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SIR470DP-T1-GE3

SIR470DP-T1-GE3
Mfr. #:
SIR470DP-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 40V 60A PPAK SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIR470DP-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SIR470DP-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SIR814DP-T1-GE3
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
PowerPAKR SO-8
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
PowerPAKR SO-8
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
104W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
40V
Entrada-Capacitancia-Ciss-Vds
5660pF @ 20V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
60A (Tc)
Rds-On-Max-Id-Vgs
2.3 mOhm @ 20A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Puerta-Carga-Qg-Vgs
155nC @ 10V
Disipación de potencia Pd
6.25 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
39 ns
Hora de levantarse
31 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
60 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Vgs-th-Gate-Source-Threshold-Voltage
2.5 V
Resistencia a la fuente de desagüe de Rds
2.2 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
85 ns
Tiempo de retardo de encendido típico
40 ns
Transconductancia directa-Mín.
190 S
Modo de canal
Mejora
Tags
SIR470DP-T1-G, SIR470DP-T, SIR470, SIR47, SIR4, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 0.0023 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
***nell
N CHANNEL MOSFET, 40V, 60A, SOIC, FULL R
***ical
Trans MOSFET N-CH 40V 60A 8-Pin PowerPAK SO EP T/R
***ment14 APAC
N CHANNEL MOSFET, 40V, 60A, SOIC; Transi; N CHANNEL MOSFET, 40V, 60A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.5V; No. of Pins:8
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Parte # Mfg. Descripción Valores Precio
SIR470DP-T1-GE3
DISTI # V72:2272_09215740		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
RoHS: Compliant		3061
  • 3000:$0.9248
  • 1000:$1.0275
  • 500:$1.1417
  • 250:$1.2685
  • 100:$1.4095
  • 25:$1.5432
  • 10:$1.7148
  • 1:$1.9734
SIR470DP-T1-GE3
DISTI # V36:1790_09215740		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
RoHS: Compliant		3000
  • 3000:$1.1663
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7200In Stock
  • 1000:$1.4950
  • 500:$1.8043
  • 100:$2.3198
  • 10:$2.8870
  • 1:$3.2000
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7200In Stock
  • 1000:$1.4950
  • 500:$1.8043
  • 100:$2.3198
  • 10:$2.8870
  • 1:$3.2000
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$1.3514
SIR470DP-T1-GE3
DISTI # 25789916		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
RoHS: Compliant		3061
  • 3000:$0.9248
  • 1000:$1.0275
  • 500:$1.1417
  • 250:$1.2685
  • 100:$1.4095
  • 25:$1.5432
  • 10:$1.7148
  • 9:$1.9734
SIR470DP-T1-GE3
DISTI # 26960935		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
RoHS: Compliant		3000
  • 3000:$1.1663
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R (Alt: SIR470DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 3000
  • 3000:€1.7659
  • 6000:€1.2369
  • 12000:€1.0199
  • 18000:€0.9059
  • 30000:€0.8569
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SIR470DP-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape		Americas - 2071
  • 1:$0.8239
  • 30:$0.8219
  • 75:$0.8199
  • 150:$0.8179
  • 375:$0.8159
  • 750:$0.8139
  • 1500:$0.8119
SIR470DP-T1-GE3
DISTI # SIR470DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR470DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.7809
  • 6000:$0.7569
  • 12000:$0.7269
  • 18000:$0.7069
  • 30000:$0.6879
SIR470DP-T1-GE3
DISTI # 69W7167		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 69W7167)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$3.4000
  • 25:$2.8200
  • 50:$2.5100
  • 100:$2.1800
  • 250:$2.0500
  • 500:$1.9200
  • 1000:$1.8200
SIR470DP-T1-GE3
DISTI # 69W7167		Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
  • 1:$3.4000
  • 25:$2.8200
  • 50:$2.5100
  • 100:$2.1800
  • 250:$2.0500
  • 500:$1.9200
  • 1000:$1.8200
SIR470DP-T1-GE3
DISTI # 16P3655		Vishay IntertechnologiesN CHANNEL MOSFET, 40V, 60A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0019ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.5V , RoHS Compliant: Yes0
  • 1:$1.5200
  • 3000:$1.5200
SIR470DP-T1-GE3.
DISTI # 30AC0120		Vishay IntertechnologiesN-CHANNEL 40-V (D-S) MOSFET , ROHS COMPLIANT: YES0
  • 1:$1.5200
  • 3000:$1.5200
SIR470DP-T1-GE3
DISTI # 781-SIR470DP-T1-GE3		Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		4162
  • 1:$2.8300
  • 10:$2.3500
  • 100:$1.8200
  • 500:$1.6000
  • 1000:$1.5500
  • 3000:$1.5200
SIR470DP-T1-GE3Vishay Intertechnologies 1438
    SIR470DP-T1-GE3
    DISTI # C1S803601363615    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
    RoHS: Compliant    		3100
    • 250:$1.2639
    • 100:$1.4043
    • 25:$1.5360
    • 10:$1.7066
    SIR470DP-T1-GE3
    DISTI # C1S806001173655    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
    RoHS: Compliant    		3000
    • 3000:$1.1623
    SIR470DP-T1-GE3
    DISTI # 2335403    		Vishay IntertechnologiesMOSFET, N CH, 40V, 60A, POWERPAK SO
    RoHS: Compliant    		2477
    • 1:$4.4800
    • 10:$3.7200
    • 100:$2.8800
    • 500:$2.5400
    • 1000:$2.4100
    • 3000:$2.4100
    SIR470DP-T1-GE3
    DISTI # 2335403    		Vishay IntertechnologiesMOSFET, N CH, 40V, 60A, POWERPAK SO
    RoHS: Compliant    		2547
    • 1:£2.1800
    • 10:£1.8200
    • 100:£1.4000
    • 250:£1.3200
    • 500:£1.2300
    SIR470DP-T1-GE3
    DISTI # XSFP00000063578    		Vishay Siliconix 
    RoHS: Compliant    		4038
    • 3000:$1.5200
    • 4038:$1.3800
    SIR470DP-T1-GE3Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		Americas - 24000
    • 3000:$0.7360
    • 6000:$0.6960
    • 12000:$0.6740
    • 24000:$0.6640
    SIR470DP-T1-GE3.Vishay IntertechnologiesMOSFET 40V 60A 104W 2.3mohm @ 10V
    RoHS: Compliant    		Americas - 460
    • 10:$1.3200
    • 100:$1.0160
    • 250:$0.9330
    • 500:$0.8480
    • 1000:$0.7710
    Imagen Parte # Descripción
    SIR470DP-T1-GE3

