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IRL2203NPBF

IRL2203NPBF
Mfr. #:
IRL2203NPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFT 30V 100A 7mOhm 40nC Log LvlAB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRL2203NPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRL2203NPBF DatasheetIRL2203NPBF Datasheet (P4-P6)IRL2203NPBF Datasheet (P7-P9)
ECAD Model:
Más información:
IRL2203NPBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
100 A
Rds On - Resistencia de la fuente de drenaje:
10 mOhms
Vgs - Voltaje puerta-fuente:
16 V
Qg - Carga de puerta:
40 nC
Pd - Disipación de energía:
130 W
Configuración:
Único
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
SP001573688
Unidad de peso:
0.211644 oz
Tags
IRL2203NP, IRL2203N, IRL2203, IRL22, IRL2, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 7 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop Global
Trans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-220AB Tube
***ied Electronics & Automation
MOSFET, 30V, 100A, 7 MOHM, 40 NC QG, LOGIC LEVEL, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 180 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 116A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 30V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:116A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:400A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Parte # Mfg. Descripción Valores Precio
IRL2203NPBF
DISTI # 30155550		Infineon Technologies AGTrans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-220AB Tube4882
  • 1000:$0.5808
  • 500:$0.6192
  • 250:$0.6384
  • 100:$0.6672
  • 25:$0.7104
IRL2203NPBF
DISTI # IRL2203NPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 116A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1447In Stock
  • 1000:$0.7202
  • 500:$0.9123
  • 100:$1.1764
  • 50:$1.3444
  • 1:$1.6800
IRL2203NPBF
DISTI # C1S322000501234		Infineon Technologies AGTrans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		4882
  • 2000:$0.6690
  • 1000:$0.7210
  • 500:$0.9420
  • 100:$1.0200
  • 25:$1.2400
  • 5:$1.5300
IRL2203NPBF
DISTI # IRL2203NPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 116A 3-Pin(3+Tab) TO-220AB (Alt: IRL2203NPBF)
RoHS: Compliant
Min Qty: 1000		Asia - 450
  • 1000:$0.4275
  • 2000:$0.4099
  • 3000:$0.4044
  • 5000:$0.3886
  • 10000:$0.3836
  • 25000:$0.3741
  • 50000:$0.3649
IRL2203NPBF
DISTI # IRL2203NPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 116A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL2203NPBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 335
  • 1:$0.9549
  • 10:$0.8809
  • 25:$0.8779
  • 50:$0.8759
  • 100:$0.7249
  • 500:$0.5659
  • 1000:$0.5089
IRL2203NPBF
DISTI # SP001573688		Infineon Technologies AGTrans MOSFET N-CH 30V 116A 3-Pin(3+Tab) TO-220AB (Alt: SP001573688)
RoHS: Compliant
Min Qty: 1		Europe - 1900
  • 1:€1.2339
  • 10:€0.9699
  • 25:€0.9229
  • 50:€0.9209
  • 100:€0.8029
  • 500:€0.7099
  • 1000:€0.5599
IRL2203NPBF
DISTI # 63J7734		Infineon Technologies AGN CHANNEL MOSFET, 30V, 116A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:116A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.007ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,MSL:- RoHS Compliant: Yes95
