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IPD60R385CPATMA1

IPD60R385CPATMA1
Mfr. #:
IPD60R385CPATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 600V 9A DPAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD60R385CPATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
9 A
Rds On - Resistencia de la fuente de drenaje:
350 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
22 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
83 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Serie:
CoolMOS CE
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
Infineon Technologies
Otoño:
5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
5 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
40 ns
Tiempo típico de retardo de encendido:
10 ns
Parte # Alias:
IPD60R385CP SP000680638
Unidad de peso:
0.139332 oz
Tags
IPD60R385, IPD60R38, IPD60R3, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R / CoolMOS Power Transistor
*** Stop Electro
Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:650V; On Resistance Rds(on):385mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9A; Package / Case:TO-252; Power Dissipation Pd:83W; Pulse Current Idm:27A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 650 V 380 mOhm 32 nC CoolMOS™ Power Mosfet - TO-252-3
*** Stop Electro
Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ment14 APAC
MOSFET,N CH,600V,10.6A,TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.6A; Power Dissipation Pd:83W; Voltage Vgs Max:30V
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ark
MOSFET Transistor, N Channel, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V
***ure Electronics
N-Channel 6000 V 380 mOhm 19 nC CoolMOS™ P6 Power Transistor - DPAK-3
***el Electronic
0402 10 nF 50V ±10% Tolerance X7R Surface Mount Multilayer Ceramic Capacitor
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO252-3, RoHS
***nell
MOSFET, N-CH, 600V, 10.6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.342ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***ical
Trans MOSFET N-CH 600V 9.1A 3-Pin(2+Tab) DPAK T/R
***et
Trans MOSFET N-CH 650V 9.1A 3-Pin TO-252 T/R
***i-Key Marketplace
COOLMOS N-CHANNEL POWER MOSFET
***icroelectronics
N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package
***ark
MOSFET, N-CH, 600V, 11A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 600V, 11A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***icroelectronics
N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package
***ure Electronics
N-Channel 500 V 380 mOhm Surface Mount FDmesh™ II Power Mosfet - TO-252
***r Electronics
Power Field-Effect Transistor, 11A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
MOSFET, N-CH, 500V, 11A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 500V, 11A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.29ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 100W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***icroelectronics
N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
***ark
Mosfet, N-Ch, 650V, 11A, To-252 Rohs Compliant: Yes
***el Electronic
Cap Ceramic 0.047uF 500V X7R 20% SMD 1812 125C Embossed T/R
***icroelectronics SCT
Power MOSFETs, 650V, 11A, DPAK, Tape and Reel
***enic
650V 11A 320m´Î@10V5.5A 110W 3V@250uA 1.1pF@100V N Channel 718pF@100V 19.5nC@10V -55¡Í~+150¡Í@(Tj) DPAK MOSFETs ROHS
Parte # Mfg. Descripción Valores Precio
IPD60R385CPATMA1
DISTI # IPD60R385CPATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 600V 9A TO-252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1185In Stock
  • 1000:$1.2311
  • 500:$1.4859
  • 100:$1.9104
  • 10:$2.3770
  • 1:$2.6300
IPD60R385CPATMA1
DISTI # IPD60R385CPATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 600V 9A TO-252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1185In Stock
  • 1000:$1.2311
  • 500:$1.4859
  • 100:$1.9104
  • 10:$2.3770
  • 1:$2.6300
IPD60R385CPATMA1
DISTI # IPD60R385CPATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 9A TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$1.1129
IPD60R385CPATMA1
DISTI # IPD60R385CPATMA1		Infineon Technologies AGTrans MOSFET N-CH 600V 9A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R385CPATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$1.0789
  • 5000:$1.0399
  • 10000:$1.0029
  • 15000:$0.9689
  • 25000:$0.9519
IPD60R385CPATMA1
DISTI # IPD60R385CPATMA1		Infineon Technologies AGTrans MOSFET N-CH 600V 9A 3-Pin TO-252 T/R (Alt: IPD60R385CPATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    IPD60R385CPATMA1
    DISTI # SP000680638    		Infineon Technologies AGTrans MOSFET N-CH 600V 9A 3-Pin TO-252 T/R (Alt: SP000680638)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 2500:€1.3859
    • 5000:€1.0769
    • 10000:€0.9999
    • 15000:€0.9679
    • 25000:€0.9309
    IPD60R385CPATMA1
    DISTI # 33P7143    		Infineon Technologies AGMOSFET, N CHANNEL, 650V, 9A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.35ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
      IPD60R385CPATMA1
      DISTI # 726-IPD60R385CPATMA1      		Infineon Technologies AGMOSFET N-Ch 600V 9A DPAK-2
      RoHS: Compliant      		14502
      • 1:$2.2000
      • 10:$1.8700
      • 100:$1.4900
      • 500:$1.3100
      • 1000:$1.0800
      • 2500:$1.0100
      • 5000:$0.9750
      IPD60R385CPATMA1
      DISTI # 1664027RL      		Infineon Technologies AGMOSFET, N, TO-252
      RoHS: Compliant      		0
      • 5000:$1.5500
      • 2500:$1.5700
      • 1000:$1.6900
      • 500:$1.9100
      • 100:$2.1400
      • 10:$2.6400
      • 1:$3.2000
      IPD60R385CPATMA1
      DISTI # 1664027      		Infineon Technologies AGMOSFET, N, TO-252
      RoHS: Compliant      		0
      • 5000:$1.5500
      • 2500:$1.5700
      • 1000:$1.6900
      • 500:$1.9100
      • 100:$2.1400
      • 10:$2.6400
      • 1:$3.2000
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      Disponibilidad
      Valores:
      Available
      En orden:
      1987
      Ingrese la cantidad:
      El precio actual de IPD60R385CPATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      2,20 US$
      2,20 US$
      10
      1,87 US$
      18,70 US$
      100
      1,49 US$
      149,00 US$
      500
      1,31 US$
      655,00 US$
      1000
      1,08 US$
      1 080,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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