    Mfr.#: SIR470DP-T1-GE3

    OMO.#: OMO-SIR470DP-T1-GE3

    		 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
    SIR470DP

    Mfr.#: SIR470DP

    OMO.#: OMO-SIR470DP-1190

    		 Nuevo y original
    SIR470DP-T1-E3

    Mfr.#: SIR470DP-T1-E3

    OMO.#: OMO-SIR470DP-T1-E3-1190

    		 Nuevo y original
    SIR470DP-T1-GE3

    Mfr.#: SIR470DP-T1-GE3

    OMO.#: OMO-SIR470DP-T1-GE3-VISHAY

    		 MOSFET N-CH 40V 60A PPAK SO-8
    SIR470DP-T1-GE3 BSC017

    Mfr.#: SIR470DP-T1-GE3 BSC017

    OMO.#: OMO-SIR470DP-T1-GE3-BSC017-1190

    		 Nuevo y original
    SIR470DP-T1-GE3-Z

    Mfr.#: SIR470DP-T1-GE3-Z

    OMO.#: OMO-SIR470DP-T1-GE3-Z-1190

    		 Nuevo y original
    SIR470DP-T1-GE3.

    Mfr.#: SIR470DP-T1-GE3.

    OMO.#: OMO-SIR470DP-T1-GE3--1190

    		 N CHANNEL MOSFET, 40V, 60A, SOIC, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0019ohm, Rds(on) Test Voltage Vg
    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de SIR470DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,00 US$
    1,00 US$
    10
    0,95 US$
    9,52 US$
    100
    0,90 US$
    90,18 US$
    500
    0,85 US$
    425,85 US$
    1000
    0,80 US$
    801,60 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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