SPB04N60C3

SPB04N60C3
Mfr. #:
SPB04N60C3
Fabricante:
Rochester Electronics, LLC
Descripción:
Darlington Transistors MOSFET N-Ch 600V 4.5A D2PAK-2 CoolMOS C3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SPB04N60C3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
INFINEON
categoria de producto
FET - Single
Serie
CoolMOS C3
embalaje
Carrete
Alias ​​de parte
SP000013533 SPB04N60C3ATMA1 SPB04N60C3XT
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Nombre comercial
CoolMOS
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
50 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
9.5 ns
Hora de levantarse
2.5 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
4.5 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Resistencia a la fuente de desagüe de Rds
950 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
58.5 ns
Tiempo de retardo de encendido típico
6 ns
Modo de canal
Mejora
Tags
SPB04N60C3, SPB04N60C, SPB04N6, SPB04, SPB0, SPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) TO-263 T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
MOSFET, N, 600V, D2-PAK; Transistor type:Enhancement; Voltage, Vds typ:650V; Current, Id cont:4.5A; Resistance, Rds on:0.95ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:3V; Case style:D2-PAK (TO-263); Current, Idm RoHS Compliant: Yes
***nell
MOSFET, N-CH, 600V, 4.5A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.85ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:50W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Parte # Mfg. Descripción Valores Precio
SPB04N60C3ATMA1
DISTI # V72:2272_06383751
Infineon Technologies AGTrans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
4
  • 75000:$1.2253
  • 30000:$1.2393
  • 15000:$1.2533
  • 6000:$1.2676
  • 3000:$1.2819
  • 1000:$1.2965
  • 500:$1.3112
  • 250:$1.3261
  • 100:$1.3411
  • 50:$1.3564
  • 25:$1.3717
  • 10:$1.3874
  • 1:$1.5112
SPB04N60C3ATMA1
DISTI # SPB04N60C3ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 650V 4.5A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
11In Stock
  • 10:$1.7150
  • 1:$1.9000
SPB04N60C3ATMA1
DISTI # SPB04N60C3ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 650V 4.5A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    SPB04N60C3ATMA1
    DISTI # SPB04N60C3ATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 650V 4.5A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      SPB04N60C3
      DISTI # 30579453
      Infineon Technologies AGTrans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) TO-263
      RoHS: Compliant
      38
      • 21:$1.1501
      SPB04N60C3Infineon Technologies AGPower Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      3500
      • 1000:$0.6300
      • 500:$0.6700
      • 100:$0.6900
      • 25:$0.7200
      • 1:$0.7800
      SPB04N60C3ATMA1Infineon Technologies AGPower Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      18653
      • 1000:$0.7400
      • 500:$0.7800
      • 100:$0.8100
      • 25:$0.8400
      • 1:$0.9100
      SPB04N60C3E3045AInfineon Technologies AG 
      RoHS: Not Compliant
      2000
      • 1000:$0.3400
      • 500:$0.3600
      • 100:$0.3800
      • 25:$0.3900
      • 1:$0.4200
      SPB04N60C3ATMA1
      DISTI # 7528479P
      Infineon Technologies AGMOSFET N-CHANNEL 600V 4.5A COOLMOS TO263, RL692
      • 10:£0.8750
      • 50:£0.7750
      • 250:£0.6700
      • 500:£0.6250
      SPB04N60C3Infineon Technologies AGMOSFET Transistor, N-Channel, TO-263AB75
      • 61:$0.6000
      • 14:$1.0000
      • 1:$2.0000
      SPB04N60C3Infineon Technologies AG 94
      • 4:$1.5000
      • 15:$0.9750
      • 53:$0.5625
      SPB04N60C3Infineon Technologies AGPower Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant
      Europe - 1600
        SPB04N60C3
        DISTI # C1S322000009417
        Infineon Technologies AGTrans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) TO-263
        RoHS: Compliant
        38
        • 10:$0.9020
        • 5:$0.9660
        SPB04N60C3ATMA1
        DISTI # C1S322000215081
        Infineon Technologies AGTrans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) D2PAK T/R
        RoHS: Compliant
        4
        • 10:$1.3874
        SPB04N60C3ATMA1
        DISTI # 2480877RL
        Infineon Technologies AGMOSFET, N-CH, 600V, 4.5A, TO-263-3
        RoHS: Compliant
        0
        • 1:$2.5400
        • 10:$2.1600
        • 100:$1.7300
        • 500:$1.5100
        • 1000:$1.2400
        • 2000:$1.1600
        • 5000:$1.1200
        • 10000:$1.1000
        SPB04N60C3ATMA1
        DISTI # 2480877
        Infineon Technologies AGMOSFET, N-CH, 600V, 4.5A, TO-263-3
        RoHS: Compliant
        0
        • 1:$2.5400
        • 10:$2.1600
        • 100:$1.7300
        • 500:$1.5100
        • 1000:$1.2400
        • 2000:$1.1600
        • 5000:$1.1200
        • 10000:$1.1000
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        Mfr.#: SPB04N50C3_05

        OMO.#: OMO-SPB04N50C3-05-1190

        Nuevo y original
        SPB04N60C2

        Mfr.#: SPB04N60C2

        OMO.#: OMO-SPB04N60C2-1190

        Nuevo y original
        SPB04N60C3E3045A

        Mfr.#: SPB04N60C3E3045A

        OMO.#: OMO-SPB04N60C3E3045A-1190

        Trans MOSFET N-CH 650V 4.5A 3-Pin TO-263 T/R - Bulk (Alt: SPB04N60C3E3045A)
        Disponibilidad
        Valores:
        Available
        En orden:
        2500
        Ingrese la cantidad:
        El precio actual de SPB04N60C3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,84 US$
        0,84 US$
        10
        0,80 US$
        8,02 US$
        100
        0,76 US$
        75,94 US$
        500
        0,72 US$
        358,60 US$
        1000
        0,68 US$
        675,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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