OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

MJD45H11-1G

MJD45H11-1G
Mfr. #:
MJD45H11-1G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - BJT 8A 80V 20W PNP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MJD45H11-1G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MJD45H11-1G DatasheetMJD45H11-1G Datasheet (P4-P6)MJD45H11-1G Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
DPAK-3
Polaridad del transistor:
PNP
Configuración:
Único
Voltaje colector-emisor VCEO Max:
80 V
Colector- Voltaje base VCBO:
5 V
Emisor- Voltaje base VEBO:
5 V
Voltaje de saturación colector-emisor:
1 V
Corriente máxima del colector de CC:
8 A
Producto de ganancia de ancho de banda fT:
90 MHz
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
MJD45H11
Altura:
6.35 mm
Longitud:
6.73 mm
Embalaje:
Tubo
Ancho:
2.38 mm
Marca:
EN Semiconductor
Corriente continua del colector:
8 A
Colector de CC / Ganancia base hfe Min:
60
Pd - Disipación de energía:
20 W
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
75
Subcategoría:
Transistores
Unidad de peso:
0.012346 oz
Tags
MJD45H11-1, MJD45H, MJD45, MJD4, MJD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ca Corp
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
***emi
8 A, 80 V PNP Power Bipolar Junction Transistor
***(Formerly Allied Electronics)
ON Semi MJD45H11-1G PNP Bipolar Transistor, 8 A, 80 V, 3-Pin IPAK | ON Semiconductor MJD45H11-1G
*** Electronics
Trans GP BJT PNP 80V 8A Automotive 3-Pin(3+Tab) IPAK Rail
***ure Electronics
MJD Series 80 V 8 A Through Hole PNP Complementary Power Transistor
***ark
Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:80V; Dc Collector Current:8A; Power Dissipation Pd:20W; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:90Mhz; Dc Current Gain Hfe:60Hfe Rohs Compliant: Yes
***th Star Micro
...for general purpose power and switching such as output or driver stag applications such as switching regulators converters and power amplifiers.
***r Electronics
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
***emi
10 A, 60 V PNP Bipolar Power Transistor
***nell
MJD2955-001, SINGLE BIPOLAR TRANSISTORS;
***r Electronics
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
***emi
10 A, 60 V PNP Bipolar Power Transistor
***et
Trans GP BJT PNP 60V 10A 3-Pin(3+Tab) DPAK-3 Rail
***ark
BIPOLAR TRANSISTOR, PNP, -60V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ, ft:2MHz; Power Dissipation Pd:20W; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes
***r Electronics
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
***emi
6.0 A, 100 V PNP Bipolar Power Transistor
***p One Stop
Trans GP BJT PNP 100V 6A Automotive 3-Pin(3+Tab) IPAK Rail
***enic
100V 20W 6A 15@3A4V 3MHz 1.5V@6A600mA PNP -65¡Í~+150¡Í@(Tj) IPAK Bipolar Transistors - BJT ROHS
***nell
TRANSISTOR, BIPOL, PNP, -100V; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 20W; DC Collector Current: -6A; DC Current Gain hFE: 15hFE; Transistor Ca
***ark
BIPOLAR TRANSISTOR, PNP, -100V, D-PAK-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:6A; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
MJD45H11-1G
DISTI # V99:2348_07283998		ON SemiconductorTrans GP BJT PNP 80V 8A Automotive 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		3267
  • 1000:$0.2617
  • 500:$0.3052
  • 100:$0.3183
  • 10:$0.4436
  • 1:$0.5080
MJD45H11-1G
DISTI # MJD45H11-1GOS-ND		ON SemiconductorTRANS PNP 80V 8A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		1925In Stock
  • 1050:$0.3004
  • 525:$0.3755
  • 150:$0.4750
  • 75:$0.5820
  • 1:$0.7000
MJD45H11-1G
DISTI # 29537138		ON SemiconductorTrans GP BJT PNP 80V 8A Automotive 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		3267
  • 1000:$0.2617
  • 500:$0.2829
  • 100:$0.3185
  • 30:$0.4379
MJD45H11-1G
DISTI # MJD45H11-1G		ON SemiconductorTrans GP BJT PNP 80V 8A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: MJD45H11-1G)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 1850
  • 1:$0.4629
  • 10:$0.4619
  • 25:$0.4599
  • 50:$0.4589
  • 100:$0.3229
  • 500:$0.3219
  • 1000:$0.2579
MJD45H11-1G
DISTI # MJD45H11-1G		ON SemiconductorTrans GP BJT PNP 80V 8A 3-Pin(3+Tab) IPAK Rail (Alt: MJD45H11-1G)
RoHS: Compliant
Min Qty: 1950		Asia - 9750
  • 75:$1.6110
  • 150:$0.3098
  • 225:$0.2983
  • 375:$0.2877
  • 750:$0.2778
  • 1875:$0.2685
  • 3750:$0.2641
MJD45H11-1G.
DISTI # 15AC3560		ON SemiconductorTransistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:90MHz,Power Dissipation Pd:20W,DC Collector Current:-8A,DC Current Gain hFE:60hFE,No. of Pins:3Pins,Operating Temperature Max:150°C , RoHS Compliant: Yes1850
  • 1:$0.6700
  • 10:$0.5550
  • 100:$0.3580
  • 500:$0.3230
  • 1000:$0.2870
  • 5000:$0.2420
  • 10000:$0.2330
MJD45H11-1G
DISTI # 70340245		ON SemiconductorON Semi MJD45H11-1G PNP Bipolar Transistor,8 A,80 V,3-Pin IPAK
RoHS: Compliant		0
  • 30:$0.2700
  • 75:$0.2640
  • 150:$0.2590
  • 300:$0.2540
MJD45H11-1G
DISTI # 863-MJD45H11-1G		ON SemiconductorBipolar Transistors - BJT 8A 80V 20W PNP
RoHS: Compliant		2031
  • 1:$0.6700
  • 10:$0.5550
  • 100:$0.3580
  • 1000:$0.2870
  • 2500:$0.2420
  • 10000:$0.2330
  • 25000:$0.2240
MJD45H11-001
DISTI # 863-MJD45H11-001		ON SemiconductorBipolar Transistors - BJT 8A 80V 20W PNP
RoHS: Not compliant		0
    MJD45H11-1G
    DISTI # 7905353    		ON SemiconductorPNP POWER TRANSISTOR 80V 8A 20W IPAK, PK1230
    • 15:£0.4630
    MJD45H11-1GON SemiconductorINSTOCK22863
      MJD45H11-1G
      DISTI # XSFP00000140183      		ON SEMICONDUCTORPower Bipolar Transistor,8AI(C),80VV(BR)CEO,1-Element, PNP,Silicon,Plastic/Epoxy,3Pin
      RoHS: Compliant      		20190
      • 450:$0.3200
      • 20190:$0.3000
      MJD45H11-1G
      DISTI # C1S541900516782      		ON SemiconductorTrans GP BJT PNP 80V 8A 1750mW Automotive 3-Pin(3+Tab) IPAK Tube
      RoHS: Compliant      		3267
      • 1000:$0.2617
      • 500:$0.3052
      • 10:$0.4436
      MJD45H11-1G
      DISTI # 2727981      		ON SemiconductorTRANSISTOR, PNP, -80V, -8A, TO-251
      RoHS: Compliant      		892
      • 5:£0.4790
      • 25:£0.4430
      • 100:£0.2740
      • 250:£0.2440
      • 500:£0.2150
      MJD45H11-1G
      DISTI # 2727981      		ON SemiconductorTRANSISTOR, PNP, -80V, -8A, TO-251
      RoHS: Compliant      		904
      • 1:$1.0700
      • 10:$0.8780
      • 100:$0.5670
      • 1000:$0.4550
      • 2500:$0.3840
      • 10000:$0.3690
      • 25000:$0.3550
      • 50000:$0.3490
      Imagen Parte # Descripción
      CD143A-SR05

