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SI5414DC-T1-GE3

SI5414DC-T1-GE3
Mfr. #:
SI5414DC-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 20V 6.0A 6.3W 17mohm @ 4.5V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI5414DC-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI5414DC-T1-GE3 DatasheetSI5414DC-T1-GE3 Datasheet (P4-P6)SI5414DC-T1-GE3 Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
ChipFET-8
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.1 mm
Longitud:
3.05 mm
Serie:
SI5
Ancho:
1.65 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SI5414DC-GE3
Unidad de peso:
0.002998 oz
Tags
SI541, SI54, SI5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 6A 8-Pin Chip FET T/R
***i-Key
MOSFET N-CH 20V 6A 1206-8
***ment14 APAC
N CHANNEL MOSFET, 20V, 6A; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:20V; On Resistance Rds(on):17mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.5V
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:6A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.017ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
SI5414DC-T1-GE3
DISTI # SI5414DC-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 20V 6A 1206-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.2893
SI5414DC-T1-GE3
DISTI # SI5414DC-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 6A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5414DC-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.2429
  • 18000:$0.2499
  • 12000:$0.2569
  • 6000:$0.2679
  • 3000:$0.2759
SI5414DC-T1-GE3
DISTI # 781-SI5414DC-GE3		Vishay IntertechnologiesMOSFET 20V 6.0A 6.3W 17mohm @ 4.5V
RoHS: Compliant		0
  • 3000:$0.2760
  • 6000:$0.2570
  • 9000:$0.2480
  • 24000:$0.2380
Imagen Parte # Descripción
SI5414DC-T1-GE3

Mfr.#: SI5414DC-T1-GE3

OMO.#: OMO-SI5414DC-T1-GE3

 MOSFET 20V 6.0A 6.3W 17mohm @ 4.5V
SI5414DC-T1-GE3

Mfr.#: SI5414DC-T1-GE3

OMO.#: OMO-SI5414DC-T1-GE3-VISHAY

 MOSFET N-CH 20V 6A 1206-8
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de SI5414DC-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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