded - Microcontrollers 1 (Unlimited) 128-LQFP 76 7K x 8 Internal DMA, LCD, LVD, POR, PWM, WDT Surface Mount Tray 16-Bit MCU 16-bit 78K0R CISC 128KB Flash 3.3V/5V 128-Pin LQFP

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 120 / Gate-Source Voltage V = 8 / Fall Time ns = 4 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 29 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

***p One Stop: Trans MOSFET N/P-CH 20V 2.7A/1.9A 6-Pin SuperSOT T/R

***emi: Dual N & P-Channel PowerTrench® MOSFET, 2.5V Specified

***-Wing Technology: ON SEMICONDUCTOR - FDC6327C - Dual MOSFET, Complementary N and P Channel, 20 V, 2.7 A, 0.069 ohm, SuperSOT, Surface Mount

*** Stop Electro: Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***rchild Semiconductor: These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

***nell: MOSFET, DUAL NP SUPERSOT-6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 2.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900mV; Power Dissipation Pd: 960mW; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Cont Current Id N Channel 2: 2.7A; Cont Current Id P Channel: 1.6A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 2; On State Resistance N Channel Max: 80mohm; On State Resistance P Channel Max: 170mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 8A; SMD Marking: FDC6327C; Termination Type: Surface Mount Device; Voltage Vds: 20V; Voltage Vgs th Max: 1.5V; Voltage Vgs th P Channel Max: 1.5V

***ark: MOSFET, P CH, W/ESD, 20V, 2A, SOT363; Transistor Polarity:P Channel; Continuous

***el Electronic: VISHAY SI1427EDH-T1-GE3 MOSFET Transistor, P Channel, -2 A, -20 V, 0.05 ohm, -4.5 V, -400 mV

***nell: MOSFET, P CH, W/ESD, 20V, 2A, SOT363; Transistor Polarity:P Channel; Continuous Drain Current Id:-2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-; Operating Temperature Range:-55°C to +150°C

***et Japan: Transistor MOSFET Array Dual P-CH 20V 2A 6-Pin SOT-26 T/R

***ure Electronics: Dual P-Channel 20 V 150 mOhm Enhancement Mode Field Effect Transistor

***des Inc SCT: Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 12±V VGS

***(Formerly Allied Electronics): MOSFET P-Channel 20V 2A SOT26 | Diodes Inc DMP2240UDM-7

***roFlash: Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, AEC-Q101, DUAL P-CH, -20V, SOT26; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -2A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 600mW; Transistor Case Style: SOT-26; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ser: MOSFETs - Low Threshold Voltage Dual P-Channel

***ronik: P+P DUAL-CHAN.-FET 20V 2A SOT26

***ure Electronics: DMP2104V Series P-Channel 20 V 150 mOhm MosFet Surface Mount - SOT-563-6

***ical: Trans MOSFET P-CH 20V 1.9A Automotive 6-Pin SOT-563 T/R

***ark: Mosfet, P Channel, -20V, -860Ma, Sot-563; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:860Ma; On Resistance Rds(On):0.15Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:4.5Vrohs Compliant: Yes |Diodes Inc. DMP2104V-7

***nell: MOSFET P-CHANNEL SOT-563; Transistor Polarity: P Channel; Continuous Drain Current Id: -950mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 170mW; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -860mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: -20V; Voltage Vgs Max: 12V; Voltage Vgs Rds on Measurement: -4.5V

***AS INSRUMENTS: This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

CSD75208W1015T Más información

NexFET P-Channel Power MOSFETs: OMO Electronic NexFET P-Channel Power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.

TI P-Channel MOSFETs - 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Parte #	Descripción	Valores	Precio
CSD75208W1015T DISTI # 31713930	Trans MOSFET P-CH 20V 1.6A 6-Pin DSBGA T/R RoHS: Compliant	10000	1250:$0.2581 750:$0.2877 500:$0.3319 250:$0.3909
CSD75208W1015T DISTI # 296-38340-1-ND	MOSFET 2P-CH 20V 1.6A 6WLP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8732In Stock	100:$0.4144 10:$0.5370 1:$0.6100
CSD75208W1015T DISTI # 296-38340-6-ND	MOSFET 2P-CH 20V 1.6A 6WLP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8732In Stock	100:$0.4144 10:$0.5370 1:$0.6100
CSD75208W1015T DISTI # 296-38340-2-ND	MOSFET 2P-CH 20V 1.6A 6WLP RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	8500In Stock	1250:$0.2533 750:$0.2831 500:$0.3278 250:$0.3874
CSD75208W1015T DISTI # V39:1801_07248898	Trans MOSFET P-CH 20V 1.6A 6-Pin DSBGA T/R RoHS: Compliant	0
CSD75208W1015T DISTI # CSD75208W1015T	Trans MOSFET P-CH 20V 1.6A 6-Pin DSBGA T/R - Tape and Reel (Alt: CSD75208W1015T) RoHS: Compliant Min Qty: 1750 Container: Reel	Americas - 0	17500:$0.1859 8750:$0.1919 5250:$0.1979 3500:$0.2049 1750:$0.2159
CSD75208W1015T	-20V, P ch NexFET MOSFET™, dual Common Source WLP 1.0x1.5, 108mOhm	1000	1000:$0.1700 750:$0.1900 500:$0.2400 250:$0.2900 100:$0.3100 25:$0.3700 10:$0.4000 1:$0.4500
CSD75208W1015T DISTI # 595-CSD75208W1015T	MOSFET 20V PCH NexFET Pwr MOSFET RoHS: Compliant	9239	1:$0.6500 10:$0.5400 100:$0.3280 250:$0.3280 1000:$0.2540 2500:$0.2170 10000:$0.2020 25000:$0.1910
CSD75208W1015 DISTI # 595-CSD75208W1015	MOSFET 20V P-channel NexFET Pwr MOSFET RoHS: Compliant	13062	1:$0.5600 10:$0.4700 100:$0.2840 1000:$0.2200 3000:$0.1880 9000:$0.1750 24000:$0.1660 45000:$0.1620
CSD75208W1015T . DISTI # 2447875RL	MOSFET, DUAL P-CH, -20V, -1.6A, DSBGA-6 RoHS: Compliant	0	100:$0.6330 10:$0.8200 1:$0.9290
CSD75208W1015T . DISTI # 2447875	MOSFET, DUAL P-CH, -20V, -1.6A, DSBGA-6 RoHS: Compliant	0	100:$0.6330 10:$0.8200 1:$0.9290

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Disponibilidad

Valores:: Available
En orden:: 1992
Ingrese la cantidad:

El precio actual de CSD75208W1015T es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,65 US$~~; ~~0,65 US$~~

10: ~~0,54 US$~~; ~~5,40 US$~~

100: ~~0,33 US$~~; ~~32,80 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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CSD75208W1015T

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes