SI6968BEDQ-T1-E3

Mfr. #:: SI6968BEDQ-T1-E3
Fabricante:: Vishay
Descripción:: MOSFET 2N-CH 20V 5.2A 8TSSOP
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI6968BEDQ-T1-E3 Ficha de datos
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Fabricante: Vishay Siliconix

categoria de producto: FET: matrices

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: SI6968BEDQ-E3

Unidad de peso: 0.005573 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: 8-TSSOP (0.173", 4.40mm Width)

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 2 Channel

Paquete de dispositivo de proveedor: 8-TSSOP

Configuración: Doble

Tipo FET: 2 N-Channel (Dual) Common Drain

Potencia máxima: 1W

Tipo transistor: 2 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 20V

Entrada-Capacitancia-Ciss-Vds: -

Función FET: Puerta de nivel lógico

Corriente-Continuo-Drenaje-Id-25 ° C: 5.2A

Rds-On-Max-Id-Vgs: 22 mOhm @ 6.5A, 4.5V

Vgs-th-Max-Id: 1.6V @ 250μA

Puerta-Carga-Qg-Vgs: 18nC @ 4.5V

Disipación de potencia Pd: 1.5 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 510 ns

Hora de levantarse: 330 ns

Vgs-Puerta-Fuente-Voltaje: 12 V

Id-corriente-de-drenaje-continua: 6.5 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Resistencia a la fuente de desagüe de Rds: 22 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 860 ns

Tiempo de retardo de encendido típico: 245 ns

Transconductancia directa-Mín.: 30 S

Modo de canal: Mejora

Tags: SI6968BEDQ-T1-E, SI6968BEDQ-T1, SI6968BEDQ-T, SI6968BEDQ, SI6968BED, SI6968B, SI6968, SI696, SI69, SI6

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI6968BEDQ-T1-E3 DISTI # V72:2272_09215422	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R RoHS: Compliant	3000	3000:$0.3701 1000:$0.5217 500:$0.6165 250:$0.6629 100:$0.7366 25:$0.8474 10:$0.8599 1:$0.9237
SI6968BEDQ-T1-E3 DISTI # SI6968BEDQ-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 5.2A 8TSSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2213In Stock	1000:$0.6798 500:$0.8611 100:$1.1103 10:$1.4050 1:$1.5900
SI6968BEDQ-T1-E3 DISTI # SI6968BEDQ-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 5.2A 8TSSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2213In Stock	1000:$0.6798 500:$0.8611 100:$1.1103 10:$1.4050 1:$1.5900
SI6968BEDQ-T1-E3 DISTI # SI6968BEDQ-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 5.2A 8TSSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.6160
SI6968BEDQ-T1-E3 DISTI # 29433491	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R RoHS: Compliant	3000	3000:$0.3701 1000:$0.5217 500:$0.6165 250:$0.6629 100:$0.7366 26:$0.8474
SI6968BEDQ-T1-E3 DISTI # SI6968BEDQ-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6968BEDQ-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2539 6000:$0.2469 12000:$0.2369 18000:$0.2299 30000:$0.2239
SI6968BEDQ-T1-E3 DISTI # SI6968BEDQ-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R (Alt: SI6968BEDQ-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.4459 6000:€0.3039 12000:€0.2619 18000:€0.2419 30000:€0.2249
SI6968BEDQ-T1-E3 DISTI # 06J8126	Vishay Intertechnologies	Trans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R - Product that comes on tape, but is not reeled (Alt: 06J8126) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.9900 25:$1.7600 50:$1.5800 100:$1.4000 250:$1.2500 500:$1.0800 1000:$0.8530
SI6968BEDQ-T1-E3 DISTI # 06J8126	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 20V, 5.2A, TSSOP-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.2A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0165ohm,Rds(on) Test Voltage Vgs:4.5V,Power Dissipation Pd:1W , RoHS Compliant: Yes	2343	1:$1.9900 25:$1.7600 50:$1.5800 100:$1.4000 250:$1.2500 500:$1.0800 1000:$0.8530
SI6968BEDQ-T1-E3. DISTI # 28AC2158	Vishay Intertechnologies	N-CH 2.5-V (G-S) MOSFET COMMONDRAIN ESD , ROHS COMPLIANT: NO	0	1:$0.2540 6000:$0.2470 12000:$0.2370 18000:$0.2300 30000:$0.2240
SI6968BEDQ-T1-E3 DISTI # 70026260	Vishay Siliconix	SI6968BEDQ-T1-E3 N-channel MOSFET Module,5.2 A,20 V,8-Pin TSSOP RoHS: Compliant	0	3000:$0.6200 6000:$0.5800 9000:$0.5500
SI6968BEDQ-T1-E3/BKN DISTI # 70026373	Vishay Siliconix	N-CH 2.5-V (G-S) MOSFET COMMONDRAIN ESD RoHS: Compliant	0	1:$0.7100 250:$0.6700 500:$0.6400 1000:$0.6100 2000:$0.5800
SI6968BEDQ-T1-E3	Vishay Intertechnologies	Dual N-Channel 20 V 0.022 Ohms Surface Mount Power Mosfet - TSSOP-8 RoHS: Compliant	57000Reel	3000:$0.3850
SI6968BEDQ-T1-E3 DISTI # 781-SI6968BEDQ-E3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs TSSOP-8 RoHS: Compliant	2347	1:$1.6600 10:$1.4700 100:$1.1700 500:$0.9010 1000:$0.7110 3000:$0.6440
SI6968BEDQ-T1 DISTI # 781-SI6968BEDQ	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs TSSOP-8 RoHS: Not compliant	0
SI6968BEDQ-T1-E3	Vishay Intertechnologies		17949
SI6968BEDQ-T1-E3 DISTI # C1S803600929566	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3000	250:$0.6592 100:$0.7324 25:$0.8416 10:$0.8539
SI6968BEDQ-T1-E3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs TSSOP-8	Americas -
SI6968BEDQ-T1-E3 DISTI # 2300518	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 20V, 5.2A, TSSOP-8 RoHS: Compliant	2343	1:$2.5200 10:$2.2300 100:$1.7600 500:$1.3700 1000:$1.0800
SI6968BEDQ-T1-E3 DISTI # XSFP00000103646	Vishay Siliconix	RoHS: Compliant	38361	3000:$0.7700 38361:$0.7000
SI6968BEDQ-T1-E3 DISTI # 2300518	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 20V, 5.2A, TSSOP RoHS: Compliant	2343	1:£1.7400 25:£1.5500 50:£1.3800 100:£1.2300 250:£1.1000

