STGWT40HP65FB

STGWT40HP65FB
Mfr. #:
STGWT40HP65FB
Fabricante:
STMicroelectronics
Descripción:
TRENCH GATE FIELD-STOP IGBT, HB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGWT40HP65FB Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
STGWT40HP65FB más información STGWT40HP65FB Product Details
Atributo del producto
Valor de atributo
Tags
STGWT40H, STGWT4, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube
***et
Trans IGBT Chip N 650V 80A 3-Pin TO-3P Tube
***i-Key
TRENCH GATE FIELD-STOP IGBT, HB
***ark
Ptd High Voltage
***ment14 APAC
IGBT, 650V, 80A, 175DEG C, 283W; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:283W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3P; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)
***nell
IGBT, 650V, 80A, 175DEG C, 283W; Prąd kolektora DC:80A; Napięcie nasycenia kolektor - emiter Vce(on):1.6V; Straty mocy Pd:283W; Napięcie kolektor - emiter V(br)ceo:650V; Rodzaj obudowy tranzystora:TO-3P; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:HB Series; Kwalifikacja motoryzacyjna:-; Substancje SVHC:No SVHC (15-Jan-2019)
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Parte # Mfg. Descripción Valores Precio
STGWT40HP65FB
DISTI # V99:2348_17652439
STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube
RoHS: Compliant
450
  • 2500:$1.1511
  • 1000:$1.2099
  • 500:$1.4712
  • 100:$1.6598
  • 10:$2.1069
  • 1:$2.7274
STGWT40HP65FB
DISTI # 497-16972-ND
STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, HB
RoHS: Compliant
Min Qty: 1
Container: Tube
476In Stock
  • 5400:$1.1900
  • 3000:$1.2049
  • 600:$1.5619
  • 100:$1.9010
  • 25:$2.2312
  • 10:$2.3650
  • 1:$2.6300
STGWT40HP65FB
DISTI # 31743087
STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube
RoHS: Compliant
450
  • 6:$2.7274
STGWT40HP65FB
DISTI # STGWT40HP65FB
STMicroelectronicsTrans IGBT Chip N 650V 80A 3-Pin TO-3P Tube (Alt: STGWT40HP65FB)
RoHS: Compliant
Min Qty: 30
Container: Tube
Europe - 0
  • 300:€1.7900
  • 180:€1.8900
  • 120:€1.9900
  • 60:€2.0900
  • 30:€2.1900
STGWT40HP65FB
DISTI # STGWT40HP65FB
STMicroelectronicsTrans IGBT Chip N 650V 80A 3-Pin TO-3P Tube - Bulk (Alt: STGWT40HP65FB)
RoHS: Compliant
Min Qty: 600
Container: Bulk
Americas - 0
  • 6000:$1.0849
  • 3000:$1.1079
  • 1800:$1.1589
  • 1200:$1.2139
  • 600:$1.2739
STGWT40HP65FB
DISTI # 20AC4223
STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$1.0700
STGWT40HP65FB
DISTI # 511-STGWT40HP65FB
STMicroelectronicsIGBT Transistors PTD HIGH VOLTAGE
RoHS: Compliant
526
  • 1:$2.5000
  • 10:$2.1200
  • 100:$1.7000
  • 500:$1.4800
  • 1000:$1.2300
  • 2500:$1.1400
  • 5000:$1.1000
STGWT40HP65FB
DISTI # 3132711
STMicroelectronicsIGBT, 650V, 80A, 175DEG C, 283W
RoHS: Compliant
0
  • 1000:$2.5100
  • 500:$2.8900
  • 250:$3.1700
  • 100:$3.3400
  • 10:$3.7800
  • 1:$4.9100
STGWT40HP65FB
DISTI # 3132711
STMicroelectronicsIGBT, 650V, 80A, 175DEG C, 283W
RoHS: Compliant
0
  • 500:£1.6600
  • 250:£1.8200
  • 100:£1.9200
  • 10:£2.1700
  • 1:£2.8200
Imagen Parte # Descripción
STGWT40HP65FB

Mfr.#: STGWT40HP65FB

OMO.#: OMO-STGWT40HP65FB

IGBT Transistors PTD HIGH VOLTAGE
STGWT40V60DF

Mfr.#: STGWT40V60DF

OMO.#: OMO-STGWT40V60DF

IGBT Transistors 600V 40A High Speed Trench Gate IGBT
STGWT40V60DLF

Mfr.#: STGWT40V60DLF

OMO.#: OMO-STGWT40V60DLF-STMICROELECTRONICS

IGBT Transistors 600V 40A High Speed Trench Gate IGBT
STGWT40V60DF

Mfr.#: STGWT40V60DF

OMO.#: OMO-STGWT40V60DF-STMICROELECTRONICS

IGBT 600V 80A 283W TO3P-3
STGWT40H65DFB

Mfr.#: STGWT40H65DFB

OMO.#: OMO-STGWT40H65DFB-STMICROELECTRONICS

IGBT 650V 80A 283W TO3P-3L
STGWT40H65FB

Mfr.#: STGWT40H65FB

OMO.#: OMO-STGWT40H65FB-STMICROELECTRONICS

IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
STGWT40V60DF-F

Mfr.#: STGWT40V60DF-F

OMO.#: OMO-STGWT40V60DF-F-1190

Nuevo y original
STGWT40V60DF GWT40V60DF

Mfr.#: STGWT40V60DF GWT40V60DF

OMO.#: OMO-STGWT40V60DF-GWT40V60DF-1190

Nuevo y original
STGWT40H65FB,GWT40H65FB,

Mfr.#: STGWT40H65FB,GWT40H65FB,

OMO.#: OMO-STGWT40H65FB-GWT40H65FB--1190

Nuevo y original
STGWT40HP65FB

Mfr.#: STGWT40HP65FB

OMO.#: OMO-STGWT40HP65FB-STMICROELECTRONICS

TRENCH GATE FIELD-STOP IGBT, HB
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de STGWT40HP65FB es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,60 US$
1,60 US$
10
1,52 US$
15,25 US$
100
1,44 US$
144,45 US$
500
1,36 US$
682,15 US$
1000
1,28 US$
1 284,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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