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SI4413CDY-T1-GE3

SI4413CDY-T1-GE3
Mfr. #:
SI4413CDY-T1-GE3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 30V 15A 3.0W 7.5mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4413CDY-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SI4413CDY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
embalaje
Carrete
Alias ​​de parte
SI4413CDY-GE3
Unidad de peso
0.017870 oz
Paquete-Estuche
SO-8
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 P-Channel
Disipación de potencia Pd
3 W
Id-corriente-de-drenaje-continua
9 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
9.5 mOhms
Polaridad del transistor
P-Channel
Tags
SI4413C, SI4413, SI441, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
MOSFET P-CH 30V 8-SOIC
***et
P-CHANNEL 30-V (D-S) MOSFET
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-15000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.011ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-3V; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4413CDY-T1-GE3
DISTI # SI4413CDY-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.8613
SI4413CDY-T1-GE3
DISTI # SI4413CDY-T1-GE3		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4413CDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.8439
  • 5000:$0.8189
  • 10000:$0.7849
  • 15000:$0.7639
  • 25000:$0.7429
SI4413CDY-T1-GE3
DISTI # 781-SI4413CDY-T1-GE3		Vishay IntertechnologiesMOSFET 30V 15A 3.0W 7.5mohm @ 10V
RoHS: Compliant		0
  • 2500:$0.7840
  • 5000:$0.7550
  • 10000:$0.7250
Imagen Parte # Descripción
SI4413CDY-T1-GE3

Mfr.#: SI4413CDY-T1-GE3

OMO.#: OMO-SI4413CDY-T1-GE3

 MOSFET 30V 15A 3.0W 7.5mohm @ 10V
SI4413CDY-T1-GE3

Mfr.#: SI4413CDY-T1-GE3

OMO.#: OMO-SI4413CDY-T1-GE3-VISHAY

 RF Bipolar Transistors MOSFET 30V 15A 3.0W 7.5mohm @ 10V
SI4413CDY-T1-E3

Mfr.#: SI4413CDY-T1-E3

OMO.#: OMO-SI4413CDY-T1-E3-1190

 Nuevo y original
SI4413CDY-T1-G

Mfr.#: SI4413CDY-T1-G

OMO.#: OMO-SI4413CDY-T1-G-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de SI4413CDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,09 US$
1,09 US$
10
1,03 US$
10,33 US$
100
0,98 US$
97,88 US$
500
0,92 US$
462,20 US$
1000
0,87 US$
870,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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