IRFP3006PBF

IRFP3006PBF
Mfr. #:
IRFP3006PBF
Fabricante:
Infineon / IR
Descripción:
MOSFET MOSFET N-CH 60V 257A TO247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFP3006PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFP3006PBF DatasheetIRFP3006PBF Datasheet (P4-P6)IRFP3006PBF Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
195 A
Rds On - Resistencia de la fuente de drenaje:
2.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Qg - Carga de puerta:
300 nC
Pd - Disipación de energía:
375 W
Configuración:
Único
Embalaje:
Tubo
Altura:
20.7 mm
Longitud:
15.87 mm
Tipo de transistor:
1 N-Channel
Ancho:
5.31 mm
Marca:
Infineon / IR
Transconductancia directa - Mín .:
280 S
Otoño:
189 ns
Tipo de producto:
MOSFET
Hora de levantarse:
182 ns
Cantidad de paquete de fábrica:
400
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
118 ns
Tiempo típico de retardo de encendido:
16 ns
Parte # Alias:
SP001556714
Unidad de peso:
1.340411 oz
Tags
IRFP3006P, IRFP300, IRFP30, IRFP3, IRFP, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 2.5 mOhm 200 nC HEXFET® Power Mosfet - TO-247-3AC
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ineon
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 270 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 2.5 / Gate-Source Voltage V = 20 / Fall Time ns = 189 / Rise Time ns = 182 / Turn-OFF Delay Time ns = 118 / Turn-ON Delay Time ns = 16 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247AC / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 375
***(Formerly Allied Electronics)
IRFP3206PBF N-channel MOSFET Transistor, 200 A, 60 V, 3-Pin TO-247AC
*** Source Electronics
Trans MOSFET N-CH Si 60V 200A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 60V 120A TO-247AC
***ure Electronics
Single N-Channel 60 V 3 mOhm 120 nC HEXFET® Power Mosfet - TO-247-3AC
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ment14 APAC
MOSFET, N, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:200A; Package / Case:TO-247AC; Power Dissipation Pd:280W; Pulse Current Idm:840A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-247AC package, TO247-3, RoHS
***ure Electronics
Single N-Channel 60 V 2 mOhm 274 nC HEXFET® Power Mosfet - TO-247-3
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***(Formerly Allied Electronics)
IRFP4368PBF N-channel MOSFET Transistor, 350 A, 75 V, 3-Pin TO-247AC
***ure Electronics
Single N-Channel 75 V 1.85 mOhm 570 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***roFlash
Power Field-Effect Transistor, 195A I(D), 75V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, 75V 350A TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:350A; Drain Source Voltage Vds:75V; On Resistance Rds(on):1.46mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:520W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:350A; Package / Case:TO-247AC; Power Dissipation Pd:520W; Pulse Current Idm:1280A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 60 V 0.009 Ohms Flange Mount Power Mosfet - TO-247
***nell
N CHANNEL MOSFET, 60V, 70A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 9mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs Typ: 4V
*** Stop Electro
Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ure Electronics
Single N-Channel 60 V 0.018 Ohms Flange Mount Power Mosfet - TO-247
*** Stop Electro
Power Field-Effect Transistor, 70A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:60V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:190W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:70A; Package / Case:TO-247AC; Power Dissipation Pd:190W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***-Wing Technology
Tube Through Hole N-Channel Single Mosfet Transistor 70A Tc 70A 190W 250ns
***ical
Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-247AC
***nell
MOSFET, N, 60V, 70A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Junction to Case Thermal Resistance A: 0.8°C/W; On State resistance @ Vgs = 10V: 18ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 290A; Voltage Vds Typ: 60V; Voltage Vgs Rds on Measurement: 10V
Parte # Mfg. Descripción Valores Precio
IRFP3006PBF
DISTI # V99:2348_13892441
Infineon Technologies AGTrans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant
