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4AK18

4AK18
Mfr. #:
4AK18
Fabricante:
Rochester Electronics, LLC
Descripción:
- Bulk (Alt: 4AK18)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
4AK18 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
4AK1, 4AK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Stockers USA
0.53 ohm POWER FET
***id Electronics
Transistor MOSFET N-Ch. 60V 2,7A 1,25W 0,092Ohm SOT23 IRLML0060TRPBF
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
***ure Electronics
Single N-Channel 60 V 116 mOhm 2.5 nC 1.25 W Silicon SMT Mosfet - SOT-23
***(Formerly Allied Electronics)
MOSFET, 60V, 2.7A, 92 MOHM, 2.5 NC QG, SOT-23
***icontronic
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ineon
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1; SOT-23 Footprint | Target Applications: DC Switches; Load Switch; Load Switch High Side
***ment14 APAC
MOSFET, N CH, 60V, 2.7A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):78mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.25W; Voltage Vgs Max:16V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.7 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 116 / Gate-Source Voltage V = 16 / Fall Time ns = 4.2 / Rise Time ns = 6.3 / Turn-OFF Delay Time ns = 6.8 / Turn-ON Delay Time ns = 5.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.25
***(Formerly Allied Electronics)
MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 150mohm; Id 4.7A; SO-8; Pd 5W
***ure Electronics
SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8
***enic
60V 4.7A 2.4W 120m´Î@10V3.2A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
***nsix Microsemi
Small Signal Field-Effect Transistor, 4.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:5W Rohs Compliant: No
***nell
MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
***th Star Micro
Transistor MOSFET N-CH 60V 3A 4-Pin (3+Tab) SOT-223 T/R
***ure Electronics
N-Channel 60 V 120 mOhm 1.3 W Surface Mount Power MOSFET - SOT-223
***emi
Single N-Channel Logic Level Power MOSFET 60V, 3A, 120mΩ
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 68VDC,RDS(ON) 92 Milliohms,ID 3A,SOT-223 (TO-261),-55C
***r Electronics
Power Field-Effect Transistor, 3A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 120 / Gate-Source Voltage V = 15 / Fall Time ns = 27 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 2.1
***(Formerly Allied Electronics)
IRFL014TRPBF N-channel MOSFET Transistor; 2.7 A; 60 V; 3 + Tab-Pin SOT-223
***ure Electronics
Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3
***ical
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***emi
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 2.8 A, 110 mΩ, SOT-223
***ure Electronics
N-Channel 60 V 0.11Ohm Surface Mount Logic Mosfet - SOT-223
***et Europe
Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R
***nell
MOSFET, N CH, 60V, 2.8A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.8A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.088oh; Available until stocks are exhausted Alternative available
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***(Formerly Allied Electronics)
NTF2955T1G P-channel MOSFET Transistor; 2.6 A; 60 V; 3 + Tab-Pin SOT-223
***ure Electronics
P-Channel 60 V 145 mOhm 2.3 W Surface Mount Power MOSFET - SOT-223
***ical
Trans MOSFET P-CH 60V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R
***emi
Single P-Channel Power MOSFET -60V, -2.6A, 170mΩ
***th Star Micro
This is a -60 V P-Channel MOSFET in SOT-223 package. It is an extremely rugged device and has a large safe operating area.
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***trelec
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -2.6 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 145 / Gate-Source Voltage V = 20 / Fall Time ns = 38 / Rise Time ns = 7.6 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 2.3
Parte # Mfg. Descripción Valores Precio
4AK18
DISTI # 4AK18		Renesas Electronics Corporation- Bulk (Alt: 4AK18)
Min Qty: 62
Container: Bulk		Americas - 0
  • 620:$5.0900
  • 310:$5.3900
  • 186:$5.5900
  • 124:$5.7900
  • 62:$6.0900
AK1862HB-AT
DISTI # 664-AK1862HB-AT		ADDA USA CorporationAC Fans AC Fan, 180x65mm, 230VAC, 380CFM, High Speed, Ball Bearing
RoHS: Compliant		0
  • 1:$92.0100
  • 10:$86.4000
  • 25:$82.0800
  • 50:$77.7600
  • 100:$73.4400
AK1862HB-AW
DISTI # 664-AK1862HB-AW		ADDA USA CorporationAC Fans AC Fan, 180x65mm, 230VAC, 380CFM, High Speed, Ball Bearing
RoHS: Compliant		0
  • 20:$80.0000
  • 25:$76.0000
  • 50:$72.0000
  • 100:$68.0000
AK1861HB-AW-LF
DISTI # 664-AK1861HB-AW-LF		ADDA USA CorporationAC Fans AC Fan, 180x65mm, 115VAC, High Speed, Ball Bearing
RoHS: Compliant		0
  • 20:$75.4800
  • 25:$71.4300
  • 50:$67.8000
  • 100:$64.5200
4AK18Renesas Electronics CorporationPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RoHS: Not Compliant		6497
  • 1000:$5.3800
  • 500:$5.6700
  • 100:$5.9000
  • 25:$6.1500
  • 1:$6.6200
FKC4A-K189E
DISTI # MOL173111-0286		MolexFKC4A-K189E FCT HOOD S4 70 DEG SHLD PLSTAmericas - 0
    4AK18Renesas Electronics Corporation 115
    • 112:$2.0905
    • 31:$2.2600
    • 1:$3.3900
    Imagen Parte # Descripción
    4A24-N30-E

    Mfr.#: 4A24-N30-E

    OMO.#: OMO-4A24-N30-E-1190

    		 30 W, 23 -30 VDC Vin, Single Output, 4000 [email protected] A DC-DC Converte
    4A32BNA11

    Mfr.#: 4A32BNA11

    OMO.#: OMO-4A32BNA11-HONEYWELL-SENSING-PRODUCTIVITY

    		 Pushbutton Switches UNSEALED OI
    4A1244-0000

    Mfr.#: 4A1244-0000

    OMO.#: OMO-4A1244-0000-1190

    		 Nuevo y original
    4A1302

    Mfr.#: 4A1302

    OMO.#: OMO-4A1302-1190

    		 Nuevo y original
    4A195-22NCT

    Mfr.#: 4A195-22NCT

    OMO.#: OMO-4A195-22NCT-1190

    		 Nuevo y original
    4A5-32/32-10VC

    Mfr.#: 4A5-32/32-10VC

    OMO.#: OMO-4A5-32-32-10VC-1190

    		 Nuevo y original
    4A50

    Mfr.#: 4A50

    OMO.#: OMO-4A50-1190

    		 Nuevo y original
    4ADNPD

    Mfr.#: 4ADNPD

    OMO.#: OMO-4ADNPD-1190

    		 Nuevo y original
    4AGE

    Mfr.#: 4AGE

    OMO.#: OMO-4AGE-1190

    		 Nuevo y original
    4AK24-F112

    Mfr.#: 4AK24-F112

    OMO.#: OMO-4AK24-F112-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    3500
    Ingrese la cantidad:
    El precio actual de 4AK18 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,14 US$
    3,14 US$
    10
    2,98 US$
    29,79 US$
    100
    2,82 US$
    282,22 US$
    500
    2,67 US$
    1 332,70 US$
    1000
    2,51 US$
    2 508,60 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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