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NDB5060L

NDB5060L
Mfr. #:
NDB5060L
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET N-Ch LL FET Enhancement Mode
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NDB5060L Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
26 A
Rds On - Resistencia de la fuente de drenaje:
42 mOhms
Vgs - Voltaje puerta-fuente:
16 V
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
68 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
4.83 mm
Longitud:
10.67 mm
Serie:
NDB5060L
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
9.65 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
102 ns
Tipo de producto:
MOSFET
Hora de levantarse:
200 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
45 ns
Tiempo típico de retardo de encendido:
13 ns
Unidad de peso:
0.046296 oz
Tags
NDB506, NDB50, NDB5, NDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 26A, 35mΩ
***ow.cn
Trans MOSFET N-CH 60V 26A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 60 V 50 mO 3.7 W Surface Mount Power Mosfet - TO-263
***rchild Semiconductor
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Parte # Mfg. Descripción Valores Precio
NDB5060L
DISTI # NDB5060LCT-ND		ON SemiconductorMOSFET N-CH 60V 26A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		67In Stock
  • 100:$1.2494
  • 10:$1.5810
  • 1:$1.7800
NDB5060L
DISTI # NDB5060LDKR-ND		ON SemiconductorMOSFET N-CH 60V 26A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		67In Stock
  • 100:$1.2494
  • 10:$1.5810
  • 1:$1.7800
NDB5060L
DISTI # NDB5060LTR-ND		ON SemiconductorMOSFET N-CH 60V 26A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		On Order
  • 800:$0.8219
NDB5060L
DISTI # NDB5060L		ON SemiconductorTrans MOSFET N-CH 60V 26A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: NDB5060L)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$0.5109
  • 1600:$0.5079
  • 3200:$0.5009
  • 4800:$0.4949
  • 8000:$0.4829
NDB5060L
DISTI # NDB5060L		ON SemiconductorTrans MOSFET N-CH 60V 26A 3-Pin(2+Tab) D2PAK T/R (Alt: NDB5060L)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
    NDB5060L
    DISTI # 83C0056    		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,26A I(D),TO-263AB ROHS COMPLIANT: YES0
    • 1:$0.6440
    • 800:$0.6400
    • 2400:$0.5810
    • 9600:$0.5630
    NDB5060L
    DISTI # 512-NDB5060L    		ON SemiconductorMOSFET N-Ch LL FET Enhancement Mode
    RoHS: Compliant    		12
    • 1:$1.4800
    • 10:$1.2700
    • 100:$0.9680
    • 500:$0.8560
    NDB5060LFairchild Semiconductor CorporationPower Field-Effect Transistor, 26A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		1885
    • 1000:$0.8300
    • 500:$0.8700
    • 100:$0.9100
    • 25:$0.9500
    • 1:$1.0200
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    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de NDB5060L es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,59 US$
    1,59 US$
    10
    1,35 US$
    13,50 US$
    100
    1,08 US$
    108,00 US$
    500
    0,95 US$
    473,50 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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