IRF6716MTR1PBF

IRF6716MTR1PBF
Mfr. #:
IRF6716MTR1PBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF6716MTR1PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6716MTR1PBF DatasheetIRF6716MTR1PBF Datasheet (P4-P6)IRF6716MTR1PBF Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
DirectFET-MX
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
25 V
Id - Corriente de drenaje continua:
39 A
Rds On - Resistencia de la fuente de drenaje:
2.6 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
39 nC
Pd - Disipación de energía:
78 W
Configuración:
Único
Embalaje:
Carrete
Altura:
0.7 mm
Longitud:
6.35 mm
Tipo de transistor:
1 N-Channel
Ancho:
5.05 mm
Marca:
Infineon / IR
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
SP001532376
Tags
IRF6716M, IRF6716, IRF671, IRF67, IRF6, IRF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 25V 39A 7-Pin Direct-FET MX T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 39 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:39A; On Resistance, Rds(on):1.2mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:MX ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, DIRECTFET, 25V, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.2mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Transistor Case Style:MX; No. of Pins:5; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:6716; Current Id Max:39A; Package / Case:MX; Power Dissipation Pd:3.6mW; Pulse Current Idm:320A; SMD Marking:3.6; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.4V; Voltage Vgs th Min:1.4V
***(Formerly Allied Electronics)
MOSFET, N-Ch, VDSS 25V, RDS(ON) 1.3 mOhm, ID 24A, DirectFET
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 34 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
MOSFET, N, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2.8W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Current Id Max:34A; Package / Case:MX; Power Dissipation Pd:2.8W; Pulse Current Idm:270A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.4V
***ical
Trans MOSFET N-CH 25V 36A 7-Pin Direct-FET MX T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 36 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
MOSFET, N-CH, 25V, DIRECTFETMX; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:MX; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DirectFET; Current Id Max:36A; Package / Case:MX; Power Dissipation Pd:2.8W; Pulse Current Idm:300A; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V
***ical
Trans MOSFET N-CH 25V 38A 7-Pin Direct-FET MX T/R
***ernational Rectifier
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 38 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ment14 APAC
MOSFET N CH, 25V 38A SMD; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:96W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Current Id Max:220A; Driver Case Style:MX; Package / Case:L6; Power Dissipation Pd:2.8W; Power Dissipation Pd:96W; Pulse Current Idm:38A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V
***(Formerly Allied Electronics)
A 30V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MX PACKAGE RATED AT 31
***ark
N Channel, MOSFET, 30V, 32A, DirectFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 31A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; No. of Pins:7; SVHC:No SVHC (19-Dec-2011)
***icroelectronics
N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
*** Source Electronics
Trans MOSFET N-CH 30V 195A 8-Pin Power Flat T/R / MOSFET N-CH 30V 35A POWERFLAT6X5
***ure Electronics
N-Channel 30 V 1.75 mOhm Surface Mount STripFET™ V MosFet - PowerFLAT 5x6
***ark
Mosfet, N Channel, 30V, 35A, Powerflat6X5; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0014Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10Vrohs Compliant: Yes
***ical
Trans MOSFET N-CH 20V 32A 7-Pin Direct-FET MT T/R
***ment14 APAC
MOSFET, N, DIRECTFET, 20V, MT; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Transistor Case Style:DirectFET; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Base Number:6691; Current Id Max:26A; Package / Case:MT; Power Dissipation Pd:2.8mW; Pulse Current Idm:260A; SMD Marking:2.8; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1.6V
***ernational Rectifier
A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only.
Parte # Mfg. Descripción Valores Precio
IRF6716MTR1PBF
DISTI # IRF6716MTR1PBFTR-ND
Infineon Technologies AGMOSFET N-CH 25V 39A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRF6716MTR1PBF
    DISTI # IRF6716MTR1PBFCT-ND
    Infineon Technologies AGMOSFET N-CH 25V 39A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IRF6716MTR1PBF
      DISTI # IRF6716MTR1PBFDKR-ND
      Infineon Technologies AGMOSFET N-CH 25V 39A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IRF6716MTR1PBF
        DISTI # 70018859
        Infineon Technologies AG600V Ultrafast 8-25 kHz COPACK IGBT In a D2-PAK Package
        RoHS: Compliant
        0
        • 1000:$1.8200
        • 2000:$1.6500
        IRF6716MTR1PBF
        DISTI # 942-IRF6716MTR1PBF
        Infineon Technologies AGMOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC
        RoHS: Compliant
        0
          IRF6716MTR1PBF
          DISTI # 1436939
          Infineon Technologies AGMOSFET, N, DIRECTFET, 25V, MX
          RoHS: Compliant
          0
          • 1:$5.0800
          • 10:$4.1800
          • 100:$3.3900
          • 250:$3.0300
          • 500:$2.6800
          • 1000:$2.5000
          Imagen Parte # Descripción
          IRF6716MTRPBF

          Mfr.#: IRF6716MTRPBF

          OMO.#: OMO-IRF6716MTRPBF

          MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC
          IRF6716MTR1PBF

          Mfr.#: IRF6716MTR1PBF

          OMO.#: OMO-IRF6716MTR1PBF

          MOSFET 25V 1 N-CH HEXFET 1.6mOhms 39nC
          IRF6716MTR1PBF

          Mfr.#: IRF6716MTR1PBF

          OMO.#: OMO-IRF6716MTR1PBF-INFINEON-TECHNOLOGIES

          MOSFET N-CH 25V 39A DIRECTFET
          IRF6716MTRPBF.

          Mfr.#: IRF6716MTRPBF.

          OMO.#: OMO-IRF6716MTRPBF--1190

          Nuevo y original
          IRF6716PBF

          Mfr.#: IRF6716PBF

          OMO.#: OMO-IRF6716PBF-1190

          Nuevo y original
          IRF6716MTRPBF

          Mfr.#: IRF6716MTRPBF

          OMO.#: OMO-IRF6716MTRPBF-INFINEON-TECHNOLOGIES

          MOSFET N-CH 25V 39A DIRECTFET
          Disponibilidad
          Valores:
          Available
          En orden:
          3000
          Ingrese la cantidad:
          El precio actual de IRF6716MTR1PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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