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AUIRFR2905ZTRL

AUIRFR2905ZTRL
Mfr. #:
AUIRFR2905ZTRL
Fabricante:
Infineon Technologies
Descripción:
MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AUIRFR2905ZTRL Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
55 V
Id - Corriente de drenaje continua:
59 A
Rds On - Resistencia de la fuente de drenaje:
14.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
29 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
110 W
Configuración:
Único
Calificación:
AEC-Q101
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
20 S
Otoño:
35 ns
Tipo de producto:
MOSFET
Hora de levantarse:
66 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SP001520228
Unidad de peso:
0.139332 oz
Tags
AUIRFR2905ZT, AUIRFR2905Z, AUIRFR29, AUIRFR2, AUIRFR, AUIRF, AUIR, AUI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 55 V 14.5 mOhm 44 nC Automotive HEXFET® Power Mosfet - TO-252-3
***ark
Mosfet, N-Ch, 55V, 59A, To-252 Rohs Compliant: Yes |Infineon AUIRFR2905ZTRL
***Yang
Trans MOSFET N-CH 55V 59A 3-Pin(2+Tab) DPAK T/R 3k - Tape and Reel
*** Electronic Components
MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms
***ment14 APAC
MOSFET, N-CH, 55V, 59A, TO-252;
***ure Electronics
Single N-Channel 55 V 14.5 mOhm 29 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***(Formerly Allied Electronics)
MOSFET, 55V, 59A, 14.5 MOHM, 29 NC QG, D-PAK | Infineon IRFR2905ZTRLPBF
*** Stop Electro
Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:42A; On Resistance Rds(On):0.0111Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 59 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 14.5 / Gate-Source Voltage V = 20 / Fall Time ns = 35 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 31 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110
***(Formerly Allied Electronics)
MOSFET, 55V, 60A, 13.5 MOHM, 23 NC QG, LOGIC LEVEL, D-PAK | Infineon IRLR2905ZTRLPBF
***ure Electronics
Single N-Channel 55 V 13.5 mOhm 23 nC HEXFET® Power Mosfet - DPAK
*** Electronics
In a Tube of 75, N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK Infineon IRLR2905ZPBF
*** Source Electronics
Trans MOSFET N-CH Si 55V 60A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 55V 42A DPAK
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***nell
MOSFET, IPS, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation
***roFlash
Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature; Logic Level | Target Applications: AC-DC
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 42 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 13.5 / Gate-Source Voltage V = 16 / Fall Time ns = 33 / Rise Time ns = 130 / Turn-OFF Delay Time ns = 24 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = Surface Mount / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 110
***ical
Trans MOSFET N-CH 60V 9.9A Automotive 3-Pin(2+Tab) TO-252AA T/R
***emi
N-Channel PowerTrench® MOSFET 60V, 50A, 13mΩ
***ure Electronics
N-Channel 60 V 50 A 13 mOhm PowerTrench® Mosfet - DPAK
***r Electronics
Power Field-Effect Transistor, 9.9A I(D), 60V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***emi
N-Channel PowerTrench® MOSFET, 60V, 50A, 13.5mΩ
***ical
Trans MOSFET N-CH 60V 9.9A Automotive 3-Pin(2+Tab) TO-252AA T/R
***icontronic
Power Field-Effect Transistor, 9.9A I(D), 60V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
*** Source Electronics
Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 50A D-PAK
***emi
N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ
***ure Electronics
N-Channel 60 V 10.5 mOhm Surface Mount PowerTrench Mosfet TO-252AA
***r Electronics
Power Field-Effect Transistor, 11A I(D), 60V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***el Electronic
Resistor Networks, Arrays 200 ppm/°C 0804, Convex, Long Side Terminals 8 4 0Ohm 8 Jumper Tape & Reel (TR) Surface Mount RES ARRAY 4 RES ZERO OHM 0804
***ment14 APAC
MOSFET, N CH, 60V, 50A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):9.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:135W; Transistor Case Style:TO-252AA; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Package / Case:TO-252AA; Power Dissipation Pd:135W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descripción Valores Precio
AUIRFR2905ZTRL
DISTI # AUIRFR2905ZTRL-ND		Infineon Technologies AGMOSFET N-CH 55V 42A DPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.8059
AUIRFR2905ZTRL
DISTI # AUIRFR2905ZTRL		Infineon Technologies AGTrans MOSFET N-CH 55V 59A 3-Pin(2+Tab) DPAK T/R 3k (Alt: AUIRFR2905ZTRL)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 3000
  • 150000:$0.7865
  • 75000:$0.7981
  • 30000:$0.8100
  • 15000:$0.8223
  • 9000:$0.8480
  • 6000:$0.8753
  • 3000:$0.9045
AUIRFR2905ZTRL
DISTI # AUIRFR2905ZTRL		Infineon Technologies AGTrans MOSFET N-CH 55V 59A 3-Pin(2+Tab) DPAK T/R 3k - Tape and Reel (Alt: AUIRFR2905ZTRL)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.6889
  • 18000:$0.7019
  • 12000:$0.7259
  • 6000:$0.7529
  • 3000:$0.7809
AUIRFR2905ZTRL
DISTI # AUIRFR2905ZTRL		Infineon Technologies AGTrans MOSFET N-CH 55V 59A 3-Pin(2+Tab) DPAK T/R 3k - Bulk (Alt: AUIRFR2905ZTRL)
Min Qty: 491
Container: Bulk		Americas - 0
  • 4910:$0.6479
  • 2455:$0.6609
  • 1473:$0.6869
  • 982:$0.7139
  • 491:$0.7439
AUIRFR2905ZTRL
DISTI # SP001520228		Infineon Technologies AGTrans MOSFET N-CH 55V 59A 3-Pin(2+Tab) DPAK T/R 3k (Alt: SP001520228)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.6499
  • 18000:€0.6999
  • 12000:€0.7589
  • 6000:€0.8279
  • 3000:€1.0119
AUIRFR2905ZTRL
DISTI # 942-AUIRFR2905ZTRL		Infineon Technologies AGMOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms
RoHS: Compliant		3000
  • 1:$1.6000
  • 10:$1.3600
  • 100:$1.0900
  • 500:$0.9500
  • 1000:$0.7870
  • 3000:$0.7330
  • 6000:$0.7060
  • 9000:$0.6790
AUIRFR2905ZTRLInternational Rectifier 
RoHS: Not Compliant		7174
  • 1000:$0.6700
  • 500:$0.7100
  • 100:$0.7400
  • 25:$0.7700
  • 1:$0.8300
Imagen Parte # Descripción
AUIRFR2905ZTRL

