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SIHU3N50D-E3

SIHU3N50D-E3
Mfr. #:
SIHU3N50D-E3
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET 500V 3.2ohm@10V 3A N-Ch D-SRS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHU3N50D-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHU3N50D-E3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
E
embalaje
Tubo
Alias ​​de parte
SIHU3N50D-GE3
Unidad de peso
0.011640 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
IPAK-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
104 W
Vgs-Puerta-Fuente-Voltaje
5 V
Id-corriente-de-drenaje-continua
3 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Resistencia a la fuente de desagüe de Rds
3.2 Ohms
Polaridad del transistor
Canal N
Qg-Gate-Charge
6 nC
Tags
SIHU3N50D, SIHU3, SIHU, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Parte # Mfg. Descripción Valores Precio
SIHU3N50D-E3
DISTI # SIHU3N50D-E3-ND		Vishay SiliconixMOSFET N-CH 500V 3A TO251 IPAK
RoHS: Compliant
Min Qty: 3000
Container: Tube		Temporarily Out of Stock
  • 3000:$0.3992
SIHU3N50D-E3
DISTI # SIHU3N50D-E3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-251AA - Tape and Reel (Alt: SIHU3N50D-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3769
  • 6000:$0.3659
  • 12000:$0.3509
  • 18000:$0.3409
  • 30000:$0.3319
SIHU3N50D-E3
DISTI # 78-SIHU3N50D-E3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		2630
  • 1:$0.9100
  • 10:$0.7470
  • 100:$0.5730
  • 500:$0.4930
  • 1000:$0.3890
  • 2500:$0.3630
  • 5000:$0.3450
  • 10000:$0.3370
SIHU3N50D-GE3
DISTI # 78-SIHU3N50D-GE3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		2999
  • 1:$0.9300
  • 10:$0.7410
  • 100:$0.5620
  • 500:$0.4640
  • 1000:$0.3720
  • 3000:$0.3370
  • 6000:$0.3140
  • 9000:$0.3020
SIHU3N50D-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		Americas -
    Imagen Parte # Descripción
    SIHU3N50DA-GE3

    Mfr.#: SIHU3N50DA-GE3

    OMO.#: OMO-SIHU3N50DA-GE3

    		 MOSFET 500V Vds 30V Vgs IPAK (TO-251)
    SIHU3N50D-E3

    Mfr.#: SIHU3N50D-E3

    OMO.#: OMO-SIHU3N50D-E3

    		 MOSFET 500V Vds 30V Vgs IPAK (TO-251)
    SIHU3N50D-E3

    Mfr.#: SIHU3N50D-E3

    OMO.#: OMO-SIHU3N50D-E3-VISHAY

    		 IGBT Transistors MOSFET 500V 3.2ohm@10V 3A N-Ch D-SRS
    SIHU3N50D-GE3

    Mfr.#: SIHU3N50D-GE3

    OMO.#: OMO-SIHU3N50D-GE3-VISHAY

    		 MOSFET N-CH 500V 3A TO251 IPAK
    SIHU3N50GE3

    Mfr.#: SIHU3N50GE3

    OMO.#: OMO-SIHU3N50GE3-1190

    		 Nuevo y original
    SIHU3N50DA-GE3

    Mfr.#: SIHU3N50DA-GE3

    OMO.#: OMO-SIHU3N50DA-GE3-VISHAY

    		 MOSFET N-CHANNEL 500V 3A IPAK
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de SIHU3N50D-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,50 US$
    0,50 US$
    10
    0,47 US$
    4,73 US$
    100
    0,45 US$
    44,81 US$
    500
    0,42 US$
    211,60 US$
    1000
    0,40 US$
    398,30 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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