  • 1:$1.4400
  • 10:$1.2300
  • 100:$0.9390
  • 500:$0.8300
  • 1000:$0.6550
  • 2500:$0.5810
  • 10000:$0.5590
IRL2203NPBF
DISTI # 70018523		Infineon Technologies AGIRL2203NPBF N-channel MOSFET Transistor,116 A,30 V,3-Pin TO-220AB
RoHS: Compliant		0
  • 750:$1.8770
IRL2203NPBFInfineon Technologies AGSingle N-Channel 30 V 7 mOhm 60 nC HEXFET Power Mosfet - TO-220-3
RoHS: Compliant		600Tube
  • 25:$0.7400
  • 250:$0.5200
  • 1000:$0.4750
  • 2000:$0.4550
IRL2203NPBFInternational Rectifier 
RoHS: Not Compliant		590
  • 1000:$0.5800
  • 500:$0.6100
  • 100:$0.6300
  • 25:$0.6600
  • 1:$0.7100
IRL2203NPBF
DISTI # 942-IRL2203NPBF		Infineon Technologies AGMOSFET MOSFT 30V 100A 7mOhm 40nC Log LvlAB
RoHS: Compliant		1065
  • 1:$1.4400
  • 10:$1.2300
  • 100:$0.9390
  • 500:$0.8300
  • 1000:$0.6550
  • 2500:$0.5810
  • 10000:$0.5590
IRL2203NPBF
DISTI # 5409985		Infineon Technologies AGMOSFET N-CHANNEL 30V 116A TO220AB, EA200
  • 1:£2.0000
  • 10:£0.7200
  • 25:£0.7100
IRL2203NPBF
DISTI # 5409985P		Infineon Technologies AGMOSFET N-CHANNEL 30V 116A TO220AB, TU1800
  • 10:£0.7200
  • 25:£0.7100
IRL2203NPBFInternational RectifierMOSFET Transistor, N-Channel, TO-220AB200
  • 131:$1.0395
  • 50:$1.1550
  • 1:$2.3100
IRL2203NPBF
DISTI # IRL2203NPBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,100A,130W,TO220AB1669
  • 1:$1.1900
  • 3:$1.1000
  • 10:$0.8900
  • 50:$0.8100
IRL2203NPBF
DISTI # TMOSP12538		Infineon Technologies AGN-CH 30V 116A 7mOhm TO220-3
RoHS: Compliant		Stock DE - 1500Stock US - 0
  • 50:$0.9177
  • 150:$0.8653
  • 300:$0.8128
  • 600:$0.7342
  • 1000:$0.7079
IRL2203NPBF
DISTI # IRL2203NPBF		Infineon Technologies AGN-LogL 30V 75A 180W 0,007R TO220AB
RoHS: Compliant		1010
  • 10:€0.8480
  • 50:€0.6080
  • 200:€0.5480
  • 500:€0.5276
IRL2203NPBF
DISTI # 8650896		Infineon Technologies AGMOSFET, N, 30V, 100A, TO-220
RoHS: Compliant		1092
  • 5:£0.7340
  • 25:£0.7240
  • 100:£0.7090
  • 250:£0.6930
  • 500:£0.6410
IRL2203NPBF
DISTI # XSLY00000001130		INFINEON/IRTO-220AB
RoHS: Compliant		17460
  • 1350:$0.5214
  • 17460:$0.4867
IRL2203NPBF
DISTI # XSFP00000020523		Infineon Technologies AGInsulated Gate Bipolar Transistor, 117AI(C),1200VV(BR)CES, N-Channel, TO-247AC
RoHS: Compliant		22748
  • 150:$1.4800
  • 22748:$1.3500
IRL2203NPBF
DISTI # 2565899		International RectifierN CHANNEL MOSFET, 30V, 116A, TO-220AB
RoHS: Compliant		95
  • 1:$2.2800
  • 10:$1.9500
  • 100:$1.5000
  • 500:$1.3200
  • 1000:$1.0400
  • 2500:$0.9200
  • 10000:$0.9040
IRL2203NPBF
DISTI # 8650896		Infineon Technologies AGMOSFET, N, 30V, 100A, TO-220
RoHS: Compliant		1101
  • 1:$2.0000
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Disponibilidad
Valores:
Available
En orden:
1991
Ingrese la cantidad:
El precio actual de IRL2203NPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,43 US$
1,43 US$
10
1,22 US$
12,20 US$
100
0,94 US$
93,90 US$
500
0,83 US$
415,00 US$
1000
0,66 US$
655,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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