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SI2312BDS-T1-GE3

SI2312BDS-T1-GE3
Mfr. #:
SI2312BDS-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 20V 3.9A SOT23-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2312BDS-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SI2312BDS-T1-GE3 más información
Atributo del producto
Valor de atributo
Tags
SI2312BDS-T, SI2312BDS, SI2312B, SI2312, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3
***ical
Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.025Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:850Mv; Msl:- Rohs Compliant: No
***ment14 APAC
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):31mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:8V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Junction Temperature Tj Max:150°C; Package / Case:SOT-23; Power Dissipation Pd:750mW; Power Dissipation Pd:750mW; Rise Time:30ns; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:0.85V; Voltage Vgs th Min:0.45V
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descripción Valores Precio
SI2312BDS-T1-GE3
DISTI # V72:2272_09216793		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		1161
  • 1000:$0.2142
  • 500:$0.2783
  • 250:$0.3181
  • 100:$0.3534
  • 25:$0.4250
  • 10:$0.5194
  • 1:$0.6006
SI2312BDS-T1-GE3
DISTI # V36:1790_09216793		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000:$0.2127
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 20V 3.9A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		160229In Stock
  • 1000:$0.1798
  • 500:$0.2327
  • 100:$0.2961
  • 10:$0.3970
  • 1:$0.4600
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 20V 3.9A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		160229In Stock
  • 1000:$0.1798
  • 500:$0.2327
  • 100:$0.2961
  • 10:$0.3970
  • 1:$0.4600
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 20V 3.9A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		159000In Stock
  • 75000:$0.1301
  • 30000:$0.1314
  • 15000:$0.1386
  • 6000:$0.1489
  • 3000:$0.1592
SI2312BDS-T1-GE3
DISTI # 33707813		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		3000
  • 3000:$0.1688
SI2312BDS-T1-GE3
DISTI # 32142891		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		1161
  • 35:$0.6006
SI2312BDS-T1-GE3
DISTI # 30601987		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
RoHS: Compliant		49
  • 23:$1.1000
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 3000
  • 150000:$0.1125
  • 75000:$0.1144
  • 30000:$0.1164
  • 15000:$0.1205
  • 9000:$0.1250
  • 6000:$0.1298
  • 3000:$0.1350
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1919
  • 18000:€0.2059
  • 12000:€0.2239
  • 6000:€0.2599
  • 3000:€0.3809
SI2312BDS-T1-GE3
DISTI # SI2312BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2312BDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1254
  • 18000:$0.1288
  • 12000:$0.1325
  • 6000:$0.1381
  • 3000:$0.1424
SI2312BDS-T1-GE3
DISTI # 16P3709		Vishay IntertechnologiesN CHANNEL MOSFET, 20V, 5A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,MSL:- RoHS Compliant: Yes0
  • 1000:$0.2180
  • 500:$0.2820
  • 250:$0.3130
  • 100:$0.3430
  • 50:$0.4030
  • 25:$0.4630
  • 1:$0.6060
SI2312BDS-T1-GE3
DISTI # 29X0523		Vishay IntertechnologiesMOSFET, N CHANNEL, 20V, 3.9A, SOT-23-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:3Pins,MSL:-RoHS Compliant: Yes0
  • 50000:$0.1680
  • 30000:$0.1760
  • 20000:$0.1890
  • 10000:$0.2020
  • 5000:$0.2190
  • 1:$0.2240
SI2312BDS-T1-GE3.
DISTI # 16AC0252		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,Power Dissipation Pd:750mW,No. of Pins:3Pins RoHS Compliant: No0
  • 50000:$0.1680
  • 30000:$0.1760
  • 20000:$0.1890
  • 10000:$0.2020
  • 5000:$0.2190
  • 1:$0.2240
SI2312BDS-T1-GE3
DISTI # 781-SI2312BDS-T1-GE3		Vishay IntertechnologiesMOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
RoHS: Compliant		8300
  • 1:$0.6100
  • 10:$0.4690
  • 100:$0.3480
  • 500:$0.2860
  • 1000:$0.2210
  • 3000:$0.2010
SI2312BDS-T1-GE3Vishay IntertechnologiesSingle N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3
RoHS: Compliant		75Cut Tape/Mini-Reel
  • 1:$0.2900
  • 100:$0.1880
  • 250:$0.1720
  • 500:$0.1610
  • 1500:$0.1460
SI2312BDST1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
RoHS: Compliant		45000
    SI2312BDS-T1-GE3Vishay IntertechnologiesMOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
    RoHS: Compliant    		Americas - 3000
      SI2312BDS-T1-GE3
      DISTI # C1S803605191265      		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
      RoHS: Compliant      		49
      • 10:$0.4020
      • 1:$0.8800
      Imagen Parte # Descripción
      SI2312BDS-T1-E3

      Mfr.#: SI2312BDS-T1-E3

      OMO.#: OMO-SI2312BDS-T1-E3

      		 MOSFET N-Channel 20V 3.9A
      SI2312BDS-T1-GE3

      Mfr.#: SI2312BDS-T1-GE3

      OMO.#: OMO-SI2312BDS-T1-GE3

      		 MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
      SI2312BD

      Mfr.#: SI2312BD

      OMO.#: OMO-SI2312BD-1190

      		 Nuevo y original
      SI2312BDS

      Mfr.#: SI2312BDS

      OMO.#: OMO-SI2312BDS-1190

      		 Nuevo y original
      SI2312BDS-T1-E3

      Mfr.#: SI2312BDS-T1-E3

      OMO.#: OMO-SI2312BDS-T1-E3-VISHAY

      		 MOSFET N-CH 20V 3.9A SOT23-3
      SI2312BDS-T1-GE3

      Mfr.#: SI2312BDS-T1-GE3

      OMO.#: OMO-SI2312BDS-T1-GE3-VISHAY

      		 MOSFET N-CH 20V 3.9A SOT23-3
      SI2312BDS-T1-E3-CUT TAPE

      Mfr.#: SI2312BDS-T1-E3-CUT TAPE

      OMO.#: OMO-SI2312BDS-T1-E3-CUT-TAPE-1190

      		 Nuevo y original
      SI2312BDS-T1-GE3-CUT TAPE

      Mfr.#: SI2312BDS-T1-GE3-CUT TAPE

      OMO.#: OMO-SI2312BDS-T1-GE3-CUT-TAPE-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      3500
      Ingrese la cantidad:
      El precio actual de SI2312BDS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,19 US$
      0,19 US$
      10
      0,18 US$
      1,79 US$
      100
      0,17 US$
      16,93 US$
      500
      0,16 US$
      79,95 US$
      1000
      0,15 US$
      150,50 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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