79
  • 500:$2.4830
  • 250:$2.7590
  • 100:$3.0660
  • 50:$3.4060
  • 25:$3.7850
  • 10:$4.2050
  • 1:$5.2349
IRFP3006PBF
DISTI # V36:1790_13892441
Infineon Technologies AGTrans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-247AC Tube
RoHS: Compliant
0
    IRFP3006PBF
    DISTI # IRFP3006PBF-ND
    Infineon Technologies AGMOSFET N-CH 60V 257A TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    894In Stock
    • 2800:$3.1548
    • 800:$3.9376
    • 400:$4.3883
    • 25:$5.3372
    • 10:$5.6450
    • 1:$6.2900
    IRFP3006PBF
    DISTI # 26761200
    Infineon Technologies AGTrans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-247AC Tube
    RoHS: Compliant
    1200
    • 500:$3.5442
    • 250:$3.9501
    • 100:$4.1580
    • 10:$4.8015
    • 5:$5.6430
    IRFP3006PBF
    DISTI # 26198388
    Infineon Technologies AGTrans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-247AC Tube
    RoHS: Compliant
    79
    • 500:$2.4830
    • 250:$2.7590
    • 100:$3.0660
    • 50:$3.4060
    • 25:$3.7850
    • 10:$4.2050
    • 3:$4.7590
    IRFP3006PBF
    DISTI # IRFP3006PBF
    Infineon Technologies AGTrans MOSFET N-CH 60V 270A 3-Pin TO-247AC Tube - Rail/Tube (Alt: IRFP3006PBF)
    RoHS: Compliant
    Min Qty: 1200
    Container: Tube
    Americas - 0
    • 12000:$2.0900
    • 6000:$2.1900
    • 2400:$2.2900
    • 3600:$2.2900
    • 1200:$2.3900
    IRFP3006PBF
    DISTI # IRFP3006PBF
    Infineon Technologies AGTrans MOSFET N-CH 60V 270A 3-Pin TO-247AC Tube - Bulk (Alt: IRFP3006PBF)
    Min Qty: 155
    Container: Bulk
    Americas - 0
    • 1550:$1.9900
    • 465:$2.0900
    • 775:$2.0900
    • 310:$2.1900
    • 155:$2.2900
    IRFP3006PBF
    DISTI # SP001556714
    Infineon Technologies AGTrans MOSFET N-CH 60V 270A 3-Pin TO-247AC Tube (Alt: SP001556714)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1000:€2.4800
    • 500:€3.1000
    • 250:€3.4500
    • 100:€3.6400
    • 10:€4.2000
    • 1:€4.9400
    IRFP3006PBF
    DISTI # 31Y2066
    Infineon Technologies AGMOSFET Transistor, N Channel, 195 A, 60 V, 0.0021 ohm, 10 V, 4 V RoHS Compliant: Yes293
    • 500:$3.9100
    • 250:$4.3000
    • 100:$4.5100
    • 50:$4.7200
    • 25:$4.9200
    • 10:$5.1300
    • 1:$5.9400
    IRFP3006PBF
    DISTI # 70394769
    Infineon Technologies AGIRFP3006PBF N-channel MOSFET Transistor,270 A,60 V,3-Pin TO-247
    RoHS: Compliant
    19
    • 1:$6.8100
    • 10:$6.0100
    • 100:$5.2400
    • 500:$4.5400
    • 1000:$4.0000
    IRFP3006PBF
    DISTI # 942-IRFP3006PBF
    Infineon Technologies AGMOSFET MOSFET N-CH 60V 257A TO247
    RoHS: Compliant
    412
    • 1:$5.7000
    • 10:$4.8500
    • 100:$4.2000
    • 250:$3.9900
    • 500:$3.5800
    IRFP3006PBFInternational RectifierPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
    RoHS: Compliant
    2515
    • 1000:$2.1300
    • 500:$2.2400
    • 100:$2.3400
    • 25:$2.4400
    • 1:$2.6200
    IRFP3006PBF
    DISTI # 8793321
    Infineon Technologies AGMOSFET IRFP3006PBF, PK102
    • 20:£1.8900
    • 2:£1.9400
    IRFP3006PBF
    DISTI # 8793321P
    Infineon Technologies AGMOSFET IRFP3006PBF, TU758
    • 20:£1.8900
    IRFP3006PBF
    DISTI # IRFP3006PBF
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,195A,375W,TO247AC19
    • 1:$5.5800
    • 3:$5.1100
    • 10:$4.1900
    • 100:$3.6300
    IRFP3006PBF
    DISTI # 2456721
    Infineon Technologies AGMOSFET, N-CH, 60V, 195A, TO-247AC-3
    RoHS: Compliant
    293
    • 500:$5.5100
    • 250:$6.1400
    • 100:$6.4600
    • 10:$7.4600
    • 1:$8.7700
    IRFP3006PBF
    DISTI # 2456721
    Infineon Technologies AGMOSFET, N-CH, 60V, 195A, TO-247AC-3308
    • 500:£2.7600
    • 250:£3.1600
    • 100:£3.3400
    • 10:£3.8500
    • 1:£5.0200
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    Valores:
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    En orden:
    2395
    Ingrese la cantidad:
    El precio actual de IRFP3006PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    5,70 US$
    5,70 US$
    10
    4,85 US$
    48,50 US$
    100
    4,20 US$
    420,00 US$
    250
    3,99 US$
    997,50 US$
    500
    3,58 US$
    1 790,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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