CSD19535KCS

CSD19535KCS
Mfr. #:
CSD19535KCS
Descripción:
MOSFET 100V N-CH NexFET Pwr MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CSD19535KCS Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
CSD19535KCS más información CSD19535KCS Product Details
Atributo del producto
Valor de atributo
Fabricante:
Instrumentos Texas
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
187 A
Rds On - Resistencia de la fuente de drenaje:
3.6 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.2 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
78 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
300 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
NexFET
Embalaje:
Tubo
Altura:
16.51 mm
Longitud:
10.67 mm
Serie:
CSD19535KCS
Tipo de transistor:
1 N-Channel
Ancho:
4.7 mm
Marca:
Instrumentos Texas
Transconductancia directa - Mín .:
274 S
Otoño:
5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
60 ns
Tiempo típico de retardo de encendido:
32 ns
Unidad de peso:
0.211644 oz
Tags
CSD19535, CSD1953, CSD19, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
100V, N ch NexFET MOSFET™, single TO-220, 3.6mOhm 3-TO-220 -55 to 175
***Components
In a Pack of 2, CSD19535KCS N-Channel MOSFET, 187 A, 100 V NexFET, 3-Pin TO-220 Texas Instruments
***ical
Trans MOSFET N-CH Si 100V 150A 3-Pin(3+Tab) TO-220 Tube
***p One Stop Global
Trans MOSFET N-CH 100V 150A 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans MOSFET N-CH 100V 150A 3-Pin TO-220
***ark
Mosfet, N Channel, 100V, 150A, To-220-3
***i-Key
MOSFET N-CH 100V TO-220
***ment14 APAC
Prices include import duty and tax. MOSFET, N CHANNEL, 100V, 150A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:300W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 100V, 150A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:150A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0031ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.7V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***NS
This 100 V, 3.1 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Parte # Descripción Valores Precio
CSD19535KCS
DISTI # 296-37288-5-ND
MOSFET N-CH 100V TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
6202In Stock
  • 2500:$1.6020
  • 1000:$1.6863
  • 500:$1.9995
  • 100:$2.4692
  • 50:$2.7102
  • 10:$3.0110
  • 1:$3.3700
CSD19535KCS
DISTI # CSD19535KCS
Trans MOSFET N-CH 100V 150A 3-Pin TO-220 (Alt: CSD19535KCS)
RoHS: Compliant
Min Qty: 1
Europe - 350
  • 1:€3.7392
  • 10:€2.6562
  • 100:€2.3028
  • 250:€2.1774
  • 500:€1.5960
CSD19535KCS
DISTI # CSD19535KCS
Trans MOSFET N-CH 100V 150A 3-Pin TO-220 (Alt: CSD19535KCS)
RoHS: Compliant
Min Qty: 1000
Asia - 0
    CSD19535KCS
    DISTI # CSD19535KCS
    Trans MOSFET N-CH 100V 150A 3-Pin TO-220 - Rail/Tube (Alt: CSD19535KCS)
    RoHS: Compliant
    Min Qty: 250
    Container: Tube
    Americas - 0
    • 250:$1.4900
    • 350:$1.4900
    • 600:$1.3900
    • 1250:$1.3900
    • 2500:$1.2900
    CSD19535KCS100V, N-Channel NexFET&#153,Power MOSFET4809
    • 1000:$1.2400
    • 750:$1.3000
    • 500:$1.5400
    • 250:$1.8200
    • 100:$1.9400
    • 25:$2.2100
    • 10:$2.3800
    • 1:$2.6400
    CSD19535KCS
    DISTI # 595-CSD19535KCS
    MOSFET 100V N-CH NexFET Pwr MOSFET
    RoHS: Compliant
    1356
    • 1:$2.9000
    • 10:$2.6100
    • 100:$2.1300
    • 250:$2.0000
    • 500:$1.8100
    • 1000:$1.5300
    CSD19535KCSPower Field-Effect Transistor, 150A I(D), 100V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
    RoHS: Compliant
    109087
    • 1000:$1.6200
    • 500:$1.7000
    • 100:$1.7700
    • 25:$1.8500
    • 1:$1.9900
    CSD19535KCS
    DISTI # 8274915P
    MOSFET N-CHANNEL 100V 150A NEXFET TO-220, TU24
    • 50:£1.8900
    • 100:£1.5500
    • 250:£1.4600
    • 500:£1.3150
    CSD19535KCS
    DISTI # CSD19535KCS
    Transistor: N-MOSFET,unipolar,100V,150A,300W,TO220-334
    • 1:$3.3400
    • 3:$3.0100
    • 10:$2.6600
    • 50:$2.3900
    • 250:$2.2300
    CSD19535KCS.
    DISTI # 2413259
    MOSFET, N-CH, 100V, 150A, TO-220-3
    RoHS: Compliant
    0
    • 250:£2.2400
    CSD19535KCS
    DISTI # 2419497
    MOSFET, N CHANNEL, 100V, 150A, TO-220-3
    RoHS: Compliant
    0
    • 1:$4.5900
    • 10:$4.1300
    • 100:$3.3900
    • 250:$3.1900
    • 500:$2.8800
    • 1000:$2.4400
    CSD19535KCS.
    DISTI # 2413259
    MOSFET, N-CH, 100V, 150A, TO-220-3
    RoHS: Compliant
    0
    • 1:$4.3200
    • 10:$3.7800
    • 25:$3.2900
    • 100:$3.0200
    • 250:$2.7000
    • 500:$2.4400
    • 1000:$2.2600
    • 2500:$2.1900
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    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de CSD19535KCS es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,90 US$
    2,90 US$
    10
    2,61 US$
    26,10 US$
    100
    2,13 US$
    213,00 US$
    250
    2,00 US$
    500,00 US$
    500
    1,81 US$
    905,00 US$
    1000
    1,53 US$
    1 530,00 US$
    2500
    1,45 US$
    3 625,00 US$
    5000
    1,40 US$
    7 000,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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