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SI2351DS-T1-GE3

SI2351DS-T1-GE3
Mfr. #:
SI2351DS-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2351DS-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SI2
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SI2351DS-GE3
Unidad de peso:
0.000282 oz
Tags
SI2351, SI235, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 20V 2.2A 3-Pin SOT-23 T/R
***ronik
P-CHAN.-FET 4A 30V SOT23 RoHSconf
***ment14 APAC
MOSFET,P CH,20V,2.8A,SOT23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):92mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:-2.2A; Power Dissipation Pd:1W; Voltage Vgs Max:-12V
Parte # Mfg. Descripción Valores Precio
SI2351DS-T1-GE3
DISTI # SI2351DS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 20V 2.8A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    SI2351DS-T1-GE3
    DISTI # SI2351DS-T1-GE3DKR-ND    		Vishay SiliconixMOSFET P-CH 20V 2.8A SOT23-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SI2351DS-T1-GE3
      DISTI # 75AC1953      		Vishay IntertechnologiesMOSFET,P CH,20V,2.8A,SOT23-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-3A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.092ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1.5V,Power RoHS Compliant: Yes2940
      • 1000:$0.2190
      • 500:$0.2770
      • 250:$0.3150
      • 100:$0.3680
      • 50:$0.4130
      • 25:$0.4670
      • 10:$0.5120
      • 1:$0.5720
      SI2351DS-T1-GE3
      DISTI # 781-SI2351DS-T1-GE3      		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
      RoHS: Compliant      		0
        SI2351DS-T1-GE3
        DISTI # 1838998        		Vishay IntertechnologiesMOSFET,P CH,20V,2.8A,SOT23-32904
        • 500:£0.1540
        • 250:£0.1700
        • 100:£0.1850
        • 25:£0.2760
        • 5:£0.3040
        Imagen Parte # Descripción
        SI2351DS-T1-GE3

        Mfr.#: SI2351DS-T1-GE3

        OMO.#: OMO-SI2351DS-T1-GE3

        		 MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
        SI2351DS

        Mfr.#: SI2351DS

        OMO.#: OMO-SI2351DS-1190

        		 Nuevo y original
        SI2351DS-T1-E3

        Mfr.#: SI2351DS-T1-E3

        OMO.#: OMO-SI2351DS-T1-E3-VISHAY

        		 MOSFET P-CH 20V 2.8A SOT23-3
        SI2351DS-T1-GE3

        Mfr.#: SI2351DS-T1-GE3

        OMO.#: OMO-SI2351DS-T1-GE3-VISHAY

        		 MOSFET P-CH 20V 2.8A SOT23-3
        Disponibilidad
        Valores:
        Available
        En orden:
        4000
        Ingrese la cantidad:
        El precio actual de SI2351DS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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