HGTP7N60C3D,G7N60C3D

HGTP7N60C3D,G7N60C3D
Mfr. #:
HGTP7N60C3D,G7N60C3D
Fabricante:
ON Semiconductor
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTP7N60C3D,G7N60C3D Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
HGTP7N60C, HGTP7, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
HGTP7N60C3D
DISTI # HGTP7N60C3D-ND
ON SemiconductorIGBT 600V 14A 60W TO220AB
RoHS: Not compliant
Min Qty: 400
Container: Tube
Limited Supply - Call
    HGTP7N60C3D
    DISTI # HGTP7N60C3D
    ON SemiconductorUFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE - Bulk (Alt: HGTP7N60C3D)
    Min Qty: 194
    Container: Bulk
    Americas - 0
    • 1940:$1.4900
    • 194:$1.5900
    • 388:$1.5900
    • 582:$1.5900
    • 970:$1.5900
    HGTP7N60C3D
    DISTI # 58K8906
    ON SemiconductorSINGLE IGBT, 600V, 14A,DC Collector Current:14A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:60W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes0
      HGTP7N60C3D
      DISTI # 512-HGTP7N60C3D
      ON SemiconductorIGBT Transistors 14a 600V N-Ch IGBT UFS Series
      RoHS: Compliant
      0
        HGTP7N60C3DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        RoHS: Compliant
        115
        • 1000:$1.0900
        • 500:$1.1500
        • 100:$1.2000
        • 25:$1.2500
        • 1:$1.3400
        HGTP7N60C3DHarris SemiconductorInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        RoHS: Not Compliant
        18321
        • 1000:$1.7000
        • 500:$1.7900
        • 100:$1.8600
        • 25:$1.9400
        • 1:$2.0900
        HGTP7N60C3D...
        DISTI # 1738519
        ON Semiconductor 
        RoHS: Compliant
        0
        • 2500:$2.4800
        • 1000:$2.7400
        • 500:$3.1300
        • 100:$3.4700
        • 10:$4.1100
        • 1:$4.6000
        Imagen Parte # Descripción
        HGTP7N60C3D

        Mfr.#: HGTP7N60C3D

        OMO.#: OMO-HGTP7N60C3D

        IGBT Transistors 14a 600V N-Ch IGBT UFS Series
        HGTP7N60C3

        Mfr.#: HGTP7N60C3

        OMO.#: OMO-HGTP7N60C3-1190

        Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        HGTP7N60C3D

        Mfr.#: HGTP7N60C3D

        OMO.#: OMO-HGTP7N60C3D-ON-SEMICONDUCTOR

        IGBT 600V 14A 60W TO220AB
        HGTP7N60C3D,G7N60C3D

        Mfr.#: HGTP7N60C3D,G7N60C3D

        OMO.#: OMO-HGTP7N60C3D-G7N60C3D-1190

        Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        3000
        Ingrese la cantidad:
        El precio actual de HGTP7N60C3D,G7N60C3D es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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