SIA517DJ-T1-GE3

Mfr. #:: SIA517DJ-T1-GE3
Fabricante:: Vishay
Descripción:: MOSFET N/P-CH 12V 4.5A SC-70-6
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SIA517DJ-T1-GE3 Ficha de datos
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Más información:: SIA517DJ-T1-GE3 más información

Atributo del producto
Valor de atributo

Fabricante: VISHAY

categoria de producto: FET: matrices

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: SIA517DJ-GE3

Unidad de peso: 0.000988 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: PowerPAKR SC-70-6 Dual

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 2 Channel

Paquete de dispositivo de proveedor: PowerPAKR SC-70-6 Dual

Configuración: 1 N-Channel 1 P-Channel

Tipo FET: Canal N y P

Potencia máxima: 6.5W

Tipo transistor: 1 N-Channel 1 P-Channel

Drenaje-a-fuente-voltaje-Vdss: 12V

Entrada-Capacitancia-Ciss-Vds: 500pF @ 6V

Función FET: Puerta de nivel lógico

Corriente-Continuo-Drenaje-Id-25 ° C: 4.5A

Rds-On-Max-Id-Vgs: 29 mOhm @ 5A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Puerta-Carga-Qg-Vgs: 15nC @ 8V

Disipación de potencia Pd: 6.5 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 10 ns 25 ns

Hora de levantarse: 10 ns 25 ns

Vgs-Puerta-Fuente-Voltaje: 8 V

Id-corriente-de-drenaje-continua: 4.5 A

Vds-Drain-Source-Breakdown-Voltage: 12 V

Resistencia a la fuente de desagüe de Rds: 24 mOhms 50 mOhms

Polaridad del transistor: Canal N Canal P

Tiempo de retardo de apagado típico: 22 ns 30 ns

Tiempo de retardo de encendido típico: 10 ns 30 ns

Modo de canal: Mejora

Tags: SIA517DJ-T1-G, SIA517DJ-T1, SIA517DJ-T, SIA517, SIA51, SIA5, SIA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA517DJ-T1-GE3 Descripción

***ied Electronics & Automation: SIA517DJ-T1-GE3 Dual N/P-channel MOSFETTransistor; 4.3 A; 4.5 A; 12V; 6-Pin SC-70

***et Europe: Trans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R

***Components: In a Pack of 20, Dual N/P-Channel-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 (SC-70) Vishay SIA517DJ-T1-GE3

***ure Electronics: N- AND P-CHANNEL 12-V (D-S) MOSFET

***i-Key: MOSFET N/P-CH 12V 4.5A SC-70-6

***: N-AND P-CHANNEL 20-V (D-S)

***ark: Transistor Polarity:n And P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.024Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400Mv; Power Dissipation Pd:6.5W Rohs Compliant: No

***ment14 APAC: Prices include import duty and tax. MOSFET, N&P-CH, 12V, 4.5A, POWERPAK SC70; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissipation Pd:6.5W; Transistor Case Style:PowerPAK SC70; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

***nell: MOSFET CAN N/P, 12V, 4.5A, POWERPAK SC70; Polarità Transistor:Canale N e P; Corrente Continua di Drain Id:4.5A; Tensione Drain Source Vds:12V; Resistenza di Attivazione Rds(on):0.024ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:1V; Dissipazione di Potenza Pd:6.5W; Modello Case Transistor:PowerPAK SC70; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)

SIA517DJ-T1-GE3 Más información

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

N & P Channel Pair Thermally Enhanced MOSFETs: Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SIA517DJ-T1-GE3 DISTI # SIA517DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.2387
SIA517DJ-T1-GE3 DISTI # SIA517DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.2697 500:$0.3490 100:$0.4759 10:$0.6340 1:$0.7500
SIA517DJ-T1-GE3 DISTI # SIA517DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.2697 500:$0.3490 100:$0.4759 10:$0.6340 1:$0.7500
SIA517DJ-T1-GE3 DISTI # SIA517DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R (Alt: SIA517DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	3000:$0.2864 6000:$0.2203 9000:$0.1754 15000:$0.1482 30000:$0.1364 75000:$0.1322 150000:$0.1283
SIA517DJ-T1-GE3 DISTI # SIA517DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA517DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2099 6000:$0.1979 12000:$0.1969 18000:$0.1969 30000:$0.1959
SIA517DJ-T1-GE3 DISTI # SIA517DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 12V 4.5A/4.3A 6-Pin PowerPAK SC-70 T/R (Alt: SIA517DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.5819 6000:€0.3969 12000:€0.3419 18000:€0.3159 30000:€0.2939
SIA517DJ-T1-GE3 DISTI # 05W6926	Vishay Intertechnologies	MOSFET, NP CHANNEL, 12V, 4.5A, POWERPAK SC70,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins , RoHS Compliant: Yes	0	1:$0.7500 10:$0.6340 25:$0.5810 50:$0.5280 100:$0.4750 500:$0.3490 1000:$0.2690
SIA517DJ-T1-GE3. DISTI # 15AC0288	Vishay Intertechnologies	Transistor Polarity:N and P Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV,Power Dissipation Pd:6.5W , RoHS Compliant: No	0	1:$0.2170 3000:$0.2100 6000:$0.2030
SIA517DJ-T1-GE3 DISTI # 70616550	Vishay Siliconix	SIA517DJ-T1-GE3 Dual N/P-channel MOSFETTransistor,4.3 A,4.5 A,12V,6-Pin SC-70 RoHS: Compliant	0	300:$0.5400 600:$0.4800 1500:$0.4200 3000:$0.3800
SIA517DJ-T1-GE3 DISTI # 781-SIA517DJ-GE3	Vishay Intertechnologies	MOSFET 12V Vds 8V Vgs PowerPAK SC-70 RoHS: Compliant	5505	1:$0.6700 10:$0.5060 100:$0.3760 500:$0.3090 1000:$0.2390 3000:$0.2170 6000:$0.2030
SIA517DJ-T1-GE3 DISTI # 8141225P	Vishay Intertechnologies	TRANS MOSFET N/P-CH 12V 4.5A/4.3A, RL	440	200:£0.1960
SIA517DJ-T1-GE3 DISTI # 2889717	Vishay Intertechnologies	MOSFET, N&P-CH, 12V, 4.5A, POWERPAK SC70 RoHS: Compliant	0	5:$1.2400 25:$1.0200 100:$0.8030 250:$0.6600 500:$0.5610 1000:$0.5300 5000:$0.5120
SIA517DJ-T1-GE3 DISTI # 2889717	Vishay Intertechnologies	MOSFET, N&P-CH, 12V, 4.5A, POWERPAK SC70 RoHS: Compliant	0	5:£0.3710 25:£0.3070 100:£0.2750 250:£0.2540 500:£0.2370
SIA517DJ-T1-GE3	Vishay Intertechnologies	MOSFET 12V Vds 8V Vgs PowerPAK SC-70 RoHS: Compliant	Americas - Stock

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Valores:: Available
En orden:: 1500
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El precio actual de SIA517DJ-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,16 US$~~; ~~0,16 US$~~

10: ~~0,15 US$~~; ~~1,50 US$~~

100: ~~0,14 US$~~; ~~14,21 US$~~

500: ~~0,13 US$~~; ~~67,10 US$~~

1000: ~~0,13 US$~~; ~~126,30 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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SIA517DJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes