FQP14N30

FQP14N30
Mfr. #:
FQP14N30
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 300V N-Channel QFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQP14N30 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
300 V
Id - Corriente de drenaje continua:
9.1 A
Rds On - Resistencia de la fuente de drenaje:
290 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
147 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
QFET
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Serie:
FQP14N30
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
9.5 S
Otoño:
70 ns
Tipo de producto:
MOSFET
Hora de levantarse:
145 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
45 ns
Tiempo típico de retardo de encendido:
22 ns
Parte # Alias:
FQP14N30_NL
Unidad de peso:
0.063493 oz
Tags
FQP14N, FQP14, FQP1, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 300 V, 14.4 A, 290 mΩ, TO-220
***ure Electronics
Single N-Channel 300 V 147 W 40 nC Silicon Through Hole Mosfet - TO-220-3
***et Europe
Trans MOSFET N-CH 300V 14.4A 3-Pin(3+Tab) TO-220AB Rail
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Parte # Mfg. Descripción Valores Precio
FQP14N30
DISTI # 31022056
ON Semiconductor300V N-CHANNEL QFET1000
  • 10000:$0.6163
  • 5000:$0.6413
  • 2500:$0.6662
  • 1000:$0.7152
FQP14N30
DISTI # FQP14N30-ND
ON SemiconductorMOSFET N-CH 300V 14.4A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
1049In Stock
  • 1000:$0.8190
  • 500:$0.9885
  • 100:$1.2709
  • 10:$1.5820
  • 1:$1.7500
FQP14N30
DISTI # C1S541901511492
ON SemiconductorTrans MOSFET N-CH 300V 14.4A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
1000
  • 1000:$0.7810
FQP14N30
DISTI # FQP14N30
ON SemiconductorTrans MOSFET N-CH 300V 14.4A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP14N30)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.5829
  • 2000:$0.5789
  • 4000:$0.5719
  • 6000:$0.5649
  • 10000:$0.5509
FQP14N30
DISTI # 82C4318
ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,300V V(BR)DSS,14.4A I(D),TO-220 ROHS COMPLIANT: YES0
  • 1:$1.8500
  • 10:$1.4400
  • 100:$1.1300
  • 1000:$0.7710
  • 2000:$0.7660
  • 10000:$0.7250
  • 24000:$0.7050
  • 50000:$0.6890
FQP14N30
DISTI # 512-FQP14N30
ON SemiconductorMOSFET 300V N-Channel QFET
RoHS: Compliant
707
  • 1:$1.5200
  • 10:$1.2900
  • 100:$1.0300
  • 500:$0.8990
  • 1000:$0.7450
  • 2500:$0.6940
  • 5000:$0.6680
  • 10000:$0.6420
FQP14N30Fairchild Semiconductor CorporationPower Field-Effect Transistor, 14.4A I(D), 300V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
79171
  • 1000:$0.9700
  • 500:$1.0300
  • 100:$1.0700
  • 25:$1.1100
  • 1:$1.2000
FQP14N30
DISTI # 6715039P
ON SemiconductorMOSFET N-CHANNEL 300V 14.4A TO220AB, TU105
  • 25:£1.0260
  • 100:£0.9220
  • 250:£0.8680
  • 500:£0.8120
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Mfr.#: LPV821DBVR

OMO.#: OMO-LPV821DBVR

Operational Amplifiers - Op Amps ZERO-DRIFT LOW POWER AMPLIFIER
MCP6V51T-E/OT

Mfr.#: MCP6V51T-E/OT

OMO.#: OMO-MCP6V51T-E-OT

Operational Amplifiers - Op Amps Single, 45V Zero-Drift Op Amp, E Temp
MCP1416T-E/OT

Mfr.#: MCP1416T-E/OT

OMO.#: OMO-MCP1416T-E-OT

Gate Drivers 1.5A SNGL MOSFET Drvr
STM32L083CZT6

Mfr.#: STM32L083CZT6

OMO.#: OMO-STM32L083CZT6

ARM Microcontrollers - MCU 16/32-BITS MICROS
CGA3E1X7R1E105K080AE

Mfr.#: CGA3E1X7R1E105K080AE

OMO.#: OMO-CGA3E1X7R1E105K080AE

Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 0603 25V 1uF X7R 10% AEC-Q200
DV164035

Mfr.#: DV164035

OMO.#: OMO-DV164035

Hardware Debuggers MPLAB ICD3
AMC1100DWVR

Mfr.#: AMC1100DWVR

OMO.#: OMO-AMC1100DWVR-TEXAS-INSTRUMENTS

Isolation Amplifiers 4.25kV peak Isolated Amplif Measr 8-SOIC
MCP1416T-E/OT

Mfr.#: MCP1416T-E/OT

OMO.#: OMO-MCP1416T-E-OT-MICROCHIP-TECHNOLOGY

IC MOSFET DVR 1.5A HS SOT23-5
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de FQP14N30 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,52 US$
1,52 US$
10
1,29 US$
12,90 US$
100
1,03 US$
103,00 US$
500
0,90 US$
449,50 US$
1000
0,74 US$
745,00 US$
2500
0,69 US$
1 735,00 US$
5000
0,67 US$
3 340,00 US$
10000
0,64 US$
6 420,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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