2N5116UB

2N5116UB
Mfr. #:
2N5116UB
Fabricante:
Microchip / Microsemi
Descripción:
Trans JFET P-CH 30V 3-Pin UB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
2N5116UB Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
2N5116, 2N511, 2N51, 2N5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET
***ical
Trans JFET P-CH 30V 4-Pin Case UB
***ark
JFET ROHS COMPLIANT: YES
***i-Key
P CHANNEL JFET
***ure Electronics
MMBFJ270 Series 30 V 15 mA Surface Mount P-Channel Switch - SOT-23
***ment14 APAC
P CHANNEL JFET, 30V, SOT-23; Transistor; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Zero Gate Drain
***et Europe
Trans JFET P-CH 3-Pin SOT-23 T/R
***r Electronics
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***DA Technology Co., Ltd.
Product Description Demo for Development.
*** Source Electronics
JFET P-CH 30V 0.225W SOT23 / Trans JFET P-CH 3-Pin SOT-23 T/R
***ure Electronics
MMBFJ175 Series 30 V 60 mA Surface Mount P-Channel Switch - SOT-23
***rchild Semiconductor
P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88.
***ure Electronics
MMBFJ177 Series 30 V 20 mA Surface Mount P-Channel Switch - SOT-23
***rchild Semiconductor
P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88.
***ment14 APAC
TRANSISTOR, JFET, P, SMD, SOT-23; Transistor Type:JFET; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss:-1.5mA to -20mA; Gate-Source Cutoff Voltage Vgs(off) Max:2.5V; Power Dissipation Pd:225mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Idss Max:20mA; Current Idss Min:1.5mA; Package / Case:SOT-23; Power Dissipation Pd:225mW; Power Dissipation Ptot Max:225mW; Termination Type:SMD; Transistor Polarity:P Channel
***ark
Jfet Transistor, Junction Field Effect, Jfet, 30 V, 7 Ma, 70 Ma, 6 V, Sot-23 Rohs Compliant: Yes
***th Star Micro
Transistor JFET P-CH 30V 70mA 3-Pin TO-236AB T/R
***ponent Stockers USA
30 V P-CHANNEL Si SMALL SIGNAL JFET
*** Americas
STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'
*** Services
CoC and 2-years warranty / RFQ for pricing
***hardson RFPD
RF SMALL SIGNAL TRANSISTOR MOSFET
***nell
JFET,P CH,30V,0.03A,SOT23; Breakdown Voltage Vbr: 30V; Zero Gate Voltage Drain Current Idss Min: 7mA; Zero Gate Voltage Drain Current Idss Max: 70mA; Gate-Source Cutoff Voltage Vgs(off) Max: 6V; Transistor Case Style: SOT-23; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id: 70mA; No. of Pins: 3Pins; On Resistance Rds(on): 125ohm; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Pd: 300mW; Termination Type: Surface Mount Device; Transistor Polarity: P Channel; Voltage Vds Typ: 30V; Zero Gate Voltage Drain Current Idss: 7mA to 70mA
***el Electronic
VISHAY SST174-E3 JFET Transistor, JFET, 30 V, -20 mA, -135 mA, 10 V, TO-236, JFET
***nell
JFET; Transistor Polarity:Dual P Channel
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ment14 APAC
TRANSISTOR, JFET, DUAL, P; Transistor Type:JFET; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss:-20mA to -135mA; Gate-Source Cutoff Voltage Vgs(off) Max:10V; Power Dissipation Pd:350mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-236; No. of Pins:3; Current Idss Max:135mA; Current Idss Min:20mA; Package / Case:TO-236; Termination Type:SMD; Transistor Polarity:P Channel
*** Electronics
NXP PMBFJ174,215 P-channel JFET Transistor, 30 V, Idss 20135mA, 3-Pin SOT-23
***ure Electronics
PMBFJ174 Series 30 V 20 mA P-Channel Silicon Field-Effect Transistor - SOT-23-3
***ment14 APAC
RF JFET, N CH, 30V, 135MA, 3-SOT-23; TRA; Transistor Type:RF JFET; Breakdown Voltage Vbr:30V; Zero Gate
***nell
RF JFET, N CHANNEL, 30V, 135MA, 3-SOT-23
***ical
Trans JFET P-CH 30V 135mA Si 3-Pin TO-236AB T/R
***eco
PMBFJ174,215,TAPE7 J-FET, SOT 23, R77
*** Americas
STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'
***hardson RFPD
RF SMALL SIGNAL TRANSISTOR MOSFET
Parte # Mfg. Descripción Valores Precio
2N5116UB
DISTI # V36:1790_17821296
Microsemi CorporationTrans JFET P-CH 30V 3-Pin UB
RoHS: Not compliant
33
  • 25:$56.7900
  • 1:$90.8600
2N5116UB
DISTI # V36:1790_09098079
Microsemi CorporationTrans JFET P-CH 30V 3-Pin UB
RoHS: Not compliant
0
  • 100000:$42.8100
  • 50000:$42.8200
  • 10000:$43.2900
  • 1000:$44.2100
  • 100:$44.3600
2N5116UB
DISTI # 2N5116UB-ND
Microsemi CorporationP CHANNEL JFET
Min Qty: 100
Container: Bulk
Limited Supply - Call
    2N5116UB
    DISTI # 30525616
    Microsemi CorporationTrans JFET P-CH 30V 3-Pin UB
    RoHS: Not compliant
    33
    • 25:$56.7900
    • 1:$90.8600
    Imagen Parte # Descripción
    2N5190G

    Mfr.#: 2N5190G

    OMO.#: OMO-2N5190G

    Bipolar Transistors - BJT BIP NPN 4A 40V
    2N5114JTX02

    Mfr.#: 2N5114JTX02

    OMO.#: OMO-2N5114JTX02

    JFET 19500/476 JANTX2N5114
    2N5115JTVL02

    Mfr.#: 2N5115JTVL02

    OMO.#: OMO-2N5115JTVL02

    JFET 19500/476 JANTXV2N5115 Sdr Dp
    2N5116JTVL02

    Mfr.#: 2N5116JTVL02

    OMO.#: OMO-2N5116JTVL02

    JFET
    2N5133

    Mfr.#: 2N5133

    OMO.#: OMO-2N5133-1190

    Bipolar Junction Transistor, NPN Type, TO-106
    2N5154L

    Mfr.#: 2N5154L

    OMO.#: OMO-2N5154L-MICROSEMI

    PNP POWER SILICON TRANSISTOR
    2N5191G.

    Mfr.#: 2N5191G.

    OMO.#: OMO-2N5191G--1190

    Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:60V, Transition Frequency ft:2MHz, Power Dissipation Pd:40W, DC Collector Current:4A, DC Current Gain hFE:2hFE, No. of Pins:3Pins, Op
    2N5191G

    Mfr.#: 2N5191G

    OMO.#: OMO-2N5191G-ON-SEMICONDUCTOR

    TRANS NPN 60V 4A TO225AA
    2N5114JAN02

    Mfr.#: 2N5114JAN02

    OMO.#: OMO-2N5114JAN02-VISHAY

    JFET P-CH 30V TO-206AA
    2N5115-E3

    Mfr.#: 2N5115-E3

    OMO.#: OMO-2N5115-E3-VISHAY

    JFET P-CH 30V TO-18
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de 2N5116UB es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    73,42 US$
    73,42 US$
    10
    69,75 US$
    697,54 US$
    100
    66,08 US$
    6 608,25 US$
    500
    62,41 US$
    31 205,65 US$
    1000
    58,74 US$
    58 740,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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