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1MBC10D-060

1MBC10D-060
Mfr. #:
1MBC10D-060
Fabricante:
Fuji Electric Co Ltd
Descripción:
IGBT, IGBT+FWD, Molded, TO-220AB Case, 20A Collector, 75 W (Max.), 600V, +/-20V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
1MBC10D-060 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
1MBC1, 1MBC, 1MB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IGBT, IGBT+FWD, Molded, TO-220AB Case, 20A Collector, 75 W (Max.), 600V, +/-20V
*** Electronics
IGBT IRG4BC40UPBF IGBT 600V 40A 160W Through Hole TO-220AB 20A/600V TO-220AB
***p One Stop
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***ure Electronics
IRG4BC40UPbF Series 600 V 20 A N-Channel Ultrafast Speed IGBT - TO-220AB
***ineon
Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine
***itex
Transistor; IGBT; 600V; 40A; 160W; -55+150 deg.C; THT; TO220
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:IRG4BC40UPBF; Fall Time tf:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:19ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
***ure Electronics
IRG4BC40WPBF Series 600 V 20 A N-Channel Latest Generation IGBT - TO-220AB
***ineon
Target Applications: Air Conditioner; Dishwasher; Fan; PFC; Pump; Washing Machine
*** Stop Electro
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 160W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
***ment14 APAC
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Current Temperature:25°C; Fall Time Max:74ns; Fall Time tf:74ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon SCT
IRGB20B60PD1PBF Series 600 V 22 A N-Channel UltraFast IGBT - TO-220AB, TO220COPAK-3, RoHS
***et
Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB
*** Stop Electro
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, 600V, 40A, TO-220AB; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:215W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Package / Case:TO-220AB; Power Dissipation Max:215W; Power Dissipation Pd:215W; Power Dissipation Pd:215W; Pulsed Current Icm:80A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-220AB
***ure Electronics
IXGP Series 1200 V 40 A Flange Mount GEN X3 IGBT - TO-220AB
***nell
IGBT,1200V,20A,TO-220AB; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 180W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220AB; No. of Pins: 3Pins
***ark
Genx3 Igbt, 1200V, 40A, To-220Ab; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:180W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Msl:- Rohs Compliant: Yes
*** Source Electronics
Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB
***ure Electronics
HGTP7N60A4 Series 600 V 34 A Flange Mount SMPS N-Channel IGBT-TO-220AB
***r Electronics
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:34A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:34A; Current Temperature:25°C; Fall Time tf:45ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:125W; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulsed Current Icm:56A; Rise Time:11ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***rchild Semiconductor
The HGTP7N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
***ure Electronics
IXA20I1200PB Series 1200 V 38 A Through Hole Silicon IGBT - TO-220-3
***el Electronic
IXYS SEMICONDUCTOR IXA20I1200PB IGBT Single Transistor, 33 A, 2.1 V, 130 W, 1.2 kV, TO-220AB, 3 Pins
***nell
IGBT,1200V,33A,TO-220; DC Collector Current: 33A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 130W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220AB; No. of Pins: 3Pins;
***ark
Igbt, 1200V, 33A, To-220; Continuous Collector Current:33A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:130W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes
Parte # Mfg. Descripción Valores Precio
1MBC10D-060
DISTI # 70212511		Fuji Electric Co LtdIGBT,IGBT+FWD,Molded,TO-220AB Case,20A Collector,75 W (Max.),600V,+/-20V
RoHS: Not Compliant		0
  • 500:$4.9500
1MBC10D-060
DISTI # FE0000000001160		Fuji Electric Co LtdMOSFET
RoHS: Compliant		0 in Stock0 on Order
  • 500:$1.3600
  • 1:$1.4600
Imagen Parte # Descripción
1MBC10-060

Mfr.#: 1MBC10-060

OMO.#: OMO-1MBC10-060-1190

 MOSFET
1MBC10D-060

Mfr.#: 1MBC10D-060

OMO.#: OMO-1MBC10D-060-1190

 IGBT, IGBT+FWD, Molded, TO-220AB Case, 20A Collector, 75 W (Max.), 600V, +/-20V
1MBC15-060

Mfr.#: 1MBC15-060

OMO.#: OMO-1MBC15-060-1190

 MOSFET
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de 1MBC10D-060 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
7,42 US$
7,42 US$
10
7,05 US$
70,54 US$
100
6,68 US$
668,25 US$
500
6,31 US$
3 155,65 US$
1000
5,94 US$
5 940,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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