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IPC014N03L3X1SA1

IPC014N03L3X1SA1
Mfr. #:
IPC014N03L3X1SA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 30V 2A SAWN ON FOIL
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPC014N03L3X1SA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
IPC014, IPC01, IPC0, IPC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V DIE Wafer
***i-Key
MOSFET N-CH 30V 2A SAWN ON FOIL
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs. OptiMOS 30V products are tailored to the needs of power management in notebook by improved EMI behavior as increased battery life. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance due to lowest figure of merits R on x Q g and R on x Q gd; Low gate resistance; Excellent 5V gate drive performance; Optimized EMI behavior based on an integrated damping network; Super barrier diode may improved efficiency by upwards of 2%. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Highest efficiency; Smallest footprint and highest power density with S3O8 & CanPAK; Easy to design-in; Can be driven from 5V system rail giving excellent performance | Target Applications: On board power for server; Power management for mobile computing; Synchronous rectification; High power density point of load converters
Parte # Mfg. Descripción Valores Precio
IPC014N03L3X1SA1
DISTI # IPC014N03L3X1SA1-ND		Infineon Technologies AGMOSFET N-CH 30V 2A SAWN ON FOIL
RoHS: Compliant
Min Qty: 103445
Container: Bulk		Temporarily Out of Stock
  • 103445:$0.1393
IPC014N03L3X1SA1
DISTI # IPC014N03L3X1SA1		Infineon Technologies AGTrans MOSFET N-CH 30V DIE Wafer - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IPC014N03L3X1SA1)
RoHS: Compliant
Min Qty: 103445
Container: Waffle Pack		Americas - 0
  • 1034450:$0.1329
  • 517225:$0.1349
  • 310335:$0.1399
  • 206890:$0.1449
  • 103445:$0.1499
IPC014N03L3X1SA1
DISTI # SP000454346		Infineon Technologies AGTrans MOSFET N-CH 30V DIE Wafer (Alt: SP000454346)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.1379
  • 500:€0.1409
  • 100:€0.1449
  • 50:€0.1489
  • 25:€0.1649
  • 10:€0.1859
  • 1:€0.2189
Imagen Parte # Descripción
IPC014N03L3X1SA1

Mfr.#: IPC014N03L3X1SA1

OMO.#: OMO-IPC014N03L3X1SA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 2A SAWN ON FOIL
IPC014N03L3

Mfr.#: IPC014N03L3

OMO.#: OMO-IPC014N03L3-126

 IGBT Transistors MOSFET N-KANAL POWER MOS
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de IPC014N03L3X1SA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,20 US$
0,20 US$
10
0,19 US$
1,89 US$
100
0,18 US$
17,94 US$
500
0,17 US$
84,70 US$
1000
0,16 US$
159,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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