OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

SCT3017ALHRC11

SCT3017ALHRC11
Mfr. #:
SCT3017ALHRC11
Fabricante:
Rohm Semiconductor
Descripción:
MOSFET 650V 118A 427W SIC 17mOhm TO-247N
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SCT3017ALHRC11 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SCT3017ALHRC11 más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Sic
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247N-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
118 A
Rds On - Resistencia de la fuente de drenaje:
17 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.7 V
Vgs - Voltaje puerta-fuente:
- 4 V, 22 V
Qg - Carga de puerta:
172 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
427 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
SCT3x
Tipo de transistor:
1 N-Channel
Marca:
Semiconductor ROHM
Transconductancia directa - Mín .:
16 S
Otoño:
31 ns
Tipo de producto:
MOSFET
Hora de levantarse:
44 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
64 ns
Tiempo típico de retardo de encendido:
30 ns
Tags
SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
AEC-Q101 SiC Power MOSFETs
ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch mode power supplies. The SiC Power MOSFETs can be used to boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles.
Parte # Mfg. Descripción Valores Precio
SCT3017ALHRC11
DISTI # SCT3017ALHRC11-ND		ROHM SemiconductorAUTOMOTIVE GRADE N-CHANNEL SIC P
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 25:$96.1000
  • 10:$98.7880
  • 1:$104.1600
SCT3017ALHRC11
DISTI # 02AH4678		ROHM SemiconductorMOSFET, N-CH, 650V, 118A, 175DEG C, 427W,Transistor Polarity:N Channel,Continuous Drain Current Id:118A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.017ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,PowerRoHS Compliant: Yes0
  • 100:$83.5200
  • 50:$88.8600
  • 25:$90.1800
  • 10:$91.5300
  • 5:$94.2400
  • 1:$96.8400
SCT3017ALHRC11
DISTI # 755-SCT3017ALHRC11		ROHM SemiconductorMOSFET 650V 118A 427W SIC 17mOhm TO-247N
RoHS: Compliant		0
  • 1:$107.5200
  • 5:$105.5400
  • 10:$100.8000
  • 25:$96.1000
SCT3017ALHRC11
DISTI # TMOS2736		ROHM SemiconductorSiC N-CH 650V 118A 17mOhm
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$96.9300
SCT3017ALHRC11
DISTI # 3052180		ROHM SemiconductorMOSFET, N-CH, 650V, 118A, 175DEG C, 427W0
  • 10:£73.3200
  • 5:£77.6800
  • 1:£82.0300
SCT3017ALHRC11
DISTI # 3052180		ROHM SemiconductorMOSFET, N-CH, 650V, 118A, 175DEG C, 427W
RoHS: Compliant		0
  • 1:$146.5300
SCT3017ALHRC11ROHM SemiconductorMOSFET 650V 118A 427W SIC 17mOhm TO-247N
RoHS: Compliant		Americas -
    Imagen Parte # Descripción
    SCT3017ALHRC11

    Mfr.#: SCT3017ALHRC11

    OMO.#: OMO-SCT3017ALHRC11

    		 MOSFET 650V 118A 427W SIC 17mOhm TO-247N
    SCT3017ALGC11

    Mfr.#: SCT3017ALGC11

    OMO.#: OMO-SCT3017ALGC11-1190

    		 MOSFET, N-CH, 650V, 118A, 175DEG C, 427W, Transistor Polarity:N Channel, Continuous Drain Current Id:118A, Drain Source Voltage Vds:650V, On Resistance Rds(on):0.017ohm, Rds(on) Test Voltage Vgs:
    SCT3017ALHRC11

    Mfr.#: SCT3017ALHRC11

    OMO.#: OMO-SCT3017ALHRC11-ROHM-SEMI

    		 AUTOMOTIVE GRADE N-CHANNEL SIC P
    Disponibilidad
    Valores:
    Available
    En orden:
    4000
    Ingrese la cantidad:
    El precio actual de SCT3017ALHRC11 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    107,52 US$
    107,52 US$
    5
    105,54 US$
    527,70 US$
    10
    100,80 US$
    1 008,00 US$
    25
    96,10 US$
    2 402,50 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Nuevos productos
    More Newest Products
    Top