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SI1025X-T1-GE3

SI1025X-T1-GE3
Mfr. #:
SI1025X-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET 2P-CH 60V 0.19A SC-89
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI1025X-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET: matrices
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI1025X-GE3
Unidad de peso
0.001129 oz
Estilo de montaje
SMD / SMT
Nombre comercial
TrenchFET
Paquete-Estuche
SOT-563, SOT-666
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
SC-89-6
Configuración
Doble
Tipo FET
2 P-Channel (Dual)
Potencia máxima
250mW
Tipo transistor
2 P-Channel
Drenaje-a-fuente-voltaje-Vdss
60V
Entrada-Capacitancia-Ciss-Vds
23pF @ 25V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
190mA
Rds-On-Max-Id-Vgs
4 Ohm @ 500mA, 10V
Vgs-th-Max-Id
3V @ 250μA
Puerta-Carga-Qg-Vgs
1.7nC @ 15V
Disipación de potencia Pd
250 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
190 mA
Vds-Drain-Source-Breakdown-Voltage
- 60 V
Resistencia a la fuente de desagüe de Rds
8 Ohms
Polaridad del transistor
P-Channel
Modo de canal
Mejora
Tags
SI1025X-T, SI1025X, SI1025, SI102, SI10, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
SI1025X-T1-GE3
DISTI # SI1025X-T1-GE3CT-ND		Vishay SiliconixMOSFET 2P-CH 60V 0.19A SC-89
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		17446In Stock
  • 1000:$0.2232
  • 500:$0.2855
  • 100:$0.3852
  • 10:$0.5100
  • 1:$0.6000
SI1025X-T1-GE3
DISTI # SI1025X-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2P-CH 60V 0.19A SC-89
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		17446In Stock
  • 1000:$0.2232
  • 500:$0.2855
  • 100:$0.3852
  • 10:$0.5100
  • 1:$0.6000
SI1025X-T1-GE3
DISTI # SI1025X-T1-GE3TR-ND		Vishay SiliconixMOSFET 2P-CH 60V 0.19A SC-89
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		15000In Stock
  • 3000:$0.1986
SI1025X-T1-GE3
DISTI # SI1025X-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 60V 0.19A 6-Pin SOT-563F T/R - Tape and Reel (Alt: SI1025X-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1599
  • 6000:$0.1549
  • 12000:$0.1489
  • 18000:$0.1439
  • 30000:$0.1409
SI1025X-T1-GE3
DISTI # 69W7171		Vishay IntertechnologiesTrans MOSFET P-CH 60V 0.19A 6-Pin SOT-563F T/R - Product that comes on tape, but is not reeled (Alt: 69W7171)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$0.6630
  • 25:$0.4980
  • 50:$0.4340
  • 100:$0.3690
  • 250:$0.3360
  • 500:$0.3040
  • 1000:$0.2350
SI1025X-T1-GE3
DISTI # 16P3677		Vishay IntertechnologiesP CHANNEL, MOSFET, -60V, -500mA, SC-89, FULL REEL,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-500mA,Drain Source Voltage Vds:-60V,On Resistance Rds(on):4ohm,Rds(on) Test Voltage Vgs:20V,No. of Pins:6Pins RoHS Compliant: Yes0
  • 1:$0.1840
  • 3000:$0.1840
SI1025X-T1-GE3
DISTI # 69W7171		Vishay IntertechnologiesMOSFET, P CHANNEL, -60V, -190mA, SC-89-6,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-190mA,Drain Source Voltage Vds:-60V,On Resistance Rds(on):8ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-2V RoHS Compliant: Yes2527
  • 1000:$0.2350
  • 500:$0.3040
  • 250:$0.3360
  • 100:$0.3690
  • 50:$0.4340
  • 25:$0.4980
  • 1:$0.6630
SI1025X-T1-GE3.
DISTI # 30AC0127		Vishay IntertechnologiesP CHANNEL, MOSFET, -60V, -500mA, SC-89, FULL REEL,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-500mA,Drain Source Voltage Vds:-60V,On Resistance Rds(on):4ohm,Rds(on) Test Voltage Vgs:20V,No. of Pins:6Pins RoHS Compliant: No0
  • 1:$0.1840
  • 3000:$0.1840
SI1025X-T1-GE3
DISTI # 70616133		Vishay SiliconixSI1025X-T1-GE3 Dual P-channel MOSFET Transistor,0.135 A,60 V,6-Pin SC-89
RoHS: Compliant		0
  • 300:$0.3000
  • 600:$0.2900
  • 1500:$0.2800
  • 3000:$0.2700
  • 7500:$0.2500
SI1025X-T1-GE3
DISTI # 781-SI1025X-GE3		Vishay IntertechnologiesMOSFET -60V Vds 20V Vgs SC89-6
RoHS: Compliant		5336
  • 1:$0.5200
  • 10:$0.3980
  • 100:$0.2950
  • 500:$0.2430
  • 1000:$0.1880
SI1025X-T1-GE3Vishay Siliconix 1000
    SI1025X-T1-GE3
    DISTI # 8123029P    		Vishay IntertechnologiesTRANS MOSFET P-CH 60V 0.19A 6-PIN, RL980
    • 800:£0.1760
    • 400:£0.2040
    • 200:£0.2200
    • 60:£0.2740
    SI1025XT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 0.19A I(D), 60V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		Europe - 6000
      SI1025X-T1-GE3
      DISTI # 2478943      		Vishay IntertechnologiesP CHANNEL, MOSFET, -60V, -500mA, SC-89,
      RoHS: Compliant      		0
      • 6000:$0.2530
      • 12000:$0.2530
      • 3000:$0.2910
      SI1025X-T1-GE3
      DISTI # 2335271      		Vishay IntertechnologiesMOSFET, DUAL P CH, -60V, -0.19A, SC-89
      RoHS: Compliant      		3843
      • 3000:$0.2770
      • 1000:$0.2830
      • 500:$0.3660
      • 100:$0.4450
      • 10:$0.6000
      • 1:$0.7990
      SI1025X-T1-GE3Vishay IntertechnologiesMOSFET -60V Vds 20V Vgs SC89-6
      RoHS: Compliant      		Americas - 39000
        SI1025X-T1-GE3
        DISTI # 2335271        		Vishay IntertechnologiesMOSFET, DUAL P CH, -60V, -0.19A, SC-89
        RoHS: Compliant        		3873
        • 500:£0.1800
        • 250:£0.2080
        • 100:£0.2240
        • 25:£0.2790
        • 5:£0.3140
        Imagen Parte # Descripción
        SI1025X-T1-GE3

