SIA427DJ-T1-GE3

SIA427DJ-T1-GE3
Mfr. #:
SIA427DJ-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET P-CH 8V 12A SC-70-6
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIA427DJ-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SIA427DJ-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
Serie
SIA4xxDJ
embalaje
Carrete
Alias ​​de parte
SIA427DJ-GE3
Estilo de montaje
SMD / SMT
Paquete-Estuche
PowerPAK-SC-70-6
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 P-Channel
Disipación de potencia Pd
3.5 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Vgs-Puerta-Fuente-Voltaje
5 V
Id-corriente-de-drenaje-continua
- 12 A
Vds-Drain-Source-Breakdown-Voltage
- 8 V
Resistencia a la fuente de desagüe de Rds
13 mOhms
Polaridad del transistor
P-Channel
Qg-Gate-Charge
33 nC
Transconductancia directa-Mín.
37 S
Tags
SIA427D, SIA427, SIA42, SIA4, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 8 V 0.013 Ohm 33 nC SMT Power Mosfet - PowerPAK® SC-70-6
***ical
Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
***nell
MOSFET, P CH, -8V, -12A, POWERPAK SC70; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:-1.2V; Power Dissipation Pd:19W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:-
SiA427DJ 8V TrenchFET® Power MOSFETs
Vishay Siliconix SiA427DJ 8V TrenchFET® power MOSFETs have the lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-70 2mm by 2mm footprint area. The on-resistance of the Vishay Siliconix SiA427DJ is up to 47% lower than the closest competing p-channel device. The 1.2V low on-resistance rating of SiA427DJ TrenchFET power MOSFETs makes them ideal for low bus voltages. Applications using a 1.2V power bus will also benefit from the MOSFET's low on-resistance at 1.5V and 1.8V as power line fluctuate, allowing the SiA427DJ to provide the best overall power savings. The utral-small PowerPAK SC-70 package of the Vishay Siliconix SiA427DJ is optimized for small handheld electronics. It is ideal for load switches in cell phones, smart phones, MP3 players, digital cameras, and more. Learn MoreView entire Vishay Siliconix Power MOSFET line
Parte # Mfg. Descripción Valores Precio
SIA427DJ-T1-GE3
DISTI # V72:2272_09216832
Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
2777
  • 1000:$0.1968
  • 500:$0.2422
  • 250:$0.2666
  • 100:$0.2756
  • 25:$0.3422
  • 10:$0.3437
  • 1:$0.4261
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 8V 12A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
24916In Stock
  • 1000:$0.2408
  • 500:$0.3116
  • 100:$0.4249
  • 10:$0.5670
  • 1:$0.6700
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 8V 12A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
24916In Stock
  • 1000:$0.2408
  • 500:$0.3116
  • 100:$0.4249
  • 10:$0.5670
  • 1:$0.6700
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 8V 12A SC-70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
24000In Stock
  • 3000:$0.2131
SIA427DJ-T1-GE3
DISTI # 30150538
Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
2777
  • 1000:$0.1968
  • 500:$0.2422
  • 250:$0.2666
  • 100:$0.2756
  • 37:$0.3422
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA427DJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.1809
  • 6000:$0.1759
  • 12000:$0.1689
  • 18000:$0.1639
  • 30000:$0.1599
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R (Alt: SIA427DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SIA427DJ-T1-GE3
    DISTI # 69W7155
    Vishay IntertechnologiesMOSFET, P CHANNEL, -8V, -12A, POWERPAK SC70-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-8V,On Resistance Rds(on):0.037ohm,Rds(on) Test Voltage Vgs:-1.2V,Threshold Voltage Vgs:350mV, RoHS Compliant: Yes0
      SIA427DJ-T1-GE3.
      DISTI # 30AC0109
      Vishay IntertechnologiesP-CHANNEL 8-V (D-S) MOSFET , ROHS COMPLIANT: NO0
      • 1:$0.2090
      • 3000:$0.2090
      SIA427DJ-T1-GE3Vishay IntertechnologiesSingle P-Channel 8 V 0.013 Ohm 33 nC SMT Power Mosfet - PowerPAK SC-70-6
      RoHS: Compliant
      3000Reel
      • 3000:$0.1720
      SIA427DJ-T1-GE3
      DISTI # 781-SIA427DJ-T1-GE3
      Vishay IntertechnologiesMOSFET 8V 12A 19W 13mohms @ 4.5V
      RoHS: Compliant
      197
      • 1:$0.6000
      • 10:$0.4520
      • 100:$0.3360
      • 500:$0.2760
      • 1000:$0.2130
      • 3000:$0.2090
      SIA427DJ-T1-GE3Vishay Siliconix12 A, 8 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET576
      • 251:$0.1680
      • 57:$0.2400
      • 1:$0.4800
      SIA427DJ-T1-GE3Vishay Semiconductors12 A, 8 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET9
      • 1:$0.4800
      SIA427DJ-T1-GE3
      DISTI # 2459389
      Vishay IntertechnologiesMOSFET, P CHANNEL, -8V, -12A, POWERPAK S
      RoHS: Compliant
      0
      • 1:$0.9500
      • 10:$0.7160
      • 100:$0.5320
      • 500:$0.4370
      • 1000:$0.3380
      • 3000:$0.3310
      SIA427DJ-T1-GE3Vishay IntertechnologiesMOSFET 8V 12A 19W 13mohms @ 4.5V
      RoHS: Compliant
      Americas -
      • 3000:$0.1700
      • 6000:$0.1610
      • 12000:$0.1560
      • 24000:$0.1530
      SIA427DJ-T1-GE3
      DISTI # C1S803601298676
      Vishay IntertechnologiesMOSFETs2877
      • 250:$0.2658
      • 100:$0.2747
      • 25:$0.3407
      • 10:$0.3422
      Imagen Parte # Descripción
      SIA427DJ-T1-GE3

      Mfr.#: SIA427DJ-T1-GE3

      OMO.#: OMO-SIA427DJ-T1-GE3

      MOSFET 8V 12A 19W 13mohms @ 4.5V
      SIA427DJ-T1-GE3-CUT TAPE

      Mfr.#: SIA427DJ-T1-GE3-CUT TAPE

      OMO.#: OMO-SIA427DJ-T1-GE3-CUT-TAPE-1190

      Nuevo y original
      SIA427DJ

      Mfr.#: SIA427DJ

      OMO.#: OMO-SIA427DJ-1190

      Nuevo y original
      SIA427DJ-T1-GE3

      Mfr.#: SIA427DJ-T1-GE3

      OMO.#: OMO-SIA427DJ-T1-GE3-VISHAY

      MOSFET P-CH 8V 12A SC-70-6
      Disponibilidad
      Valores:
      Available
      En orden:
      3500
      Ingrese la cantidad:
      El precio actual de SIA427DJ-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,23 US$
      0,23 US$
      10
      0,22 US$
      2,17 US$
      100
      0,21 US$
      20,52 US$
      500
      0,19 US$
      96,90 US$
      1000
      0,18 US$
      182,40 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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