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BSB015N04NX3 G

BSB015N04NX3 G
Mfr. #:
BSB015N04NX3 G
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSB015N04NX3 G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
WDSON-2-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Id - Corriente de drenaje continua:
35 A
Rds On - Resistencia de la fuente de drenaje:
1.5 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.8 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
0.7 mm
Longitud:
6.35 mm
Serie:
OptiMOS 3
Tipo de transistor:
1 N-Channel
Ancho:
5.05 mm
Marca:
Infineon Technologies
Otoño:
7.6 ns
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Hora de levantarse:
6.4 ns
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
36 ns
Tiempo típico de retardo de encendido:
23 ns
Parte # Alias:
BSB015N04NX3GXUMA1 BSB15N4NX3GXT SP000597852
Tags
BSB015N, BSB015, BSB01, BSB0, BSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
BSB015N04NX3GXUMA1
DISTI # V72:2272_06378249		Infineon Technologies AGTrans MOSFET N-CH 40V 35A 7-Pin WDSON T/R
RoHS: Compliant		3034
  • 3000:$1.4150
  • 1000:$1.4290
  • 500:$1.5120
  • 250:$1.6470
  • 100:$1.8900
  • 25:$2.3260
  • 10:$2.5460
  • 1:$2.8300
BSB015N04NX3GXUMA1
DISTI # BSB015N04NX3GXUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 180A 2WDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.5291
BSB015N04NX3GXUMA1
DISTI # BSB015N04NX3GXUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 180A 2WDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.7226
  • 500:$2.0425
  • 100:$2.5224
  • 10:$3.0760
  • 1:$3.4500
BSB015N04NX3GXUMA1
DISTI # BSB015N04NX3GXUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 180A 2WDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.7226
  • 500:$2.0425
  • 100:$2.5224
  • 10:$3.0760
  • 1:$3.4500
BSB015N04NX3GXUMA1
DISTI # 30729203		Infineon Technologies AGTrans MOSFET N-CH 40V 35A 7-Pin WDSON T/R
RoHS: Compliant		3034
  • 3000:$1.4150
  • 1000:$1.4290
  • 500:$1.5120
  • 250:$1.6470
  • 100:$1.8900
  • 25:$2.3260
  • 10:$2.5460
  • 5:$2.8300
BSB015N04NX3GXUMA1
DISTI # BSB015N04NX3GXUMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 35A 5-Pin WDSON-2 T/R - Tape and Reel (Alt: BSB015N04NX3GXUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.4900
  • 10000:$1.4900
  • 20000:$1.3900
  • 30000:$1.3900
  • 50000:$1.2900
BSB015N04NX3GXUMA1
DISTI # 34AC1373		Infineon Technologies AGMOSFET, N-CH, 40V, 180A, WDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes8825
  • 1:$3.4700
  • 10:$3.0600
  • 25:$2.7600
  • 50:$2.4600
  • 100:$2.1500
  • 250:$1.8400
  • 500:$1.6800
  • 1000:$1.5900
BSB015N04NX3GXUMA1Infineon Technologies AGPower Field-Effect Transistor, 35A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		95
  • 1000:$1.3200
  • 500:$1.3900
  • 100:$1.4400
  • 25:$1.5000
  • 1:$1.6200
BSB015N04NX3 G
DISTI # 726-BS726-B015N04NX3		Infineon Technologies AGMOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3
RoHS: Compliant		0
  • 1:$2.8800
  • 10:$2.4500
  • 100:$2.1200
  • 250:$2.0100
  • 500:$1.8100
  • 1000:$1.5300
  • 2500:$1.4500
  • 5000:$1.3900
BSB015N04NX3GXUMA1
DISTI # 2781050		Infineon Technologies AGMOSFET, N-CH, 40V, 180A, WDSON
RoHS: Compliant		8825
  • 1:$3.2200
  • 10:$3.0100
  • 100:$2.6600
  • 250:$2.5200
  • 500:$2.3900
  • 1000:$2.2700
BSB015N04NX3GXUMA1
DISTI # C1S322000618394		Infineon Technologies AGMOSFETs
RoHS: Compliant		3034
  • 250:$1.6470
  • 100:$1.8900
  • 25:$2.3260
  • 10:$2.5460
  • 1:$2.8300
BSB015N04NX3GXUMA1
DISTI # 2781050		Infineon Technologies AGMOSFET, N-CH, 40V, 180A, WDSON
RoHS: Compliant		8825
  • 1:£3.7900
  • 10:£3.0100
  • 100:£2.4600
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OMO.#: OMO-108-0904-001-BEL

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Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de BSB015N04NX3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,87 US$
2,87 US$
10
2,44 US$
24,40 US$
100
2,11 US$
211,00 US$
250
2,01 US$
502,50 US$
500
1,80 US$
900,00 US$
1000
1,52 US$
1 520,00 US$
2500
1,44 US$
3 600,00 US$
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