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IPA65R225C7

IPA65R225C7
Mfr. #:
IPA65R225C7
Fabricante:
Infineon Technologies
Descripción:
Power Field-Effect Transistor, 7A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPA65R225C7 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
IPA65R225C7 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
XPA65R225
embalaje
Tubo
Alias ​​de parte
IPA65R225C7XKSA1 SP001080144
Estilo de montaje
A través del orificio
Paquete-Estuche
TO220
Tecnología
Si
Número de canales
1 Channel
Configuración
1 N-Channel
Tipo transistor
1 N-Channel
Disipación de potencia Pd
29 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
10 ns
Hora de levantarse
6 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
7 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Source-Threshold-Voltage
3.5 V
Resistencia a la fuente de desagüe de Rds
225 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
48 ns
Tiempo de retardo de encendido típico
9 ns
Qg-Gate-Charge
20 nC
Transconductancia directa-Mín.
-
Modo de canal
Mejora
Kit de desarrollo
-
Tags
IPA65R2, IPA65R, IPA65, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descripción Valores Precio
IPA65R225C7XKSA1
DISTI # 31321498		Infineon Technologies AGTrans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		400
  • 500:$1.4400
  • 100:$1.6416
  • 10:$2.0448
IPA65R225C7XKSA1
DISTI # IPA65R225C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$1.6401
IPA65R225C7XKSA1
DISTI # C1S322000641958		Infineon Technologies AGMOSFETs
RoHS: Compliant		400
  • 100:$1.9900
  • 25:$2.4200
  • 5:$2.9800
IPA65R225C7XKSA1
DISTI # IPA65R225C7		Infineon Technologies AGTrans MOSFET N-CH 700V 7A 3-Pin TO-220 FP Tube (Alt: IPA65R225C7)
RoHS: Compliant
Min Qty: 500
Container: Tube		Asia - 0
  • 500:$1.2171
  • 1000:$1.1833
  • 1500:$1.1514
  • 2500:$1.1211
  • 5000:$1.1065
  • 12500:$1.0923
  • 25000:$1.0785
IPA65R225C7XKSA1
DISTI # IPA65R225C7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 7A 3-Pin TO-220 FP Tube - Rail/Tube (Alt: IPA65R225C7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.2269
  • 1000:$1.1829
  • 2000:$1.1399
  • 3000:$1.1019
  • 5000:$1.0819
IPA65R225C7XKSA1
DISTI # 33AC5086		Infineon Technologies AGMOSFET, N-CH, 650V, 7A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.199ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes193
  • 1:$2.5100
  • 10:$2.1300
  • 100:$1.7100
  • 500:$1.5000
IPA65R225C7Infineon Technologies AGPower Field-Effect Transistor, 7A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		2000
  • 1000:$1.0900
  • 500:$1.1500
  • 100:$1.2000
  • 25:$1.2500
  • 1:$1.3400
IPA65R225C7
DISTI # 726-IPA65R225C7		Infineon Technologies AGMOSFET HIGH POWER BEST IN CLASS
RoHS: Compliant		0
  • 1:$2.5100
  • 10:$2.1300
  • 100:$1.7100
  • 500:$1.5000
IPA65R225C7XKSA1
DISTI # 726-IPA65R225C7XKSA1		Infineon Technologies AGMOSFET HIGH POWER BEST IN CLASS0
  • 1:$2.5100
  • 10:$2.1300
  • 100:$1.7100
  • 500:$1.5000
IPA65R225C7XKSA1
DISTI # 2781345		Infineon Technologies AGMOSFET, N-CH, 650V, 7A, TO-220
RoHS: Compliant		193
  • 1:$2.5800
  • 10:$2.4100
  • 100:$2.1300
  • 250:$2.0100
  • 500:$1.9100
  • 1000:$1.8200
IPA65R225C7XKSA1
DISTI # 2781345		Infineon Technologies AGMOSFET, N-CH, 650V, 7A, TO-220
RoHS: Compliant		216
  • 1:£1.9400
  • 10:£1.6800
  • 100:£1.3500
  • 250:£1.2700
  • 500:£1.1800
Imagen Parte # Descripción
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Mfr.#: IPA65R310CFDXKSA1

OMO.#: OMO-IPA65R310CFDXKSA1

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IPA65R600E6XKSA1

Mfr.#: IPA65R600E6XKSA1

OMO.#: OMO-IPA65R600E6XKSA1

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IPA65R190E6XKSA1

Mfr.#: IPA65R190E6XKSA1

OMO.#: OMO-IPA65R190E6XKSA1-INFINEON-TECHNOLOGIES

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Mfr.#: IPA65F6110CFD

OMO.#: OMO-IPA65F6110CFD-1190

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IPA65R190E6,65E6190

Mfr.#: IPA65R190E6,65E6190

OMO.#: OMO-IPA65R190E6-65E6190-1190

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IPA65R280E6,65E6280

Mfr.#: IPA65R280E6,65E6280

OMO.#: OMO-IPA65R280E6-65E6280-1190

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IPA65R310CFDXKSA1

Mfr.#: IPA65R310CFDXKSA1

OMO.#: OMO-IPA65R310CFDXKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 650V 11.4A TO220
IPA65R600E6,65E6600

Mfr.#: IPA65R600E6,65E6600

OMO.#: OMO-IPA65R600E6-65E6600-1190

 Nuevo y original
IPA65R225C7XKSA1

Mfr.#: IPA65R225C7XKSA1

OMO.#: OMO-IPA65R225C7XKSA1-INFINEON-TECHNOLOGIES

 MOSFET HIGH POWER BEST IN CLASS
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de IPA65R225C7 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,64 US$
1,64 US$
10
1,55 US$
15,53 US$
100
1,47 US$
147,15 US$
500
1,39 US$
694,90 US$
1000
1,31 US$
1 308,00 US$
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