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IXFX52N100X

IXFX52N100X
Mfr. #:
IXFX52N100X
Fabricante:
Littelfuse
Descripción:
MOSFET 1000V 52A PLUS247 Power MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFX52N100X Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXFX52N100X más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
PLUS247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1000 V
Id - Corriente de drenaje continua:
52 A
Rds On - Resistencia de la fuente de drenaje:
125 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
245 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1250 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
Clase X
Tipo de transistor:
1 N-Channel
Marca:
IXYS
Transconductancia directa - Mín .:
23 S
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
13 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
107 ns
Tiempo típico de retardo de encendido:
34 ns
Tags
IXFX52N, IXFX52, IXFX5, IXFX, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
X-Class 850V - 1000V Power MOSFETs with HiPerFET™
IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Parte # Mfg. Descripción Valores Precio
IXFX52N100X
DISTI # IXFX52N100X-ND		IXYS CorporationMOSFET 1KV 52A ULTRA JCT PLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube		20In Stock
  • 510:$16.5600
  • 120:$18.9600
  • 30:$20.4000
  • 10:$22.2000
  • 1:$24.0000
IXFX52N100X
DISTI # 747-IXFX52N100X		IXYS CorporationMOSFET 1000V 52A PLUS247 Power MOSFET
RoHS: Compliant		54
  • 1:$24.0000
  • 5:$22.8000
  • 10:$22.2000
  • 25:$20.4000
  • 50:$19.5300
  • 100:$18.9600
  • 250:$17.4000
Imagen Parte # Descripción
HSA5012RJ

Mfr.#: HSA5012RJ

OMO.#: OMO-HSA5012RJ

 Wirewound Resistors - Chassis Mount HSA50 12R 5%
HSA505R0J

Mfr.#: HSA505R0J

OMO.#: OMO-HSA505R0J-TE-CONNECTIVITY-AMP

 Wirewound Resistors - Chassis Mount
HSA5012RJ

Mfr.#: HSA5012RJ

OMO.#: OMO-HSA5012RJ-TE-CONNECTIVITY-AMP

 Wirewound Resistors - Chassis Mount HSA50 12R 5%
HS300 560R F

Mfr.#: HS300 560R F

OMO.#: OMO-HS300-560R-F-OHMITE

 Wirewound Resistors - Chassis Mount 300W 560 1%
Disponibilidad
Valores:
54
En orden:
2037
Ingrese la cantidad:
El precio actual de IXFX52N100X es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
24,00 US$
24,00 US$
5
22,80 US$
114,00 US$
10
22,20 US$
222,00 US$
25
20,40 US$
510,00 US$
50
19,53 US$
976,50 US$
100
18,96 US$
1 896,00 US$
250
17,40 US$
4 350,00 US$
500
16,56 US$
8 280,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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