      Mfr.#: CD143A-SR05

      OMO.#: OMO-CD143A-SR05

      		 TVS Diodes / ESD Suppressors SOT 143 5V 500W Low Capacitance
      MJD44H11-1G

      Mfr.#: MJD44H11-1G

      OMO.#: OMO-MJD44H11-1G

      		 Bipolar Transistors - BJT 8A 80V 20W NPN
      1N4148

      Mfr.#: 1N4148

      OMO.#: OMO-1N4148

      		 Diodes - General Purpose, Power, Switching 100V Io/200mA BULK
      FT232RL-REEL

      Mfr.#: FT232RL-REEL

      OMO.#: OMO-FT232RL-REEL

      		 USB Interface IC USB to Serial UART Enhanced IC SSOP-28
      ES1D

      Mfr.#: ES1D

      OMO.#: OMO-ES1D

      		 Rectifiers 1.0a Rectifier UF Recovery
      ERJ-3EKF1001V

      Mfr.#: ERJ-3EKF1001V

      OMO.#: OMO-ERJ-3EKF1001V

      		 Thick Film Resistors - SMD 0603 1Kohms 1% AEC-Q200
      BLM21AG102SN1D

      Mfr.#: BLM21AG102SN1D

      OMO.#: OMO-BLM21AG102SN1D

      		 Ferrite Beads 0805 1000 OHM
      MCP1702T-3302E/CB

      Mfr.#: MCP1702T-3302E/CB

      OMO.#: OMO-MCP1702T-3302E-CB

      		 LDO Voltage Regulators LDO w/ Low Quiescent
      CD143A-SR05

      Mfr.#: CD143A-SR05

      OMO.#: OMO-CD143A-SR05-BOURNS

      		 Nuevo y original
      BLM21AG102SN1D

      Mfr.#: BLM21AG102SN1D

      OMO.#: OMO-BLM21AG102SN1D-MURATA-ELECTRONICS

      		 EMI Filter Beads, Chips & Arrays 0805 1000 OHM
      Disponibilidad
      Valores:
      Available
      En orden:
      1984
      Ingrese la cantidad:
      El precio actual de MJD45H11-1G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,67 US$
      0,67 US$
      10
      0,55 US$
      5,55 US$
      100
      0,36 US$
      35,80 US$
      1000
      0,29 US$
      287,00 US$
      2500
      0,24 US$
      605,00 US$
      10000
      0,23 US$
      2 330,00 US$
      25000
      0,22 US$
      5 600,00 US$
      50000
      0,22 US$
      11 000,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
      Empezar con
      Top