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IPG20N06S2L50AATMA1

IPG20N06S2L50AATMA1
Mfr. #:
IPG20N06S2L50AATMA1
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET N-Ch 55V 20A TDSON-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPG20N06S2L50AATMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
FET: matrices
Serie
Automotive, AEC-Q101, OptiMOS
embalaje
Tape & Reel (TR)
Alias ​​de parte
IPG20N06S2L-50A SP001023842
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-PowerVDFN
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 175°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
PG-TDSON-8-10
Configuración
Doble
Tipo FET
2 N-Channel (Dual)
Potencia máxima
51W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
55V
Entrada-Capacitancia-Ciss-Vds
560pF @ 25V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
20A
Rds-On-Max-Id-Vgs
50 mOhm @ 15A, 10V
Vgs-th-Max-Id
2V @ 19μA
Puerta-Carga-Qg-Vgs
17nC @ 10V
Disipación de potencia Pd
51 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
10 ns
Hora de levantarse
3 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
20 A
Vds-Drain-Source-Breakdown-Voltage
55 V
Vgs-th-Gate-Source-Threshold-Voltage
1.6 V
Resistencia a la fuente de desagüe de Rds
50 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
15 ns
Tiempo de retardo de encendido típico
2 ns
Qg-Gate-Charge
13 nC
Modo de canal
Mejora
Tags
IPG20N06S2, IPG20N06, IPG20N0, IPG20, IPG2, IPG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
55V, Dual N-Ch, 50 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™, PG-TDSON-8, RoHS
***ical
Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R
***ineon
Summary of Features: Dual N-channel Logic Level - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested; Feasible for automatic optical inspection (AOI) | Benefits: Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.; Bond wire is 200um for up to 20A current; Larger source lead frame connection for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes | Target Applications: Direct Fuel Injection; ABS Valves; Solenoid control; Load Switches; LED and Body lighting
Parte # Mfg. Descripción Valores Precio
IPG20N06S2L50AATMA1
DISTI # IPG20N06S2L50AATMA1-ND		Infineon Technologies AGMOSFET 2N-CH 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.6169
IPG20N06S2L50AATMA1
DISTI # IPG20N06S2L50AATMA1		Infineon Technologies AGTrans MOSFET N-CH 55V 20A 8-Pin TDSON T/R - Tape and Reel (Alt: IPG20N06S2L50AATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.6069
  • 10000:$0.5849
  • 20000:$0.5639
  • 30000:$0.5449
  • 50000:$0.5349
IPG20N06S2L50AATMA1
DISTI # SP001023842		Infineon Technologies AGTrans MOSFET N-CH 55V 20A 8-Pin TDSON T/R (Alt: SP001023842)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.9489
  • 10000:€0.7959
  • 20000:€0.6649
  • 30000:€0.5789
  • 50000:€0.5429
IPG20N06S2L50AATMA1
DISTI # 726-IPG20N06S2L50AAT		Infineon Technologies AGMOSFET N-Ch 55V 20A TDSON-8
RoHS: Compliant		0
  • 1:$1.3800
  • 10:$1.1800
  • 100:$0.9070
  • 500:$0.8020
  • 1000:$0.6330
  • 5000:$0.5610
  • 10000:$0.5400
Imagen Parte # Descripción
IPG20N06S4L-11

Mfr.#: IPG20N06S4L-11

OMO.#: OMO-IPG20N06S4L-11

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IPG20N06S2L35AATMA1

Mfr.#: IPG20N06S2L35AATMA1

OMO.#: OMO-IPG20N06S2L35AATMA1

 MOSFET MOSFET
IPG20N06S2L50AATMA1

Mfr.#: IPG20N06S2L50AATMA1

OMO.#: OMO-IPG20N06S2L50AATMA1

 MOSFET N-Ch 55V 20A TDSON-8
IPG20N06S4L14ATMA2

Mfr.#: IPG20N06S4L14ATMA2

OMO.#: OMO-IPG20N06S4L14ATMA2-INFINEON-TECHNOLOGIES

 MOSFET 2N-CH 8TDSON
IPG20N06S4L26AATMA1-CUT TAPE

Mfr.#: IPG20N06S4L26AATMA1-CUT TAPE

OMO.#: OMO-IPG20N06S4L26AATMA1-CUT-TAPE-1190

 Nuevo y original
IPG20N06S2L-35

Mfr.#: IPG20N06S2L-35

OMO.#: OMO-IPG20N06S2L-35-1190

 MOSFET N-Ch 55V 20A TDSON-8 OptiMOS
IPG20N06S2L65ATMA

Mfr.#: IPG20N06S2L65ATMA

OMO.#: OMO-IPG20N06S2L65ATMA-1190

 Nuevo y original
IPG20N06S3L-35

Mfr.#: IPG20N06S3L-35

OMO.#: OMO-IPG20N06S3L-35-INFINEON-TECHNOLOGIES

 MOSFET 2N-CH 55V 20A TDSON-8
IPG20N06S415ATMA1

Mfr.#: IPG20N06S415ATMA1

OMO.#: OMO-IPG20N06S415ATMA1-INFINEON-TECHNOLOGIES

 MOSFET 2N-CH 8TDSON
IPG20N06S4-15

Mfr.#: IPG20N06S4-15

OMO.#: OMO-IPG20N06S4-15-126

 IGBT Transistors MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de IPG20N06S2L50AATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,80 US$
0,80 US$
10
0,76 US$
7,62 US$
100
0,72 US$
72,21 US$
500
0,68 US$
341,00 US$
1000
0,64 US$
641,90 US$
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