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FQD2N60CTM_WS

FQD2N60CTM_WS
Mfr. #:
FQD2N60CTM_WS
Fabricante:
Fairchild Semiconductor
Descripción:
IGBT Transistors MOSFET 600V 1.9A NCH MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQD2N60CTM_WS Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
1.9 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Resistencia a la fuente de desagüe de Rds
4.7 Ohms
Polaridad del transistor
Canal N
Tags
FQD2N60CTM, FQD2N60CT, FQD2N60C, FQD2N60, FQD2N6, FQD2N, FQD2, FQD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK
***r Electronics
Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***i-Key
MOSFET N-CH 600V 2.4A DPAK
***nsix Microsemi
Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ser
MOSFETs 600V N-Channel QFET
***el Nordic
Contact for details
***inecomponents.com
Trans MOSFET N-CH 600V 2A 3-Pin (2+Tab) TO-252 T/R
***i-Key
MOSFET N-CH 600V 2A DPAK
***ser
MOSFETs & MOSFETs RF .
*** Source Electronics
MOSFET N-CH 600V 1.7A TO252-3 / Trans MOSFET N-CH 650V 1.7A Automotive 3-Pin(2+Tab) DPAK T/R
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***nell
MOSFET, N CH, 650V, 1.7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 2.97ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ineon SCT
Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS
***ark
Mosfet, N-Ch, 600V, 3.7A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***ical
Trans MOSFET N-CH 650V 2.4A 3-Pin(2+Tab) TO-252 T/R
*** Stop Electro
Power Field-Effect Transistor, 2.4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***nell
MOSFET, N-CH, 600V, 2.4A, TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***i-Key
MOSFET N-CH 500V 1.6A DPAK
***ser
MOSFETs 500V N-Channel QFET
***ark
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:1.6A; On-Resistance, Rds(on):5.3ohm; Package/Case:2-TO-252; Leaded Process Compatible:No; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):No RoHS Compliant: No
Parte # Mfg. Descripción Valores Precio
FQD2N60CTM-WS
DISTI # FQD2N60CTM-WSCT-ND		ON SemiconductorMOSFET N-CH 600V 1.9A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    FQD2N60CTM-WS
    DISTI # FQD2N60CTM-WSDKR-ND    		ON SemiconductorMOSFET N-CH 600V 1.9A
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      FQD2N60CTM-WS
      DISTI # FQD2N60CTM-WSTR-ND      		ON SemiconductorMOSFET N-CH 600V 1.9A
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 2500:$0.4304
      FQD2N60CTM_WS
      DISTI # FQD2N60CTM-WS      		ON SemiconductorMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: FQD2N60CTM-WS)
      RoHS: Compliant
      Min Qty: 2500
      Container: Reel      		Americas - 0
      • 2500:$0.3469
      • 5000:$0.3449
      • 10000:$0.3399
      • 15000:$0.3359
      • 25000:$0.3279
      FQD2N60CTM_WS
      DISTI # FQD2N60CTM-WS      		ON SemiconductorMOS Power Transistors HV (>= 200V) (Alt: FQD2N60CTM-WS)
      RoHS: Compliant
      Min Qty: 2500      		Europe - 0
      • 2500:€0.6399
      • 5000:€0.4979
      • 10000:€0.4129
      • 15000:€0.3479
      • 25000:€0.3229
      FQD2N60CTM-WS
      DISTI # 48AC1176      		ON SemiconductorQFC 600V 4.7OHM DPAK / REEL0
      • 1:$0.5590
      FQD2N60CTM-WS
      DISTI # 512-FQD2N60CTM_WS      		ON SemiconductorMOSFET 600V 1.9A NCH MOSFET
      RoHS: Compliant      		2747
      • 1:$0.9200
      • 10:$0.7830
      • 100:$0.6010
      • 500:$0.5320
      • 1000:$0.4200
      • 2500:$0.3720
      • 10000:$0.3580
      FQD2N60CTM_WS
      DISTI # XSKDRABV0044784      		ON SEMICONDUCTOR 
      RoHS: Compliant      		7500 in Stock0 on Order
      • 7500:$0.4573
      • 2500:$0.4900
      Imagen Parte # Descripción
      FQD2N60CTM-WS

      Mfr.#: FQD2N60CTM-WS

      OMO.#: OMO-FQD2N60CTM-WS

      		 MOSFET 600V 1.9A NCH MOSFET
      FQD2N60CTM

      Mfr.#: FQD2N60CTM

      OMO.#: OMO-FQD2N60CTM

      		 MOSFET N-CH/600V/2A/A.QFET
      FQD2N60A

      Mfr.#: FQD2N60A

      OMO.#: OMO-FQD2N60A-1190

      		 Nuevo y original
      FQD2N60C

      Mfr.#: FQD2N60C

      OMO.#: OMO-FQD2N60C-1190

      		 Nuevo y original
      FQD2N60C FQD2N60 2N60D

      Mfr.#: FQD2N60C FQD2N60 2N60D

      OMO.#: OMO-FQD2N60C-FQD2N60-2N60D-1190

      		 Nuevo y original
      FQD2N60C TM-(FAIRCHILD)

      Mfr.#: FQD2N60C TM-(FAIRCHILD)

      OMO.#: OMO-FQD2N60C-TM--FAIRCHILD--1190

      		 Nuevo y original
      FQD2N60CTF_F080

      Mfr.#: FQD2N60CTF_F080

      OMO.#: OMO-FQD2N60CTF-F080-ON-SEMICONDUCTOR

      		 MOSFET N-CH 600V 1.9A DPAK
      FQD2N60CTM-NL

      Mfr.#: FQD2N60CTM-NL

      OMO.#: OMO-FQD2N60CTM-NL-1190

      		 Nuevo y original
      FQD2N60CTM/FQD5N60C

      Mfr.#: FQD2N60CTM/FQD5N60C

      OMO.#: OMO-FQD2N60CTM-FQD5N60C-1190

      		 Nuevo y original
      FQD2N60TM

      Mfr.#: FQD2N60TM

      OMO.#: OMO-FQD2N60TM-ON-SEMICONDUCTOR

      		 MOSFET N-CH 600V 2A DPAK
      Disponibilidad
      Valores:
      Available
      En orden:
      4500
      Ingrese la cantidad:
      El precio actual de FQD2N60CTM_WS es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,43 US$
      0,43 US$
      10
      0,40 US$
      4,05 US$
      100
      0,38 US$
      38,33 US$
      500
      0,36 US$
      181,00 US$
      1000
      0,34 US$
      340,70 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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