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DMN2215UDM-7

DMN2215UDM-7
Mfr. #:
DMN2215UDM-7
Fabricante:
Diodes Incorporated
Descripción:
IGBT Transistors MOSFET 650mW 20V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
DMN2215UDM-7 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
DMN2215UDM-7 más información
Atributo del producto
Valor de atributo
Fabricante
Diodos incorporados
categoria de producto
FET: matrices
Serie
DMN22
embalaje
Embalaje alternativo de Digi-ReelR
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOT-23-6
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
SOT-26
Configuración
Doble
Tipo FET
2 N-Channel (Dual)
Potencia máxima
650mW
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
20V
Entrada-Capacitancia-Ciss-Vds
188pF @ 10V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
2A
Rds-On-Max-Id-Vgs
100 mOhm @ 2.5A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Puerta-Carga-Qg-Vgs
-
Disipación de potencia Pd
650 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
3.8 ns
Hora de levantarse
3.8 ns
Vgs-Puerta-Fuente-Voltaje
12 V
Id-corriente-de-drenaje-continua
2 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Vgs-th-Gate-Source-Threshold-Voltage
1 V
Resistencia a la fuente de desagüe de Rds
165 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
19.6 ns
Tiempo de retardo de encendido típico
8 ns
Transconductancia directa-Mín.
5 S
Modo de canal
Mejora
Tags
DMN22, DMN2, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
Supplied as a Tape, Dual N-Channel MOSFET, 2 A, 20 V, 6-Pin SOT-26 Diodes Inc DMN2215UDM-7
***ical
Trans MOSFET N-CH 20V 2A Automotive 6-Pin SOT-26 T/R
***p One Stop Global
Trans MOSFET N-CH 20V 2A 6-Pin SOT-26 T/R
***ure Electronics
DUAL N-CHANNEL 20V, 1.4A, 0.1 ohms @ 4.5V, SOT-26
***ied Electronics & Automation
MOSFET N-Channel 20V 2A SOT26
*** Source Electronics
MOSFET 2N-CH 20V 2A SOT-26
***ronik
N+N DUAL-CHAN.-FET 20V 2A SOT26 RoHSconf
***ark
Mosfet, Dual N-Ch, 20V, Sot-26; Transistor Polarity:dual N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.08Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, DUAL N-CH, 20V, SOT-26; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:650mW; Transistor Case Style:SOT-26; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, DOPPIO CAN-N, 20V, SOT-26; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:2A; Tensione Drain Source Vds:20V; Resistenza di Attivazione Rds(on):0.08ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:1V; Dissipazione di Potenza Pd:650mW; Modello Case Transistor:SOT-26; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.
Parte # Mfg. Descripción Valores Precio
DMN2215UDM-7
DISTI # DMN2215UDMDICT-ND		Diodes IncorporatedMOSFET 2N-CH 20V 2A SOT-26
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1In Stock
  • 1000:$0.2559
  • 500:$0.3238
  • 100:$0.4326
  • 10:$0.5690
  • 1:$0.6700
DMN2215UDM-7
DISTI # DMN2215UDMDIDKR-ND		Diodes IncorporatedMOSFET 2N-CH 20V 2A SOT-26
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1In Stock
  • 1000:$0.2559
  • 500:$0.3238
  • 100:$0.4326
  • 10:$0.5690
  • 1:$0.6700
DMN2215UDM-7
DISTI # DMN2215UDMDITR-ND		Diodes IncorporatedMOSFET 2N-CH 20V 2A SOT-26
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.2286
DMN2215UDM-7
DISTI # DMN2215UDM-7		Diodes IncorporatedTrans MOSFET N-CH 20V 2A 6-Pin SOT-26 T/R (Alt: DMN2215UDM-7)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
  • 3000:$0.1385
  • 6000:$0.1323
  • 9000:$0.1268
  • 15000:$0.1233
  • 30000:$0.1216
  • 75000:$0.1184
  • 150000:$0.1154
DMN2215UDM-7
DISTI # DMN2215UDM-7		Diodes IncorporatedTrans MOSFET N-CH 20V 2A 6-Pin SOT-26 T/R (Alt: DMN2215UDM-7)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.1469
  • 6000:€0.1439
  • 12000:€0.1399
  • 18000:€0.1399
  • 30000:€0.1399
DMN2215UDM-7
DISTI # DMN2215UDM-7		Diodes IncorporatedTrans MOSFET N-CH 20V 2A 6-Pin SOT-26 T/R - Tape and Reel (Alt: DMN2215UDM-7)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1349
  • 6000:$0.1289
  • 12000:$0.1229
  • 18000:$0.1169
  • 30000:$0.1139
DMN2215UDM-7
DISTI # 82Y6573		Diodes IncorporatedMOSFET, DUAL N-CH, 20V, SOT-26,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.08ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power RoHS Compliant: Yes319
  • 1000:$0.2260
  • 500:$0.2480
  • 250:$0.2700
  • 100:$0.2920
  • 50:$0.3530
  • 25:$0.4160
  • 10:$0.4770
  • 1:$0.5830
DMN2215UDM-7
DISTI # 70438070		Diodes IncorporatedMOSFET N-Channel 20V 2A SOT26
RoHS: Compliant		0
  • 125:$0.2900
  • 750:$0.2600
  • 1500:$0.2300
  • 3000:$0.2100
DMN2215UDM-7
DISTI # 621-DMN2215UDM-7		Diodes IncorporatedMOSFET 650mW 20V
RoHS: Compliant		0
  • 1:$0.5200
  • 10:$0.4340
  • 100:$0.2650
  • 1000:$0.2050
  • 3000:$0.1740
DMN2215UDM-7
DISTI # 7514152P		Zetex / Diodes IncMOSFET N-CHANNEL 20V 2A SOT26, RL275
  • 1500:£0.1590
  • 750:£0.1830
  • 150:£0.2060
DMN2215UDM-7
DISTI # 2543539		Diodes IncorporatedMOSFET, DUAL N-CH, 20V, SOT-26
RoHS: Compliant		170
  • 500:£0.1920
  • 250:£0.2010
  • 100:£0.2100
  • 25:£0.3530
  • 5:£0.3910
Imagen Parte # Descripción
DMN2215UDM-7

Mfr.#: DMN2215UDM-7

OMO.#: OMO-DMN2215UDM-7

 MOSFET 650mW 20V
DMN2215UDM

Mfr.#: DMN2215UDM

OMO.#: OMO-DMN2215UDM-1190

 Nuevo y original
DMN2215UDM-7

Mfr.#: DMN2215UDM-7

OMO.#: OMO-DMN2215UDM-7-DIODES

 IGBT Transistors MOSFET 650mW 20V
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de DMN2215UDM-7 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,17 US$
0,17 US$
10
0,16 US$
1,62 US$
100
0,15 US$
15,38 US$
500
0,15 US$
72,60 US$
1000
0,14 US$
136,70 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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