GS61008P-E05

GS61008P-E05
Mfr. #:
GS61008P-E05
Fabricante:
GaN Systems
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS61008P-E05 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Sistemas de GaN
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Estilo de montaje
SMD / SMT
Tecnología
GaN
Número de canales
1 Channel
Configuración
Único
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
1.6 V
Resistencia a la fuente de desagüe de Rds
7.4 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
12 nC
Modo de canal
Mejora
Tags
GS61008P-E05, GS61008P-E0, GS61008, GS6100, GS610, GS61, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
GS61008P-E05-MR
DISTI # 499-GS61008P-E05-MR
GaN SystemsMOSFET 100V 80A E-Mode GaN
RoHS: Compliant
1246
  • 1:$8.4500
  • 10:$8.2100
  • 25:$7.8600
  • 250:$7.3000
  • 1000:$7.0900
GS61008P-E05-TY
DISTI # 499-GS61008P-E05-TY
GaN SystemsMOSFET 100V 90A E-Mode GaN Preproduction Units
RoHS: Compliant
0
    GS61008P-E05-B
    DISTI # GS61008P-E05-B
    GaN SystemsGAN POWER TRANSISTOR
    RoHS: Compliant
    0
    • 1:$8.2900
    • 10:$8.0800
    • 25:$7.8000
    GS61008P-E05-MR
    DISTI # GS61008P-E05-MR
    GaN SystemsGAN POWER TRANSISTOR
    RoHS: Compliant
    500
    • 250:$7.2500
    Imagen Parte # Descripción
    GS61004B-E01-MR

    Mfr.#: GS61004B-E01-MR

    OMO.#: OMO-GS61004B-E01-MR

    MOSFET 100V 45A E-Mode GaN
    GS61008P-E05-MR

    Mfr.#: GS61008P-E05-MR

    OMO.#: OMO-GS61008P-E05-MR

    MOSFET 100V 80A E-Mode GaN
    GS6100

    Mfr.#: GS6100

    OMO.#: OMO-GS6100-1190

    Nuevo y original
    GS61002

    Mfr.#: GS61002

    OMO.#: OMO-GS61002-1190

    Nuevo y original
    GS61008P-E05

    Mfr.#: GS61008P-E05

    OMO.#: OMO-GS61008P-E05-1190

    Nuevo y original
    GS61008P-E05-B

    Mfr.#: GS61008P-E05-B

    OMO.#: OMO-GS61008P-E05-B-1190

    GAN POWER TRANSISTOR
    GS61008P-E05-TY

    Mfr.#: GS61008P-E05-TY

    OMO.#: OMO-GS61008P-E05-TY-1190

    MOSFET 100V 90A E-Mode GaN Preproduction Units
    GS61008P-EVBHF

    Mfr.#: GS61008P-EVBHF

    OMO.#: OMO-GS61008P-EVBHF-1190

    Power Management IC Development Tools 100V, 7mOhm, Half Bridge Eval Board
    GS61008P-E04-TY

    Mfr.#: GS61008P-E04-TY

    OMO.#: OMO-GS61008P-E04-TY-126

    IGBT Transistors MOSFET 100V 90A E-Mode GaN Preproduction Units
    GS61008P-E03-TY

    Mfr.#: GS61008P-E03-TY

    OMO.#: OMO-GS61008P-E03-TY-128

    MOSFET 100V, 90A, E-Mode Preproduction Units
    Disponibilidad
    Valores:
    Available
    En orden:
    5500
    Ingrese la cantidad:
    El precio actual de GS61008P-E05 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,00 US$
    0,00 US$
    10
    0,00 US$
    0,00 US$
    100
    0,00 US$
    0,00 US$
    500
    0,00 US$
    0,00 US$
    1000
    0,00 US$
    0,00 US$
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