IXTH12N65X2

IXTH12N65X2
Mfr. #:
IXTH12N65X2
Fabricante:
Littelfuse
Descripción:
MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTH12N65X2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTH12N65X2 DatasheetIXTH12N65X2 Datasheet (P4-P6)
ECAD Model:
Más información:
IXTH12N65X2 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
12 A
Rds On - Resistencia de la fuente de drenaje:
300 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
17.7 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
180 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Tipo de transistor:
1 N-Channel
Marca:
IXYS
Otoño:
16 ns
Tipo de producto:
MOSFET
Hora de levantarse:
24 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
52 ns
Tiempo típico de retardo de encendido:
23 ns
Tags
IXTH12N, IXTH12, IXTH1, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet, N-Ch, 650V, 12A, To-247
***ure Electronics
MOSFET MSFT N-CH ULTRA JNCT X2 344
***nell
MOSFET, N-CH, 650V, 12A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Powe
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFET™
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Parte # Mfg. Descripción Valores Precio
IXTH12N65X2
DISTI # IXTH12N65X2-ND
IXYS CorporationMOSFET N-CH 650V 12A TO-247
RoHS: Compliant
Min Qty: 60
Container: Tube
Temporarily Out of Stock
  • 60:$2.9700
IXTH12N65X2
DISTI # 9171457P
IXYS CorporationN-CH X2 SERIES MOSFET 650V 12A TO-247, TU38
  • 240:£2.1700
  • 120:£2.2750
  • 30:£2.3100
  • 10:£2.3550
IXTH12N65X2
DISTI # 2674779
IXYS CorporationMOSFET, N-CH, 650V, 12A, TO-247
RoHS: Compliant
0
  • 2500:$3.0500
  • 1000:$3.1100
  • 500:$3.1600
  • 250:$3.3200
  • 100:$3.5000
  • 25:$3.7100
  • 10:$4.1900
  • 1:$4.4800
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OMO.#: OMO-IXTH10P60-IXYS-CORPORATION

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Mfr.#: IXTH11N80

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IXTH12N100A

Mfr.#: IXTH12N100A

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IXTH16P60

Mfr.#: IXTH16P60

OMO.#: OMO-IXTH16P60-1190

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IXTH160N10T

Mfr.#: IXTH160N10T

OMO.#: OMO-IXTH160N10T-IXYS-CORPORATION

MOSFET N-CH 100V 160A TO-247
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de IXTH12N65X2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
4,24 US$
4,24 US$
10
3,79 US$
37,90 US$
25
3,30 US$
82,50 US$
50
3,23 US$
161,50 US$
100
3,11 US$
311,00 US$
250
2,66 US$
665,00 US$
500
2,52 US$
1 260,00 US$
1000
2,13 US$
2 130,00 US$
2500
1,82 US$
4 550,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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