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FQP19N10

FQP19N10
Mfr. #:
FQP19N10
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 100V N-Channel QFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQP19N10 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
19 A
Rds On - Resistencia de la fuente de drenaje:
100 mOhms
Vgs - Voltaje puerta-fuente:
25 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
75 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
12 S
Otoño:
65 ns
Tipo de producto:
MOSFET
Hora de levantarse:
150 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
20 ns
Tiempo típico de retardo de encendido:
7.5 ns
Parte # Alias:
FQP19N10_NL
Unidad de peso:
0.050717 oz
Tags
FQP19N1, FQP19, FQP1, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 19A 3-Pin (3+Tab) TO-220 Rail
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:19A; Resistance, Rds On:0.1ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination Type:Through Hole; Alternate Case Style:SOT-78B; Current, Idm Pulse:76A; No. of Pins:3; Pin Configuration:G(1),D(2)S(3); Power Dissipation:75W; Power, Pd:75W; Resistance, Rds on Max:0.1ohm; Resistance, Rds on Typ.:0.078ohm; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:2°C/W; Typ Capacitance Ciss:600pF; Voltage, Rds Measurement:10V; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
Parte # Mfg. Descripción Valores Precio
FQP19N10
DISTI # FQP19N10-ND		ON SemiconductorMOSFET N-CH 100V 19A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    FQP19N10L
    DISTI # FQP19N10L-ND    		ON SemiconductorMOSFET N-CH 100V 19A TO-220
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Limited Supply - Call
      FQP19N10L
      DISTI # FQP19N10L      		ON SemiconductorTrans MOSFET N-CH 100V 19A 3-Pin(3+Tab) TO-220 Rail - Bulk (Alt: FQP19N10L)
      RoHS: Compliant
      Min Qty: 893
      Container: Bulk      		Americas - 0
      • 8930:$0.3449
      • 4465:$0.3539
      • 2679:$0.3579
      • 1786:$0.3629
      • 893:$0.3659
      FQP19N10
      DISTI # 512-FQP19N10      		ON SemiconductorMOSFET 100V N-Channel QFET
      RoHS: Compliant      		0
        FQP19N10L
        DISTI # 512-FQP19N10L        		ON SemiconductorMOSFET 100V N-Ch QFET Logic Level
        RoHS: Compliant        		0
          FQP19N10LFairchild Semiconductor CorporationPower Field-Effect Transistor, 19A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
          RoHS: Compliant          		2071
          • 1000:$0.3700
          • 500:$0.3900
          • 100:$0.4000
          • 25:$0.4200
          • 1:$0.4500
          FQP19N10Fairchild Semiconductor CorporationPower Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
          RoHS: Compliant          		15
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            OMO.#: OMO-FQP13N10--1190

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            Disponibilidad
            Valores:
            Available
            En orden:
            3000
            Ingrese la cantidad:
            El precio actual de FQP19N10 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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