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SIHB21N60EF-GE3

SIHB21N60EF-GE3
Mfr. #:
SIHB21N60EF-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHB21N60EF-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB21N60EF-GE3 DatasheetSIHB21N60EF-GE3 Datasheet (P4-P6)SIHB21N60EF-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SIHB21N60EF-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Embalaje:
Carrete
Serie:
EF
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Unidad de peso:
0.050717 oz
Tags
SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
Parte # Mfg. Descripción Valores Precio
SIHB21N60EF-GE3
DISTI # V99:2348_14140925		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) TO-263AB
RoHS: Compliant		1000
  • 1000:$2.3790
  • 500:$2.4140
  • 250:$2.6980
  • 100:$2.8129
  • 10:$3.4370
  • 1:$4.6068
SIHB21N60EF-GE3
DISTI # V72:2272_14140925		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) TO-263AB
RoHS: Compliant		400
  • 75000:$2.2050
  • 30000:$2.2300
  • 15000:$2.2550
  • 6000:$2.2800
  • 3000:$2.3050
  • 1000:$2.3300
  • 500:$2.3640
  • 250:$2.6429
  • 100:$2.7560
  • 50:$3.3680
  • 25:$3.4020
  • 10:$3.4370
  • 1:$4.6068
SIHB21N60EF-GE3
DISTI # SIHB21N60EF-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 21A D2PAK TO263
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 3000:$2.1003
  • 1000:$2.2109
  • 100:$3.0794
  • 25:$3.5532
  • 10:$3.7580
  • 1:$4.1800
SIHB21N60EF-GE3
DISTI # 32676130		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) TO-263AB
RoHS: Compliant		1000
  • 3:$4.6068
SIHB21N60EF-GE3
DISTI # 32331796		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin(2+Tab) TO-263AB
RoHS: Compliant		400
  • 3:$4.6068
SIHB21N60EF-GE3
DISTI # SIHB21N60EF-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin TO-263 - Tape and Reel (Alt: SIHB21N60EF-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.8900
  • 10000:$1.8900
  • 4000:$1.9900
  • 1000:$2.0900
  • 2000:$2.0900
SIHB21N60EF-GE3
DISTI # SIHB21N60EF-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 21A 3-Pin TO-263 (Alt: SIHB21N60EF-GE3)
RoHS: Compliant
Min Qty: 50		Europe - 0
  • 500:€1.8900
  • 300:€1.9900
  • 200:€2.1900
  • 100:€2.6900
  • 50:€3.4900
SIHB21N60EF-GE3
DISTI # 78-SIHB21N60EF-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		1000
  • 1:$4.2100
  • 10:$3.4800
  • 100:$2.8700
  • 250:$2.7800
  • 500:$2.4900
  • 1000:$2.1000
  • 2000:$2.0000
SIHB21N60EF-GE3Vishay Intertechnologies 1000
    SIHB21N60EF-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		Americas -
      Imagen Parte # Descripción
      SIHB21N60EF-GE3

      Mfr.#: SIHB21N60EF-GE3

      OMO.#: OMO-SIHB21N60EF-GE3

      		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
      SIHB21N65EF-GE3

      Mfr.#: SIHB21N65EF-GE3

      OMO.#: OMO-SIHB21N65EF-GE3

      		 MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
      SIHB21N60EF-GE3

      Mfr.#: SIHB21N60EF-GE3

      OMO.#: OMO-SIHB21N60EF-GE3-VISHAY

      		 MOSFET N-CH 600V 21A D2PAK TO263
      SIHB21N65EF-GE3

      Mfr.#: SIHB21N65EF-GE3

      OMO.#: OMO-SIHB21N65EF-GE3-VISHAY

      		 MOSFET N-CH 650V 21A D2PAK
      Disponibilidad
      Valores:
      Available
      En orden:
      1984
      Ingrese la cantidad:
      El precio actual de SIHB21N60EF-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      4,21 US$
      4,21 US$
      10
      3,48 US$
      34,80 US$
      100
      2,87 US$
      287,00 US$
      250
      2,78 US$
      695,00 US$
      500
      2,49 US$
      1 245,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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