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STF35N60DM2

STF35N60DM2
Mfr. #:
STF35N60DM2
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-220FP package
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STF35N60DM2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STF35N60DM2 más información STF35N60DM2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220FP-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
28 A
Rds On - Resistencia de la fuente de drenaje:
110 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
25 V
Qg - Carga de puerta:
54 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
40 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
MDmesh
Embalaje:
Tubo
Serie:
STF35N60DM2
Marca:
STMicroelectronics
Otoño:
10.7 ns
Tipo de producto:
MOSFET
Hora de levantarse:
17 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
68 ns
Tiempo típico de retardo de encendido:
21.2 ns
Unidad de peso:
0.081130 oz
Tags
STF35N, STF35, STF3, STF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-220FP package
***ure Electronics
N-Channel 600 V 110 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N-CH, 600V, 28A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.094ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Po
***icroelectronics
N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220FP package
***ical
Trans MOSFET N-CH 600V 34A 3-Pin(3+Tab) TO-220FP Tube
***ment14 APAC
MOSFET, N-CH, 600V, 34A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Source Voltage Vds:600V; On Resistance
***nell
MOSFET, N-CH, 600V, 34A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 34A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 40W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***ark
N-CH 650V 33A EF Series Power MOSFET with Fast Body Diode in TO-220
***ure Electronics
Single N-Channel 600 V 0.098 Ohm 155 nC 278 W Silicon Mosfet - TO-220-3
*** Electronics
VISHAY SIHP33N60EF-GE3 MOSFET, N CHANNEL, 600V, 33A, TO-220AB-3
***nell
MOSFET, N CH, 600V, 33A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 278W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -
***ark
Mosfet Transistor, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package
*** Source Electronics
MOSFET N-CH 600V 21A TO-220FP / Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-220FP Tube
***ponent Stockers USA
21 A 600 V 0.16 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 600V, 21A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 40W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***ical
Trans MOSFET N-CH 600V 34A Automotive 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package
***el Electronic
IC FRAMER ENHANCED T1 4X 128TQFP
***ure Electronics
Single N-Channel 600 V 125 mOhm 56 nC CoolMOS™ Power Mosfet - TO-220-3FP
***et
Transistor MOSFET N-Channel 600V 30A 3-Pin TO-220FP Tube
***ark
Mosfet, N-Ch, 600V, 30A, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.113Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Infineon IPA60R125P6XKSA1
*** Stop Electro
Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***ical
Trans MOSFET N-CH Si 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak
***el Electronic
VISHAY SIHA22N60E-E3 MOSFET, N CHANNEL, 600V, 21A, TO-220F
***et
E SERIES HIGH VOLTAGE THIN-LEAD TO-220 FULLPAK 9 POWER MOSFE
***id Electronics
Power Field-Effect Transistor 8A I(D) 600V
***ark
MOSFET, N CHANNEL, 600V, 21A, TO-220F; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MDmesh DM2 Power MOSFETs
STMicroelectronics MDmesh DM2 series are ST's latest fast recovery diode series of 600V power MOSFETs optimized for ZVS phase-shift bridge topologies. They feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descripción Valores Precio
STF35N60DM2
DISTI # V99:2348_17754058		STMicroelectronicsTrans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		158
  • 1000:$2.3270
  • 500:$2.8920
  • 250:$3.2190
  • 100:$3.3970
  • 10:$3.8720
  • 1:$5.0567
STF35N60DM2
DISTI # 497-16358-5-ND		STMicroelectronicsMOSFET N-CH 600V 28A
RoHS: Compliant
Min Qty: 1
Container: Tube		1160In Stock
  • 2500:$2.4439
  • 500:$3.0503
  • 100:$3.5831
  • 50:$4.1344
  • 10:$4.3730
  • 1:$4.8700
STF35N60DM2
DISTI # 25959734		STMicroelectronicsTrans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		158
  • 3:$5.0567
STF35N60DM2
DISTI # STF35N60DM2		STMicroelectronicsMOS Power Transistors HV (>= 200V) - Bulk (Alt: STF35N60DM2)
RoHS: Compliant
Min Qty: 1000
Container: Bulk		Americas - 0
  • 5000:$2.1900
  • 10000:$2.1900
  • 3000:$2.2900
  • 2000:$2.4900
  • 1000:$2.5900
STF35N60DM2
DISTI # STF35N60DM2		STMicroelectronicsMOS Power Transistors HV (>= 200V) (Alt: STF35N60DM2)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.9900
  • 100:€2.1900
  • 500:€2.1900
  • 50:€2.2900
  • 25:€2.3900
  • 10:€2.4900
  • 1:€2.7900
STF35N60DM2
DISTI # 84Y8594		STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$2.1900
STF35N60DM2
DISTI # 511-STF35N60DM2		STMicroelectronicsMOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-220FP package
RoHS: Compliant		591
  • 1:$4.6300
  • 10:$3.9300
  • 100:$3.4100
  • 250:$3.2300
  • 500:$2.9000
  • 1000:$2.4500
  • 2000:$2.3200
STF35N60DM2
DISTI # 1116464P		STMicroelectronicsMOSFET N-CH 600V 28A MDMESH DM2 TO-220FP, TU128
  • 1000:£1.7750
  • 500:£2.1050
  • 100:£2.4700
  • 10:£2.8500
STF35N60DM2
DISTI # STF35N60DM2		STMicroelectronicsTransistor: N-MOSFET,unipolar,600V,17A,40W,TO220FP40
  • 50:$3.4700
  • 10:$3.8600
  • 3:$4.8000
  • 1:$5.5900
STF35N60DM2
DISTI # 2531107		STMicroelectronicsMOSFET, N-CH, 600V, 28A, TO-220FP
RoHS: Compliant		4
  • 500:£2.2100
  • 250:£2.4600
  • 100:£2.6000
  • 10:£3.0000
  • 1:£3.9400
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RC0603FR-07402KL

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Disponibilidad
Valores:
591
En orden:
2574
Ingrese la cantidad:
El precio actual de STF35N60DM2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
4,63 US$
4,63 US$
10
3,93 US$
39,30 US$
100
3,41 US$
341,00 US$
250
3,23 US$
807,50 US$
500
2,90 US$
1 450,00 US$
1000
2,45 US$
2 450,00 US$
2000
2,32 US$
4 640,00 US$
5000
2,24 US$
11 200,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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