Mfr.#: AUIRFR2905ZTRL

OMO.#: OMO-AUIRFR2905ZTRL

 MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms
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Mfr.#: AUIRFR2407TRR

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Mfr.#: AUIRFR2405

OMO.#: OMO-AUIRFR2405-INFINEON-TECHNOLOGIES

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AUIRFR2307ZTRR

Mfr.#: AUIRFR2307ZTRR

OMO.#: OMO-AUIRFR2307ZTRR-INFINEON-TECHNOLOGIES

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AUIRFR2407

Mfr.#: AUIRFR2407

OMO.#: OMO-AUIRFR2407-INFINEON-TECHNOLOGIES

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Mfr.#: AUIRFR2607Z

OMO.#: OMO-AUIRFR2607Z-INFINEON-TECHNOLOGIES

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AUIRFR2407TR

Mfr.#: AUIRFR2407TR

OMO.#: OMO-AUIRFR2407TR-INFINEON-TECHNOLOGIES

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AUIRFR2905Z

Mfr.#: AUIRFR2905Z

OMO.#: OMO-AUIRFR2905Z-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET AUTO 55V 1 N-CH HEXFET 14.5mOhms
AUIRFR2307ZTRPBF

Mfr.#: AUIRFR2307ZTRPBF

OMO.#: OMO-AUIRFR2307ZTRPBF-1190

 Nuevo y original
AUIRFR2407TRPBF

Mfr.#: AUIRFR2407TRPBF

OMO.#: OMO-AUIRFR2407TRPBF-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1986
Ingrese la cantidad:
El precio actual de AUIRFR2905ZTRL es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,74 US$
1,74 US$
10
1,48 US$
14,80 US$
100
1,18 US$
118,00 US$
500
1,03 US$
515,00 US$
1000
0,86 US$
860,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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