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STU75N3LLH6

STU75N3LLH6
Mfr. #:
STU75N3LLH6
Fabricante:
STMicroelectronics
Descripción:
MOSFET POWER MOSFET N-CH 30V 75 A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STU75N3LLH6 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STU75N3LLH6 más información STU75N3LLH6 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-251-3
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
75 A
Rds On - Resistencia de la fuente de drenaje:
4.2 mOhms
Nombre comercial:
STripFET
Embalaje:
Tubo
Serie:
STU75N3LLH6
Marca:
STMicroelectronics
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Unidad de peso:
0.139332 oz
Tags
STU75, STU7, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 30 V, 0.0042 Ohm, 75 A, IPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
***r Electronics
Power Field-Effect Transistor, 75A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ark
MOSFET, N CH, 30V, 75A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; MSL:- RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 75A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 60W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH 30V 86A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:86A; Package / Case:IPAK; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
***i-Key
MOSFET N-CH 30V 90A IPAK
***ser
MOSFETs 30V N-Channel PowerTrench SyncFET
***el Nordic
Contact for details
***Yang
30V,35A,5.7MO,NCH, IPAK, POWER TRENCH MOSFET - Bulk
***ser
MOSFETs 30V N-Channel PowerTrench
***r Electronics
Power Field-Effect Transistor, 17A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***(Formerly Allied Electronics)
MOSFET, 25V, 81A, 5.7 MOHM, 10 NC QG, LOGIC LEVEL, I-PAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH 25V 81A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:81A; Package / Case:IPAK; Power Dissipation Pd:63W; Power Dissipation Pd:63W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
***ser
MOSFETs- Power and Small Signal NFET 30V 76A 6MOHM
***r Electronics
Power Field-Effect Transistor, 11A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***Yang
NFET DPAK 30V 76A 6MOHM - Rail/Tube
***or
MOSFET N-CH 30V 11.3A/79A IPAK
***th Star Micro
Not recommended for new design. Use NTD4906N
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:76A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:60W ;RoHS Compliant: Yes
***ser
MOSFETs- Power and Small Signal NFET 30V 88A 5MOHM
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:88A; On Resistance, Rds(on):5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 30V, 3 I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:88A; Resistance, Rds On:0.005ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:66W; Voltage, Vds Max:30V
Parte # Mfg. Descripción Valores Precio
STU75N3LLH6
DISTI # 497-12701-5-ND		STMicroelectronicsMOSFET N-CH 30V 75A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    STU75N3LLH6-S
    DISTI # STU75N3LLH6-S-ND    		STMicroelectronicsMOSFET N-CH 30V 75A IPAK
    RoHS: Compliant
    Min Qty: 3000
    Container: Tube    		Limited Supply - Call
      STU75N3LLH6
      DISTI # STU75N3LLH6      		STMicroelectronicsTrans MOSFET N-CH 30V 75A 3-Pin(3+Tab) IPAK Tube (Alt: STU75N3LLH6)
      RoHS: Compliant
      Min Qty: 75
      Container: Tube      		Europe - 0
      • 750:€0.3369
      • 450:€0.3869
      • 300:€0.4459
      • 150:€0.5469
      • 75:€0.6839
      STU75N3LLH6
      DISTI # 71R7084      		STMicroelectronicsMOSFET, N CH, 30V, 75A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0046ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Product Range:- RoHS Compliant: Yes0
      • 10000:$0.4280
      • 2500:$0.4410
      • 1000:$0.5470
      • 500:$0.6260
      • 100:$0.7080
      • 10:$0.9220
      • 1:$1.0800
      STU75N3LLH6
      DISTI # 511-STU75N3LLH6      		STMicroelectronicsMOSFET POWER MOSFET N-CH 30V 75 A
      RoHS: Compliant      		0
      • 1:$1.0800
      • 10:$0.9220
      • 100:$0.7080
      • 500:$0.6260
      • 1000:$0.4940
      • 3000:$0.4380
      • 9000:$0.4220
      STU75N3LLH6-S
      DISTI # N/A      		STMicroelectronicsMOSFET Short IPAK0
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        Disponibilidad
        Valores:
        Available
        En orden:
        1985
        Ingrese la cantidad:
        El precio actual de STU75N3LLH6 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1,08 US$
        1,08 US$
        10
        0,92 US$
        9,22 US$
        100
        0,71 US$
        70,80 US$
        500
        0,63 US$
        313,00 US$
        1000
        0,49 US$
        494,00 US$
        3000
        0,44 US$
        1 314,00 US$
        9000
        0,42 US$
        3 798,00 US$
        24000
        0,41 US$
        9 792,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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