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: SI6968BEDQ-T1-GE3 OMO.#: OMO-SI6968BEDQ-T1-GE3	MOSFET 20V Vds 12V Vgs TSSOP-8
	Mfr.#: SI6968BEDQ-T1 OMO.#: OMO-SI6968BEDQ-T1-1190	MOSFET RECOMMENDED ALT 781-SI6968BEDQ-E3
	Mfr.#: SI6968BEDQ-T1-E3 OMO.#: OMO-SI6968BEDQ-T1-E3-VISHAY	MOSFET 2N-CH 20V 5.2A 8TSSOP
	Mfr.#: SI6968BEDQ-T1-E3. OMO.#: OMO-SI6968BEDQ-T1-E3--1190	Transistor Polarity:Dual N Channel, Continuous Drain Current Id:5.2A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.0165ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1.6V, Po
	Mfr.#: SI6968BEDQ-T1-GE3 OMO.#: OMO-SI6968BEDQ-T1-GE3-VISHAY	MOSFET 2N-CH 20V 5.2A 8-TSSOP
	Mfr.#: SI6968BEDQ-T1-T1-E3 OMO.#: OMO-SI6968BEDQ-T1-T1-E3-1190	Nuevo y original
	Mfr.#: SI6968BEDQ-T1/6968E OMO.#: OMO-SI6968BEDQ-T1-6968E-1190	Nuevo y original
	Mfr.#: SI6968BEDQ-TI OMO.#: OMO-SI6968BEDQ-TI-1190	Nuevo y original
	Mfr.#: SI6968BEDQ-TI-E3 OMO.#: OMO-SI6968BEDQ-TI-E3-1190	Nuevo y original
	Mfr.#: SI6968BEDQT1GE3 OMO.#: OMO-SI6968BEDQT1GE3-1190	Small Signal Field-Effect Transistor, 5.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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El precio actual de SI6968BEDQ-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,24 US$~~; ~~0,24 US$~~

10: ~~0,23 US$~~; ~~2,28 US$~~

100: ~~0,22 US$~~; ~~21,60 US$~~

500: ~~0,20 US$~~; ~~102,00 US$~~

1000: ~~0,19 US$~~; ~~192,00 US$~~

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SI6968BEDQ-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes