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FDPF2710T

FDPF2710T
Mfr. #:
FDPF2710T
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 250V N-Channel PowerTrench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDPF2710T Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDPF2710T más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220FP-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
250 V
Id - Corriente de drenaje continua:
25 A
Rds On - Resistencia de la fuente de drenaje:
42.5 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
62.5 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
PowerTrench
Embalaje:
Tubo
Altura:
16.07 mm
Longitud:
10.36 mm
Serie:
FDPF2710T
Tipo de transistor:
1 N-Channel
Ancho:
4.9 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
154 ns
Tipo de producto:
MOSFET
Hora de levantarse:
252 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
112 ns
Tiempo típico de retardo de encendido:
80 ns
Unidad de peso:
0.080072 oz
Tags
FDPF2, FDPF, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel PowerTrench® MOSFET 250V, 25A, 42.5mΩ
***Yang
Trans MOSFET N-CH 250V 25A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 25A I(D), 250V, 0.0425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N CH, 250V, 25A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.0363ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.9V; Power Dissipation Pd:62.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***ernational Rectifier
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB Full-Pak package
***p One Stop
Trans MOSFET N-CH 250V 19A 3-Pin(3+Tab) TO-220AB Full-Pak Tube
***(Formerly Allied Electronics)
MOSFET, 250V, 19A, 46 MOHM, 73 NC QG, TO-220 FULLPACK
***ark
Channel Type:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:19A; Transistor Mounting:through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:46W; No. Of Pins:3Pins Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Fast Switching; Very Low Gate Charge; Repetitive Avalanche Capability for Robustness and Reliability; Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications | Target Applications: Battery Operated Drive; Class D Audio
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB FullPak package
***et
Trans MOSFET N-CH 200V 26A 3-Pin(3+Tab) TO-220AB Full-Pak
***(Formerly Allied Electronics)
MOSFET, 200V, 26A, 22 MOHM, 73 NC QG, TO-220 FULLPACK
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:26A; On Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-TO-220AB ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Fast Switching; Very Low Gate Charge; Repetitive Avalanche Capability for Robustness and Reliability; Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications | Target Applications: Battery Operated Drive; Class D Audio
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 26 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 21 / Gate-Source Voltage V = 30 / Fall Time ns = 29 / Rise Time ns = 19 / Turn-OFF Delay Time ns = 11 / Turn-ON Delay Time ns = 17 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 46
***ark
Transistor,mosfet,n-Channel,200V V(Br)Dss,28A I(D),to-220Ab(Fp) Rohs Compliant: Yes
***emi
Power MOSFET, N-Channel, QFET®, 200 V, 28 A, 82 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 200V 28A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 28A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***i-Key
MOSFET N-CH 200V 17.5A TO-220F
***o-Tech
Mosfet (PACKAGE TO220F)
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***ser
MOSFETs 200V N-Channel QFET
***ark
MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:17.5A; Resistance, Rds On:0.075ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; ;RoHS Compliant: Yes
***emi
N-Channel Power MOSFET, UniFETTM, FRFET®, 200 V, 18 A, 140 mΩ, TO-220F
***ure Electronics
FDPF18N20FT Series 200 V 18 A 140 mOhm N-Channel UniFetTMFRFET Mosfet - TO-220F
***Yang
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube
*** Source Electronics
N-Channel MOSFET 200V, 18A, 0.14Ω | MOSFET N-CH 200V 18A TO-220F-3
***r Electronics
Power Field-Effect Transistor, 18A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 200 V, 19 A, 170 mΩ, TO-220F
***ark
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,19A I(D),TO-220AB(FP)
***Yang
Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***ure Electronics
FQPF19 Series 200 V 0.17 Ohm N-Channel Enhancement Mode MOSFET - TO-220F
*** Stop Electro
Power Field-Effect Transistor, 19A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDPF2710T
DISTI # 32139802		ON Semiconductor250V, 25A, NCH, POWER TRENCH M1000
  • 1000:$2.2068
FDPF2710T
DISTI # FDPF2710T-ND		ON SemiconductorMOSFET N-CH 250V 25A TO-220F
RoHS: Compliant
Min Qty: 1
Container: Tube		2346In Stock
  • 3000:$2.3098
  • 1000:$2.4314
  • 100:$3.3866
  • 25:$3.9076
  • 10:$4.1330
  • 1:$4.6000
FDPF2710T
DISTI # V36:1790_06359901		ON Semiconductor250V, 25A, NCH, POWER TRENCH M0
  • 1000000:$1.9270
  • 500000:$1.9300
  • 100000:$2.3570
  • 10000:$3.1790
  • 1000:$3.3200
FDPF2710T
DISTI # V99:2348_06359901		ON Semiconductor250V, 25A, NCH, POWER TRENCH M0
    FDPF2710T
    DISTI # FDPF2710T    		ON SemiconductorTrans MOSFET N-CH 250V 25A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FDPF2710T)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 10000:$2.0420
    • 6000:$2.0937
    • 4000:$2.1205
    • 2000:$2.1481
    • 1000:$2.1621
    FDPF2710T
    DISTI # FDPF2710T    		ON SemiconductorTrans MOSFET N-CH 250V 25A 3-Pin(3+Tab) TO-220F Rail - Bulk (Alt: FDPF2710T)
    RoHS: Compliant
    Min Qty: 136
    Container: Bulk    		Americas - 0
    • 1360:$2.1900
    • 272:$2.2900
    • 408:$2.2900
    • 680:$2.2900
    • 136:$2.3900
    FDPF2710T
    DISTI # FDPF2710T    		ON SemiconductorTrans MOSFET N-CH 250V 25A 3-Pin(3+Tab) TO-220F Rail (Alt: FDPF2710T)
    RoHS: Compliant
    Min Qty: 1000    		Asia - 0
    • 50000:$2.7115
    • 25000:$2.7567
    • 10000:$2.8517
    • 5000:$2.9536
    • 3000:$3.0630
    • 2000:$3.1808
    • 1000:$3.3080
    FDPF2710T
    DISTI # FDPF2710T    		ON SemiconductorTrans MOSFET N-CH 250V 25A 3-Pin(3+Tab) TO-220F Rail (Alt: FDPF2710T)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 500:€1.9900
    • 1000:€1.9900
    • 50:€2.0900
    • 100:€2.0900
    • 25:€2.1900
    • 10:€2.2900
    • 1:€2.3900
    FDPF2710T
    DISTI # 78M0952    		ON SemiconductorMOSFET, N CHANNEL, 250V, 0.0363OHM, 25A, TO-220F-3,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.0363ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:3Pins RoHS Compliant: Yes0
    • 500:$2.9200
    • 250:$3.2400
    • 100:$3.4000
    • 50:$3.5700
    • 25:$3.7300
    • 10:$3.9000
    • 1:$4.5500
    FDPF2710T
    DISTI # 512-FDPF2710T    		ON SemiconductorMOSFET 250V N-Channel PowerTrench
    RoHS: Compliant    		420
    • 1:$4.3800
    • 10:$3.7300
    • 100:$3.2300
    • 250:$3.0700
    • 500:$2.7500
    FDPF2710TON SemiconductorPower Field-Effect Transistor, 25A I(D), 250V, 0.0425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		6000
    • 1000:$2.4200
    • 500:$2.5500
    • 100:$2.6500
    • 25:$2.7700
    • 1:$2.9800
    FDPF2710TFairchild Semiconductor CorporationPower Field-Effect Transistor, 25A I(D), 250V, 0.0425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		353
    • 1000:$2.4200
    • 500:$2.5500
    • 100:$2.6500
    • 25:$2.7700
    • 1:$2.9800
    FDPF2710T
    DISTI # 8648590P    		ON SemiconductorMOSFET N-CH 250V 25A POWERTRENCH TO220F, TU766
    • 20:£1.5550
    FDPF2710T
    DISTI # 2322604    		ON SemiconductorMOSFET, N CH, 250V, 25A, TO-220F-3
    RoHS: Compliant    		0
    • 500:£2.1200
    • 250:£2.3600
    • 100:£2.4800
    • 10:£2.8800
    • 1:£3.7800
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    Mfr.#: BSS138LT1G

    OMO.#: OMO-BSS138LT1G

    		 MOSFET 50V 200mA N-Channel
    FFSH3065A

    Mfr.#: FFSH3065A

    OMO.#: OMO-FFSH3065A

    		 Schottky Diodes & Rectifiers 650V 30A SIC SBD
    B58031I9254M062

    Mfr.#: B58031I9254M062

    OMO.#: OMO-B58031I9254M062-EPCOS

    		 CAP CER 0.25UF 900V SMD
    LM321SN3T1G

    Mfr.#: LM321SN3T1G

    OMO.#: OMO-LM321SN3T1G-ON-SEMICONDUCTOR

    		 Operational Amplifiers - Op Amps SINGLE VERSION OF LM358
    ST25R3911B-AQFT

    Mfr.#: ST25R3911B-AQFT

    OMO.#: OMO-ST25R3911B-AQFT-STMICROELECTRONICS

    		 IC RFID READER 13.56MHZ 32QFN
    MUSBRM5C130

    Mfr.#: MUSBRM5C130

    OMO.#: OMO-MUSBRM5C130-AMPHENOL-ICC

    		 CONN RCPT TYPEC 24POS PCB
    BSS138LT1G

    Mfr.#: BSS138LT1G

    OMO.#: OMO-BSS138LT1G-ON-SEMICONDUCTOR

    		 MOSFET N-CH 50V 200MA SOT-23
    FFSH3065A

    Mfr.#: FFSH3065A

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    		 650V 30A SIC SBD
    Disponibilidad
    Valores:
    420
    En orden:
    2403
    Ingrese la cantidad:
    El precio actual de FDPF2710T es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    4,38 US$
    4,38 US$
    10
    3,73 US$
    37,30 US$
    100
    3,23 US$
    323,00 US$
    250
    3,07 US$
    767,50 US$
    500
    2,75 US$
    1 375,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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