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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SI4900DY-T1-E3 DISTI # 781-SI4900DY-E3 | Vishay Intertechnologies | MOSFET 60V 5.3A 3.1W RoHS: Compliant | 4962 |
|
| SI4900DYE3 | Vishay Siliconix | Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant | 480 | |
| SI4900DY-T1-E3 | Vishay Intertechnologies | MOSFET 60V 5.3A 3.1W | Americas - |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: SI4908DY-T1-E3 OMO.#: OMO-SI4908DY-T1-E3 |
MOSFET DUAL N-CH 40V(D-S) |
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Mfr.#: SI4906DY-T1-E3 OMO.#: OMO-SI4906DY-T1-E3 |
MOSFET RECOMMENDED ALT 78-SI4288DY-T1-GE3 |
|
Mfr.#: SI4909DY-T1-GE3-CUT TAPE |
Nuevo y original |
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Mfr.#: SI4900DY-T1-E3 OMO.#: OMO-SI4900DY-T1-E3-VISHAY |
MOSFET 2N-CH 60V 5.3A 8-SOIC |
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Mfr.#: SI4900DY-TI-E3 OMO.#: OMO-SI4900DY-TI-E3-1190 |
Nuevo y original |
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Mfr.#: SI4904DY OMO.#: OMO-SI4904DY-1190 |
Nuevo y original |
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Mfr.#: SI4906DY OMO.#: OMO-SI4906DY-1190 |
Nuevo y original |
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Mfr.#: SI4906DYT1GE3 OMO.#: OMO-SI4906DYT1GE3-1190 |
Small Signal Field-Effect Transistor, 5.3A I(D), 40V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA |
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Mfr.#: SI4909 OMO.#: OMO-SI4909-1190 |
Nuevo y original |
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Mfr.#: SI4908DY-T1-GE3 OMO.#: OMO-SI4908DY-T1-GE3-VISHAY |
MOSFET 2N-CH 40V 5A 8-SOIC |