        Mfr.#: SI1025X-T1-GE3

        OMO.#: OMO-SI1025X-T1-GE3

        		 MOSFET -60V Vds 20V Vgs SC89-6
        SI1025X-T1-E3

        Mfr.#: SI1025X-T1-E3

        OMO.#: OMO-SI1025X-T1-E3

        		 MOSFET RECOMMENDED ALT 781-SI1025X-GE3
        SI1025X

        Mfr.#: SI1025X

        OMO.#: OMO-SI1025X-1190

        		 Nuevo y original
        SI1025X-T1

        Mfr.#: SI1025X-T1

        OMO.#: OMO-SI1025X-T1-1190

        		 MOSFET -60V Vds 20V Vgs SC89-6
        SI1025X-T1-E3

        Mfr.#: SI1025X-T1-E3

        OMO.#: OMO-SI1025X-T1-E3-VISHAY

        		 MOSFET 2P-CH 60V 0.19A SOT563F
        SI1025X-T1-GE3

        Mfr.#: SI1025X-T1-GE3

        OMO.#: OMO-SI1025X-T1-GE3-VISHAY

        		 MOSFET 2P-CH 60V 0.19A SC-89
        Disponibilidad
        Valores:
        Available
        En orden:
        3000
        Ingrese la cantidad:
        El precio actual de SI1025X-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,21 US$
        0,21 US$
        10
        0,20 US$
        2,01 US$
        100
        0,19 US$
        19,02 US$
        500
        0,18 US$
        89,80 US$
        1000
        0,17 US$
        169,10 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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